DE60034623D1 - Röntgenbilddetektorsystem - Google Patents

Röntgenbilddetektorsystem

Info

Publication number
DE60034623D1
DE60034623D1 DE60034623T DE60034623T DE60034623D1 DE 60034623 D1 DE60034623 D1 DE 60034623D1 DE 60034623 T DE60034623 T DE 60034623T DE 60034623 T DE60034623 T DE 60034623T DE 60034623 D1 DE60034623 D1 DE 60034623D1
Authority
DE
Germany
Prior art keywords
ray image
image detector
detector system
ray
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60034623T
Other languages
English (en)
Other versions
DE60034623T2 (de
Inventor
Mitsushi Ikeda
Masaki Atsuta
Akira Kinno
Kouhei Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE60034623D1 publication Critical patent/DE60034623D1/de
Application granted granted Critical
Publication of DE60034623T2 publication Critical patent/DE60034623T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14659—Direct radiation imagers structures
DE60034623T 1999-03-26 2000-03-24 Röntgenbilddetektorsystem Expired - Lifetime DE60034623T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP08308899A JP3838806B2 (ja) 1999-03-26 1999-03-26 信号増倍ｘ線撮像装置
JP8308899 1999-03-26

Publications (2)

Publication Number Publication Date
DE60034623D1 true DE60034623D1 (de) 2007-06-14
DE60034623T2 DE60034623T2 (de) 2007-12-27

Family

ID=13792440

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60034623T Expired - Lifetime DE60034623T2 (de) 1999-03-26 2000-03-24 Röntgenbilddetektorsystem

Country Status (4)

Country Link
US (1) US6403965B1 (de)
EP (1) EP1043777B1 (de)
JP (1) JP3838806B2 (de)
DE (1) DE60034623T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001313384A (ja) * 2000-04-28 2001-11-09 Shimadzu Corp 放射線検出器
KR100683526B1 (ko) * 2000-12-29 2007-02-15 엘지.필립스 엘시디 주식회사 엑스-선 검출소자 및 그의 제조방법
KR100763137B1 (ko) * 2000-12-29 2007-10-02 엘지.필립스 엘시디 주식회사 엑스-선 검출소자 및 그의 제조방법
US6737653B2 (en) * 2001-03-12 2004-05-18 Lg. Philips Lcd Co., Ltd. X-ray detector and method of fabricating therefore
JP2003050280A (ja) * 2001-08-03 2003-02-21 Konica Corp 放射線画像検出器
CN1316634C (zh) * 2001-10-03 2007-05-16 株式会社东芝 X光平面检测器
FI20021255A (fi) * 2002-06-27 2003-12-28 Metorex Internat Oy Suoraan konversioon perustuva kuvaava röntgendetektori
JP4153783B2 (ja) * 2002-12-09 2008-09-24 株式会社東芝 Ｘ線平面検出器
JP4323827B2 (ja) * 2003-02-14 2009-09-02 キヤノン株式会社 固体撮像装置及び放射線撮像装置
US20040246355A1 (en) * 2003-06-06 2004-12-09 Ji Ung Lee Storage capacitor array for a solid state radiation imager
WO2005009206A2 (en) * 2003-06-25 2005-02-03 Besson Guy M Dynamic multi-spectral imaging system
JP4269859B2 (ja) * 2003-09-10 2009-05-27 株式会社島津製作所 放射線検出器
US20050056829A1 (en) * 2003-09-17 2005-03-17 Green Michael C. Reducing dark current of photoconductor using heterojunction that maintains high x-ray sensitivity
US7126128B2 (en) * 2004-02-13 2006-10-24 Kabushiki Kaisha Toshiba Flat panel x-ray detector
GB0517741D0 (en) 2005-08-31 2005-10-12 E2V Tech Uk Ltd Image sensor
US7524711B2 (en) * 2005-10-20 2009-04-28 Hannstar Display Corp. Method of manufacturing an image TFT array for an indirect X-ray sensor and structure thereof
KR101218089B1 (ko) * 2007-12-07 2013-01-18 엘지디스플레이 주식회사 디지털 엑스레이 디텍터 및 그 제조방법
JP2010011158A (ja) * 2008-06-27 2010-01-14 Fujifilm Corp 検出素子
JP2010034343A (ja) * 2008-07-30 2010-02-12 Sumitomo Chemical Co Ltd 半導体装置の製造方法および半導体装置
EP3447802B1 (de) 2009-06-17 2021-04-21 The Regents Of The University Of Michigan Photodiode und andere sensorstrukturen in flachtafel-röntgenabbildungsgeräten sowie verfahren zur verbesserung der topologischen gleichförmigkeit der photodiode und der anderen strukturen in dem flachtafel-röntgenabbildungsgerät auf dünnschichtelektronikbasis
US8878137B2 (en) 2011-10-13 2014-11-04 Varian Medical Systems, Inc. Photo detector of an X-ray imager
JP2014225527A (ja) * 2013-05-15 2014-12-04 キヤノン株式会社 検出装置、及び、検出システム
JP2015061041A (ja) * 2013-09-20 2015-03-30 株式会社東芝 放射線検出器および放射線検出装置
JP6260787B2 (ja) 2014-05-23 2018-01-17 パナソニックＩｐマネジメント株式会社 撮像装置
JP6443667B2 (ja) * 2014-05-23 2018-12-26 パナソニックＩｐマネジメント株式会社 撮像装置
CN106653789A (zh) * 2017-01-04 2017-05-10 京东方科技集团股份有限公司 X射线探测器及其制造方法
EP3422413A1 (de) * 2017-06-26 2019-01-02 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Photodetektoranordnung und verfahren zur herstellung davon sowie bildgebungsvorrichtung mit der photodetektoranordnung
CN114902081A (zh) * 2020-02-26 2022-08-12 深圳帧观德芯科技有限公司 辐射检测器
TW202228301A (zh) * 2021-01-06 2022-07-16 日商索尼半導體解決方案公司 受光元件及測距系統

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164809A (en) * 1989-04-21 1992-11-17 The Regents Of The University Of Calif. Amorphous silicon radiation detectors
US5192634A (en) * 1990-02-07 1993-03-09 Dai Nippon Printing Co., Ltd. A-selenium-tellurium photosensitive member and electrostatic information recording method
US5198673A (en) 1992-01-23 1993-03-30 General Electric Company Radiation image detector with optical gain selenium photosensors
DE4227096A1 (de) * 1992-08-17 1994-02-24 Philips Patentverwaltung Röntgenbilddetektor
WO1996003773A1 (en) * 1994-07-27 1996-02-08 Litton Systems Canada Limited Radiation imaging panel

Also Published As

Publication number Publication date
JP3838806B2 (ja) 2006-10-25
EP1043777A2 (de) 2000-10-11
JP2000275348A (ja) 2000-10-06
EP1043777B1 (de) 2007-05-02
US6403965B1 (en) 2002-06-11
EP1043777A3 (de) 2003-12-17
DE60034623T2 (de) 2007-12-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition