DE60234452D1 - Supraleitender dünnfilm mit säulenförmigen flussverankerungszentren erzeugt mittels nano-punkten oder nano-streifen - Google Patents

Supraleitender dünnfilm mit säulenförmigen flussverankerungszentren erzeugt mittels nano-punkten oder nano-streifen

Info

Publication number
DE60234452D1
DE60234452D1 DE60234452T DE60234452T DE60234452D1 DE 60234452 D1 DE60234452 D1 DE 60234452D1 DE 60234452 T DE60234452 T DE 60234452T DE 60234452 T DE60234452 T DE 60234452T DE 60234452 D1 DE60234452 D1 DE 60234452D1
Authority
DE
Germany
Prior art keywords
nano
pillar
super
thin film
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60234452T
Other languages
English (en)
Inventor
Ioan Adrian Crisan
Hideo Ihara
Yoshiko Ihara
Hideyo Ihara
Hidetaka Ihara
Gen-Ei Ihara
Chiaki Ihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Japan Science and Technology Agency
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science and Technology Agency, National Institute of Advanced Industrial Science and Technology AIST filed Critical Japan Science and Technology Agency
Application granted granted Critical
Publication of DE60234452D1 publication Critical patent/DE60234452D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0828—Introducing flux pinning centres
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
DE60234452T 2001-06-19 2002-06-17 Supraleitender dünnfilm mit säulenförmigen flussverankerungszentren erzeugt mittels nano-punkten oder nano-streifen Expired - Lifetime DE60234452D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001185597A JP3622147B2 (ja) 2001-06-19 2001-06-19 柱状ピン止め中心を有する超伝導薄膜及びその製造方法
PCT/JP2002/006007 WO2002103815A1 (en) 2001-06-19 2002-06-17 Superconducting thin film having columnar pin retaining center using nano-dots

Publications (1)

Publication Number Publication Date
DE60234452D1 true DE60234452D1 (de) 2009-12-31

Family

ID=19025150

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60234452T Expired - Lifetime DE60234452D1 (de) 2001-06-19 2002-06-17 Supraleitender dünnfilm mit säulenförmigen flussverankerungszentren erzeugt mittels nano-punkten oder nano-streifen

Country Status (5)

Country Link
US (2) US7491678B2 (de)
EP (1) EP1418632B1 (de)
JP (1) JP3622147B2 (de)
DE (1) DE60234452D1 (de)
WO (1) WO2002103815A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8119571B2 (en) * 2006-08-03 2012-02-21 Amit Goyal High performance electrical, magnetic, electromagnetic and electrooptical devices enabled by three dimensionally ordered nanodots and nanorods
US7442629B2 (en) * 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
JP4495426B2 (ja) 2003-08-29 2010-07-07 独立行政法人科学技術振興機構 超伝導膜およびその製造方法
US20050159298A1 (en) * 2004-01-16 2005-07-21 American Superconductor Corporation Oxide films with nanodot flux pinning centers
JPWO2006025252A1 (ja) * 2004-08-31 2008-05-08 国立大学法人名古屋大学 超伝導薄膜、その製造方法、およびそれを用いた超伝導線材、超伝導デバイス
JP4923477B2 (ja) * 2004-11-24 2012-04-25 株式会社豊田中央研究所 量子ドットアレイ及びその製造方法、並びに量子ドットアレイ素子及びその製造方法
DE102005032422B4 (de) * 2005-07-12 2008-06-26 Forschungszentrum Jülich GmbH Anordnung aus Träger und supraleitendem Film, Vortexdiode, umfassend eine derartige Anordnung sowie Verwendung von Vortexdioden für Filter
KR100891154B1 (ko) * 2008-01-03 2009-04-06 한국기계연구원 나노점 형성과 전구체 코팅 및 하소 열처리의 연속공정에의한 초전도 선재의 제조방법
KR100922371B1 (ko) * 2008-01-03 2009-10-19 한국기계연구원 초전도 박막 및 그 제조방법
US7919435B2 (en) 2008-09-30 2011-04-05 Ut-Battelle, Llc Superconductor films with improved flux pinning and reduced AC losses
KR100990633B1 (ko) 2009-03-11 2010-10-29 한국기계연구원 자속고정점이 형성된 초전도 선재 및 이의 제조방법
JP5858912B2 (ja) * 2009-07-28 2016-02-10 ユニバーシティー オブ ヒューストン システム 磁束ピンニングを改善するためのプレファブ式に作製されたナノ構造を有する超伝導部材
EP2410586B1 (de) 2010-07-19 2012-09-26 Bruker HTS GmbH Verfahren zur Herstellung eines HTS-beschichteten Leiters und HTS-beschichteter Leiter mit verringerten Verlusten
RU2477900C1 (ru) * 2012-03-01 2013-03-20 Федеральное государственное бюджетное учреждение науки Институт общей физики им. А.М. Прохорова Российской академии наук Способ обработки высокотемпературного сверхпроводника
JP2015176796A (ja) * 2014-03-17 2015-10-05 株式会社東芝 超伝導部材及びその製造方法
US11783953B2 (en) * 2018-10-02 2023-10-10 Massachusetts Institute Of Technology Cryogenic radiation enhancement of superconductors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02237179A (ja) 1989-03-10 1990-09-19 Matsushita Electric Ind Co Ltd 超電導体
JPH02253516A (ja) 1989-03-25 1990-10-12 Showa Electric Wire & Cable Co Ltd セラミックス超電導線路およびその形成方法
JPH05148084A (ja) 1991-11-29 1993-06-15 Sanyo Electric Co Ltd 超電導体
DE69211117T2 (de) 1992-01-28 1996-12-12 Ibm Flussschlauch-Verankerungsstrukturen für supraleitende Dünnschichten und Methoden ihrer Herstellung
EP0612114B1 (de) * 1993-02-15 1997-05-14 Sumitomo Electric Industries, Ltd. Verfahren zum Erzeugen einer strukturierten oxydsupraleitenden Dünnschicht
US5897945A (en) * 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
US6036774A (en) * 1996-02-26 2000-03-14 President And Fellows Of Harvard College Method of producing metal oxide nanorods
US5683967A (en) * 1996-03-15 1997-11-04 Frenkel; Anatoly Method for increasing the critical current density in type II superconducting materials
KR20010074667A (ko) * 1998-06-19 2001-08-08 추후보정 자립 정렬형 탄소 나노튜브 및 그 합성방법

Also Published As

Publication number Publication date
JP3622147B2 (ja) 2005-02-23
EP1418632B1 (de) 2009-11-18
US7491678B2 (en) 2009-02-17
US20090048113A1 (en) 2009-02-19
US20040235670A1 (en) 2004-11-25
WO2002103815A1 (en) 2002-12-27
EP1418632A4 (de) 2006-07-26
JP2003008090A (ja) 2003-01-10
EP1418632A1 (de) 2004-05-12

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: CRISAN, IOAN ADRIAN, BATH BA2 7AY, GB

Inventor name: IHARA, HIDEO, DECEASED, JP

Inventor name: IHARA, YOSHIKO, IBARAKI 305-0035, JP

Inventor name: IHARA, HIDEYO, TOKYO 113-0021, JP

Inventor name: IHARA, HIDETAKA, TOKYO 113-0021, JP

Inventor name: IHARA, GEN-EI, KAGAWA 761-0233, JP

Inventor name: IHARA, CHIAKI, TOKYO 173-0031, JP

8364 No opposition during term of opposition