DE60025146D1 - Herstellungsverfahren für eine magnetische fühleranordnung - Google Patents

Herstellungsverfahren für eine magnetische fühleranordnung

Info

Publication number
DE60025146D1
DE60025146D1 DE60025146T DE60025146T DE60025146D1 DE 60025146 D1 DE60025146 D1 DE 60025146D1 DE 60025146 T DE60025146 T DE 60025146T DE 60025146 T DE60025146 T DE 60025146T DE 60025146 D1 DE60025146 D1 DE 60025146D1
Authority
DE
Germany
Prior art keywords
manufacturing
fender arrangement
magnetic
magnetic fender
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60025146T
Other languages
English (en)
Other versions
DE60025146T2 (de
Inventor
H Lenssen
Zon B Van
E Kuiper
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE60025146D1 publication Critical patent/DE60025146D1/de
Application granted granted Critical
Publication of DE60025146T2 publication Critical patent/DE60025146T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
DE60025146T 1999-06-18 2000-06-15 Herstellungsverfahren für eine magnetische fühleranordnung Expired - Lifetime DE60025146T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP99201961 1999-06-18
EP99201961 1999-06-18
PCT/EP2000/005510 WO2000079297A1 (en) 1999-06-18 2000-06-15 Method for manufacturing a magnetic sensor device

Publications (2)

Publication Number Publication Date
DE60025146D1 true DE60025146D1 (de) 2006-02-02
DE60025146T2 DE60025146T2 (de) 2006-08-24

Family

ID=8240323

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60025146T Expired - Lifetime DE60025146T2 (de) 1999-06-18 2000-06-15 Herstellungsverfahren für eine magnetische fühleranordnung

Country Status (5)

Country Link
US (1) US6465053B1 (de)
EP (1) EP1105743B1 (de)
JP (1) JP2003502674A (de)
DE (1) DE60025146T2 (de)
WO (1) WO2000079297A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2809185B1 (fr) * 2000-05-19 2002-08-30 Thomson Csf Capteur de champ magnetique utilisant la magneto resistance, et procede de fabrication
JP3596600B2 (ja) * 2000-06-02 2004-12-02 ヤマハ株式会社 磁気センサ及び同磁気センサの製造方法
DE10028640B4 (de) * 2000-06-09 2005-11-03 Institut für Physikalische Hochtechnologie e.V. Wheatstonebrücke, beinhaltend Brückenelemente, bestehend aus einem Spin-Valve-System, sowie ein Verfahren zu deren Herstellung
JP3498737B2 (ja) * 2001-01-24 2004-02-16 ヤマハ株式会社 磁気センサの製造方法
US6946834B2 (en) * 2001-06-01 2005-09-20 Koninklijke Philips Electronics N.V. Method of orienting an axis of magnetization of a first magnetic element with respect to a second magnetic element, semimanufacture for obtaining a sensor, sensor for measuring a magnetic field
JP2004301741A (ja) * 2003-03-31 2004-10-28 Denso Corp 磁気センサ
US20060127701A1 (en) * 2003-06-11 2006-06-15 Koninklijke Phillips Electronics N.C. Method of manufacturing a device with a magnetic layer-structure
KR100548997B1 (ko) 2003-08-12 2006-02-02 삼성전자주식회사 다층박막구조의 자유층을 갖는 자기터널 접합 구조체들 및이를 채택하는 자기 램 셀들
TWI250651B (en) * 2003-08-12 2006-03-01 Samsung Electronics Co Ltd Magnetic tunnel junction and memory device including the same
US7473656B2 (en) * 2003-10-23 2009-01-06 International Business Machines Corporation Method for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacks
JP4433820B2 (ja) * 2004-02-20 2010-03-17 Ｔｄｋ株式会社 磁気検出素子およびその形成方法ならびに磁気センサ、電流計
JP4557134B2 (ja) * 2004-03-12 2010-10-06 ヤマハ株式会社 磁気センサの製造方法、同磁気センサの製造方法に使用されるマグネットアレイ及び同マグネットアレイの製造方法
US7112957B2 (en) * 2004-06-16 2006-09-26 Honeywell International Inc. GMR sensor with flux concentrators
US20060006864A1 (en) * 2004-07-08 2006-01-12 Honeywell International, Inc. Integrated magnetoresitive speed and direction sensor
DE102004043737A1 (de) * 2004-09-09 2006-03-30 Siemens Ag Vorrichtung zum Erfassen des Gradienten eines Magnetfeldes und Verfahren zur Herstellung der Vorrichtung
JP5237943B2 (ja) * 2007-06-19 2013-07-17 アルプス電気株式会社 磁気検出装置及びその製造方法、ならびに前記磁気検出装置を用いた角度検出装置、位置検出装置及び磁気スイッチ
DE102007032867B4 (de) 2007-07-13 2009-12-24 Infineon Technologies Ag Magnetoresistive Magnetfeldsensorstrukturen und Herstellungsverfahren
JP4780117B2 (ja) * 2008-01-30 2011-09-28 日立金属株式会社 角度センサ、その製造方法及びそれを用いた角度検知装置
CN102016513B (zh) * 2009-03-30 2013-04-10 日立金属株式会社 旋转角度检测装置
JP2011064653A (ja) * 2009-09-18 2011-03-31 Tdk Corp 磁気センサおよびその製造方法
JP5177197B2 (ja) 2010-10-13 2013-04-03 Ｔｄｋ株式会社 回転磁界センサ
JP5131339B2 (ja) 2010-11-17 2013-01-30 Ｔｄｋ株式会社 回転磁界センサ
JP2015108527A (ja) * 2013-12-03 2015-06-11 株式会社東海理化電機製作所 磁気センサ
EP3455864B1 (de) * 2016-05-26 2024-10-23 The Trustees Of The University Of Pennsylvania Laminierte magnetkerne

