DE60232699D1 - FET Strukturen mit symmetrischen und/oder verteilten vorwärtsgekoppelten Kondensatorverbindungen - Google Patents

FET Strukturen mit symmetrischen und/oder verteilten vorwärtsgekoppelten Kondensatorverbindungen

Info

Publication number
DE60232699D1
DE60232699D1 DE60232699T DE60232699T DE60232699D1 DE 60232699 D1 DE60232699 D1 DE 60232699D1 DE 60232699 T DE60232699 T DE 60232699T DE 60232699 T DE60232699 T DE 60232699T DE 60232699 D1 DE60232699 D1 DE 60232699D1
Authority
DE
Germany
Prior art keywords
symmetrical
fet structures
feedforward capacitor
capacitor connections
distributed feedforward
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60232699T
Other languages
English (en)
Inventor
Christopher Nelles Brindle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cobham Advanced Electronic Solutions Inc
Original Assignee
Cobham Defense Electronic Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cobham Defense Electronic Systems Corp filed Critical Cobham Defense Electronic Systems Corp
Application granted granted Critical
Publication of DE60232699D1 publication Critical patent/DE60232699D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
DE60232699T 2001-04-18 2002-04-18 FET Strukturen mit symmetrischen und/oder verteilten vorwärtsgekoppelten Kondensatorverbindungen Expired - Lifetime DE60232699D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28454601P 2001-04-18 2001-04-18
US09/966,189 US6426525B1 (en) 2001-04-18 2001-09-28 FET structures having symmetric and/or distributed feedforward capacitor connections

Publications (1)

Publication Number Publication Date
DE60232699D1 true DE60232699D1 (de) 2009-08-06

Family

ID=26962671

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60232699T Expired - Lifetime DE60232699D1 (de) 2001-04-18 2002-04-18 FET Strukturen mit symmetrischen und/oder verteilten vorwärtsgekoppelten Kondensatorverbindungen

Country Status (4)

Country Link
US (1) US6426525B1 (de)
EP (1) EP1251563B1 (de)
JP (1) JP2002373986A (de)
DE (1) DE60232699D1 (de)

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ES2334905T3 (es) * 2002-05-21 2010-03-17 Unilever N.V. Producto aireado congelado en un envase.
US6730953B2 (en) * 2002-09-13 2004-05-04 Mia-Com, Inc. Apparatus, methods and articles of manufacture for a low control voltage switch
US6803680B2 (en) * 2002-09-13 2004-10-12 Mia-Com, Inc. Apparatus, methods, and articles of manufacture for a switch having sharpened control voltage
US7250804B2 (en) 2002-12-17 2007-07-31 M/A -Com, Inc. Series/shunt switch and method of control
US7030515B2 (en) 2003-05-21 2006-04-18 M/A-Com, Inc. Individually biased transistor high frequency switch
US20050116257A1 (en) * 2003-06-20 2005-06-02 James Oakes Field effect transister structures
JP4380264B2 (ja) * 2003-08-25 2009-12-09 カシオ計算機株式会社 接合基板及び基板の接合方法
US20060237750A1 (en) * 2004-06-21 2006-10-26 James Oakes Field effect transistor structures
GB0612800D0 (en) * 2006-06-28 2006-08-09 Filtronic Compound Semiconduct A field effect transistor and a linear antenna switch arm
GB2475645B (en) * 2006-06-28 2011-10-26 Rfmd A field effect transistor
JP2009231583A (ja) * 2008-03-24 2009-10-08 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
JP5397289B2 (ja) 2010-03-29 2014-01-22 住友電気工業株式会社 電界効果トランジスタ
JP2012028977A (ja) * 2010-07-22 2012-02-09 New Japan Radio Co Ltd 付加容量付電界効果トランジスタ及び半導体スイッチ回路
JP2015207576A (ja) 2014-04-17 2015-11-19 ソニー株式会社 半導体装置、アンテナスイッチ回路、および無線通信装置
US11670605B2 (en) * 2020-04-03 2023-06-06 Wolfspeed, Inc. RF amplifier devices including interconnect structures and methods of manufacturing
US11837457B2 (en) 2020-09-11 2023-12-05 Wolfspeed, Inc. Packaging for RF transistor amplifiers
EP4343831A1 (de) * 2022-09-25 2024-03-27 Wolfspeed, Inc. Feldeffekttransistor mit integrierter serienkapazität

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5944848A (ja) * 1982-09-06 1984-03-13 Nec Corp 高周波用高出力トランジスタ
US4725747A (en) * 1986-08-29 1988-02-16 Texas Instruments Incorporated Integrated circuit distributed geometry to reduce switching noise
JPS6377165A (ja) * 1986-09-19 1988-04-07 Mitsubishi Electric Corp 半導体装置
JP2594558B2 (ja) * 1987-04-30 1997-03-26 日本電気株式会社 電界効果型トランジスタ
US4786881A (en) * 1987-08-27 1988-11-22 General Electric Company Amplifier with integrated feedback network
US4949139A (en) * 1988-09-09 1990-08-14 Atmel Corporation Transistor construction for low noise output driver
US6285070B1 (en) * 1995-12-22 2001-09-04 Micron Technology, Inc. Method of forming semiconductor die with integral decoupling capacitor
US5955763A (en) * 1997-09-16 1999-09-21 Winbond Electronics Corp. Low noise, high current-drive MOSFET structure for uniform serpentine-shaped poly-gate turn-on during an ESD event
US6002156A (en) * 1997-09-16 1999-12-14 Winbond Electronics Corp. Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering
JPH11122054A (ja) * 1997-10-14 1999-04-30 Toshiba Corp モノリシックマイクロ波増幅器
JPH11251584A (ja) * 1998-03-03 1999-09-17 Matsushita Electron Corp トランジスタおよびそれを用いた高周波増幅器
JP3373435B2 (ja) * 1998-06-25 2003-02-04 日本電信電話株式会社 抵抗帰還トランジスタ

Also Published As

Publication number Publication date
US6426525B1 (en) 2002-07-30
JP2002373986A (ja) 2002-12-26
EP1251563B1 (de) 2009-06-24
EP1251563A3 (de) 2007-01-03
EP1251563A2 (de) 2002-10-23

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