GB2475645B - A field effect transistor - Google Patents

A field effect transistor

Info

Publication number
GB2475645B
GB2475645B GB1103577A GB201103577A GB2475645B GB 2475645 B GB2475645 B GB 2475645B GB 1103577 A GB1103577 A GB 1103577A GB 201103577 A GB201103577 A GB 201103577A GB 2475645 B GB2475645 B GB 2475645B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1103577A
Other versions
GB2475645A (en
GB201103577D0 (en
Inventor
Ronald Arnold
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RFMD UK Ltd
Original Assignee
RFMD UK Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB0612794.8A external-priority patent/GB0612794D0/en
Application filed by RFMD UK Ltd filed Critical RFMD UK Ltd
Publication of GB201103577D0 publication Critical patent/GB201103577D0/en
Publication of GB2475645A publication Critical patent/GB2475645A/en
Application granted granted Critical
Publication of GB2475645B publication Critical patent/GB2475645B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6878—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using multi-gate field-effect transistors
GB1103577A 2006-06-28 2007-06-26 A field effect transistor Expired - Fee Related GB2475645B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0612794.8A GB0612794D0 (en) 2006-06-28 2006-06-28 A linear antenna switch arm and a field effect transistor
GB0712385A GB2439642B (en) 2006-06-28 2007-06-26 A linear antenna switch and a field effect transistor

Publications (3)

Publication Number Publication Date
GB201103577D0 GB201103577D0 (en) 2011-04-13
GB2475645A GB2475645A (en) 2011-05-25
GB2475645B true GB2475645B (en) 2011-10-26

Family

ID=43969380

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1103577A Expired - Fee Related GB2475645B (en) 2006-06-28 2007-06-26 A field effect transistor

Country Status (1)

Country Link
GB (1) GB2475645B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6426525B1 (en) * 2001-04-18 2002-07-30 Tyco Electronics Corporation FET structures having symmetric and/or distributed feedforward capacitor connections
US20050047038A1 (en) * 2003-08-27 2005-03-03 Akishige Nakajima Electric component for communication device and semiconductor device for switching transmission and reception
US20050116257A1 (en) * 2003-06-20 2005-06-02 James Oakes Field effect transister structures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6426525B1 (en) * 2001-04-18 2002-07-30 Tyco Electronics Corporation FET structures having symmetric and/or distributed feedforward capacitor connections
US20050116257A1 (en) * 2003-06-20 2005-06-02 James Oakes Field effect transister structures
US20050047038A1 (en) * 2003-08-27 2005-03-03 Akishige Nakajima Electric component for communication device and semiconductor device for switching transmission and reception

Also Published As

Publication number Publication date
GB2475645A (en) 2011-05-25
GB201103577D0 (en) 2011-04-13

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20190626