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0565102A2 (de) * 1992-04-10 1993-10-13 Hitachi Maxell, Ltd. Magnetische Schichtungen und Magnetköpfe und magnetische Aufnahme-/Wiedergabegeräte, die solche Schichtungen benutzen
JPH05291037A (ja) * 1992-04-10 1993-11-05 Hitachi Maxell Ltd 積層磁性膜およびそれを用いた磁気ヘツドならびに磁気記録・再生装置
KR100368848B1 (ko) 1994-04-15 2003-04-03 코닌클리케 필립스 일렉트로닉스 엔.브이. 자계센서,이센서를구비하는장치및이센서를제조하는방법
DE4427495C2 (de) * 1994-08-03 2000-04-13 Siemens Ag Sensoreinrichtung mit einem GMR-Sensorelement
EP0725936A1 (de) * 1994-08-28 1996-08-14 Koninklijke Philips Electronics N.V. Magnetfelddetektor
US5561368A (en) * 1994-11-04 1996-10-01 International Business Machines Corporation Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate
JPH09283816A (ja) * 1996-04-08 1997-10-31 Fujitsu Ltd 磁界を感知する磁気抵抗センサ
JPH09199769A (ja) * 1996-01-19 1997-07-31 Fujitsu Ltd 磁気抵抗効果素子及び磁気センサ
DE19619806A1 (de) * 1996-05-15 1997-11-20 Siemens Ag Magnetfeldempfindliche Sensoreinrichtung mit mehreren GMR-Sensorelementen
JP3886589B2 (ja) * 1997-03-07 2007-02-28 アルプス電気株式会社 巨大磁気抵抗効果素子センサ
WO1998057188A1 (en) * 1997-06-13 1998-12-17 Koninklijke Philips Electronics N.V. Sensor comprising a wheatstone bridge

Also Published As

Publication number Publication date
US6465053B1 (en) 2002-10-15
WO2000079297A1 (en) 2000-12-28
EP1105743B1 (de) 2005-12-28
JP2003502674A (ja) 2003-01-21
DE60025146T2 (de) 2006-08-24
EP1105743A1 (de) 2001-06-13

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