DE60232358D1 - Magnetoresistive bitstruktur und verfahren zu ihrer herstellung - Google Patents
Magnetoresistive bitstruktur und verfahren zu ihrer herstellungInfo
- Publication number
- DE60232358D1 DE60232358D1 DE60232358T DE60232358T DE60232358D1 DE 60232358 D1 DE60232358 D1 DE 60232358D1 DE 60232358 T DE60232358 T DE 60232358T DE 60232358 T DE60232358 T DE 60232358T DE 60232358 D1 DE60232358 D1 DE 60232358D1
- Authority
- DE
- Germany
- Prior art keywords
- bit structure
- production
- magnetoresistive bit
- magnetic bit
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/999,684 US6717194B2 (en) | 2001-10-30 | 2001-10-30 | Magneto-resistive bit structure and method of manufacture therefor |
PCT/US2002/034914 WO2003038864A2 (en) | 2001-10-30 | 2002-10-29 | Magneto-resistive bit structure and method of manufacturing therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60232358D1 true DE60232358D1 (de) | 2009-06-25 |
Family
ID=25546595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60232358T Expired - Lifetime DE60232358D1 (de) | 2001-10-30 | 2002-10-29 | Magnetoresistive bitstruktur und verfahren zu ihrer herstellung |
Country Status (9)
Country | Link |
---|---|
US (3) | US6717194B2 (de) |
EP (1) | EP1449239B1 (de) |
JP (1) | JP2005508084A (de) |
KR (1) | KR100601317B1 (de) |
CN (1) | CN1572001B (de) |
AT (1) | ATE431621T1 (de) |
AU (1) | AU2002361582A1 (de) |
DE (1) | DE60232358D1 (de) |
WO (1) | WO2003038864A2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124189A (ja) * | 2001-10-10 | 2003-04-25 | Fujitsu Ltd | 半導体装置の製造方法 |
US6735112B2 (en) * | 2002-02-06 | 2004-05-11 | Micron Technology, Inc. | Magneto-resistive memory cell structures with improved selectivity |
US6765823B1 (en) | 2003-01-29 | 2004-07-20 | Micron Technology Incorporated | Magnetic memory cell with shape anisotropy |
US7114240B2 (en) * | 2003-11-12 | 2006-10-03 | Honeywell International, Inc. | Method for fabricating giant magnetoresistive (GMR) devices |
US7973349B2 (en) * | 2005-09-20 | 2011-07-05 | Grandis Inc. | Magnetic device having multilayered free ferromagnetic layer |
US7777261B2 (en) * | 2005-09-20 | 2010-08-17 | Grandis Inc. | Magnetic device having stabilized free ferromagnetic layer |
US7957179B2 (en) * | 2007-06-27 | 2011-06-07 | Grandis Inc. | Magnetic shielding in magnetic multilayer structures |
US7982275B2 (en) * | 2007-08-22 | 2011-07-19 | Grandis Inc. | Magnetic element having low saturation magnetization |
US7894248B2 (en) * | 2008-09-12 | 2011-02-22 | Grandis Inc. | Programmable and redundant circuitry based on magnetic tunnel junction (MTJ) |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3381171A (en) * | 1964-10-14 | 1968-04-30 | Westinghouse Electric Corp | Variable frequency magnetic field arc heater apparatus and variable frequency field producing means for use therein |
JPS6076078A (ja) * | 1983-09-30 | 1985-04-30 | Fujitsu Ltd | 磁気ランダム・アクセスメモリ方式 |
US4780848A (en) | 1986-06-03 | 1988-10-25 | Honeywell Inc. | Magnetoresistive memory with multi-layer storage cells having layers of limited thickness |
US4731757A (en) | 1986-06-27 | 1988-03-15 | Honeywell Inc. | Magnetoresistive memory including thin film storage cells having tapered ends |
US4945397A (en) * | 1986-12-08 | 1990-07-31 | Honeywell Inc. | Resistive overlayer for magnetic films |
US4897288A (en) * | 1987-01-28 | 1990-01-30 | Honeywell Inc. | Vialess shorting bars for magnetoresistive devices |
US4918655A (en) * | 1988-02-29 | 1990-04-17 | Honeywell Inc. | Magnetic device integrated circuit interconnection system |
JPH02237086A (ja) * | 1989-03-09 | 1990-09-19 | Sankyo Seiki Mfg Co Ltd | 磁気抵抗効果素子の製造方法 |
JPH03156915A (ja) * | 1989-11-15 | 1991-07-04 | Sony Corp | 多層レジスト法によるパターン形成方法 |
JPH06224489A (ja) * | 1993-01-28 | 1994-08-12 | Toyota Autom Loom Works Ltd | 抵抗装置およびその製造方法 |
JP3184352B2 (ja) * | 1993-02-18 | 2001-07-09 | 松下電器産業株式会社 | メモリー素子 |
JPH08213487A (ja) * | 1994-11-28 | 1996-08-20 | Sony Corp | 半導体メモリセル及びその作製方法 |
US5496759A (en) | 1994-12-29 | 1996-03-05 | Honeywell Inc. | Highly producible magnetoresistive RAM process |
US5569617A (en) | 1995-12-21 | 1996-10-29 | Honeywell Inc. | Method of making integrated spacer for magnetoresistive RAM |
US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
JP3941133B2 (ja) * | 1996-07-18 | 2007-07-04 | 富士通株式会社 | 半導体装置およびその製造方法 |
JP3735443B2 (ja) * | 1997-04-03 | 2006-01-18 | 株式会社東芝 | 交換結合膜とそれを用いた磁気抵抗効果素子、磁気ヘッドおよび磁気記憶装置 |
JPH11238377A (ja) * | 1998-02-24 | 1999-08-31 | Motorola Inc | 不揮発性磁気抵抗メモリのための浮遊磁気遮へい |
JP3157772B2 (ja) * | 1998-03-13 | 2001-04-16 | 鹿児島日本電気株式会社 | メタル配線のリペア方法 |
EP0959475A3 (de) * | 1998-05-18 | 2000-11-08 | Canon Kabushiki Kaisha | Magnetischer Dünnfilmspeicher sowie Schreibe- und Leseverfahren und Anordnung unter Verwendung solchen Speichers |
JPH11354728A (ja) * | 1998-06-09 | 1999-12-24 | Canon Inc | 磁性薄膜メモリおよびその記録再生駆動方法 |
US6381171B1 (en) * | 1999-05-19 | 2002-04-30 | Kabushiki Kaisha Toshiba | Magnetic element, magnetic read head, magnetic storage device, magnetic memory device |
JP2001093977A (ja) * | 1999-09-21 | 2001-04-06 | Toshiba Corp | 半導体装置の製造方法 |
US6392922B1 (en) * | 2000-08-14 | 2002-05-21 | Micron Technology, Inc. | Passivated magneto-resistive bit structure and passivation method therefor |
US6487110B2 (en) * | 2000-09-27 | 2002-11-26 | Canon Kabushiki Kaisha | Nonvolatile solid-state memory device using magnetoresistive effect and recording and reproducing method of the same |
US6555858B1 (en) * | 2000-11-15 | 2003-04-29 | Motorola, Inc. | Self-aligned magnetic clad write line and its method of formation |
US6649423B2 (en) * | 2001-10-04 | 2003-11-18 | Hewlett-Packard Development Company, L.P. | Method for modifying switching field characteristics of magnetic tunnel junctions |
-
2001
- 2001-10-30 US US09/999,684 patent/US6717194B2/en not_active Expired - Lifetime
-
2002
- 2002-10-29 CN CN02820834XA patent/CN1572001B/zh not_active Expired - Lifetime
- 2002-10-29 WO PCT/US2002/034914 patent/WO2003038864A2/en active Application Filing
- 2002-10-29 AU AU2002361582A patent/AU2002361582A1/en not_active Abandoned
- 2002-10-29 JP JP2003541022A patent/JP2005508084A/ja active Pending
- 2002-10-29 KR KR1020047005870A patent/KR100601317B1/ko active IP Right Grant
- 2002-10-29 DE DE60232358T patent/DE60232358D1/de not_active Expired - Lifetime
- 2002-10-29 EP EP02797059A patent/EP1449239B1/de not_active Expired - Lifetime
- 2002-10-29 AT AT02797059T patent/ATE431621T1/de not_active IP Right Cessation
-
2003
- 2003-12-11 US US10/734,663 patent/US7029923B2/en not_active Expired - Lifetime
-
2004
- 2004-01-26 US US10/765,546 patent/US6872997B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2003038864B1 (en) | 2003-10-30 |
US6872997B2 (en) | 2005-03-29 |
CN1572001A (zh) | 2005-01-26 |
ATE431621T1 (de) | 2009-05-15 |
JP2005508084A (ja) | 2005-03-24 |
US20030081462A1 (en) | 2003-05-01 |
CN1572001B (zh) | 2010-05-26 |
WO2003038864A3 (en) | 2003-09-18 |
EP1449239A4 (de) | 2006-05-03 |
US20040126709A1 (en) | 2004-07-01 |
US20040155307A1 (en) | 2004-08-12 |
EP1449239A2 (de) | 2004-08-25 |
US7029923B2 (en) | 2006-04-18 |
US6717194B2 (en) | 2004-04-06 |
EP1449239B1 (de) | 2009-05-13 |
WO2003038864A2 (en) | 2003-05-08 |
KR100601317B1 (ko) | 2006-07-18 |
AU2002361582A1 (en) | 2003-05-12 |
KR20050040816A (ko) | 2005-05-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |