DE60229279D1 - Integrierte umleitungsdiode in solarzellen und herstellungsverfahren - Google Patents

Integrierte umleitungsdiode in solarzellen und herstellungsverfahren

Info

Publication number
DE60229279D1
DE60229279D1 DE60229279T DE60229279T DE60229279D1 DE 60229279 D1 DE60229279 D1 DE 60229279D1 DE 60229279 T DE60229279 T DE 60229279T DE 60229279 T DE60229279 T DE 60229279T DE 60229279 D1 DE60229279 D1 DE 60229279D1
Authority
DE
Germany
Prior art keywords
diode
solar cells
manufacturing
cell
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60229279T
Other languages
English (en)
Inventor
Paul R Sharps
Daniel J Aiken
Doug Collins
Mark A Stan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Solaero Solar Power Inc
Original Assignee
Emcore Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Emcore Corp filed Critical Emcore Corp
Priority claimed from PCT/US2002/034416 external-priority patent/WO2003054926A2/en
Application granted granted Critical
Publication of DE60229279D1 publication Critical patent/DE60229279D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • H01L27/1421—Energy conversion devices comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/291—Applications
    • Y10S136/293—Circuits
DE60229279T 2001-10-24 2002-10-24 Integrierte umleitungsdiode in solarzellen und herstellungsverfahren Expired - Lifetime DE60229279D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/999,598 US6680432B2 (en) 2001-10-24 2001-10-24 Apparatus and method for optimizing the efficiency of a bypass diode in multijunction solar cells
PCT/US2002/034416 WO2003054926A2 (en) 2001-10-24 2002-10-24 An apparatus and method for integral bypass diode in solar cells

Publications (1)

Publication Number Publication Date
DE60229279D1 true DE60229279D1 (de) 2008-11-20

Family

ID=25546513

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60229279T Expired - Lifetime DE60229279D1 (de) 2001-10-24 2002-10-24 Integrierte umleitungsdiode in solarzellen und herstellungsverfahren
DE10297371T Ceased DE10297371T5 (de) 2001-10-24 2002-10-24 Vorrichtung und Verfahren für eine integrale Bypassdiode in Solarzelle

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE10297371T Ceased DE10297371T5 (de) 2001-10-24 2002-10-24 Vorrichtung und Verfahren für eine integrale Bypassdiode in Solarzelle

Country Status (6)

Country Link
US (3) US6680432B2 (de)
EP (2) EP1440480B1 (de)
JP (1) JP4119844B2 (de)
AT (1) ATE410789T1 (de)
AU (1) AU2002365270A1 (de)
DE (2) DE60229279D1 (de)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278054B1 (en) * 1998-05-28 2001-08-21 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode
US6864414B2 (en) * 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells
US6680432B2 (en) 2001-10-24 2004-01-20 Emcore Corporation Apparatus and method for optimizing the efficiency of a bypass diode in multijunction solar cells
US8173891B2 (en) * 2002-05-21 2012-05-08 Alliance For Sustainable Energy, Llc Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps
US8067687B2 (en) 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
US20060162768A1 (en) 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
US7071407B2 (en) * 2002-10-31 2006-07-04 Emcore Corporation Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
US6784358B2 (en) * 2002-11-08 2004-08-31 The Boeing Co. Solar cell structure utilizing an amorphous silicon discrete by-pass diode
JP4849786B2 (ja) * 2004-08-30 2012-01-11 シャープ株式会社 多接合型化合物太陽電池およびその製造方法
US8772628B2 (en) 2004-12-30 2014-07-08 Alliance For Sustainable Energy, Llc High performance, high bandgap, lattice-mismatched, GaInP solar cells
US10374120B2 (en) * 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
US20060231130A1 (en) * 2005-04-19 2006-10-19 Sharps Paul R Solar cell with feedthrough via
US7659474B2 (en) * 2005-05-04 2010-02-09 The Boeing Company Solar cell array with isotype-heterojunction diode
EP1920468B1 (de) * 2005-09-01 2014-02-26 Merck Patent GmbH Mit bypassdiode integrierte fotovoltaische zellen
US7687707B2 (en) * 2005-11-16 2010-03-30 Emcore Solar Power, Inc. Via structures in solar cells with bypass diode
US20100078057A1 (en) * 2006-04-13 2010-04-01 Franz Karg Solar module
US8536445B2 (en) 2006-06-02 2013-09-17 Emcore Solar Power, Inc. Inverted metamorphic multijunction solar cells
US20080029151A1 (en) * 2006-08-07 2008-02-07 Mcglynn Daniel Terrestrial solar power system using III-V semiconductor solar cells
US8686282B2 (en) 2006-08-07 2014-04-01 Emcore Solar Power, Inc. Solar power system for space vehicles or satellites using inverted metamorphic multijunction solar cells
US7842881B2 (en) * 2006-10-19 2010-11-30 Emcore Solar Power, Inc. Solar cell structure with localized doping in cap layer
US20080110489A1 (en) * 2006-11-14 2008-05-15 Fareed Sepehry-Fard Very High Efficiency Multi-Junction Solar Spectrum Integrator Cells, and the Corresponding System and Method
JP2010514165A (ja) * 2006-12-15 2010-04-30 エバーグリーン ソーラー， インコーポレイテッド プラグでつなぐ光起電力性モジュール
US20080149173A1 (en) * 2006-12-21 2008-06-26 Sharps Paul R Inverted metamorphic solar cell with bypass diode
US20100093127A1 (en) * 2006-12-27 2010-04-15 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cell Mounted on Metallized Flexible Film
US20080245409A1 (en) * 2006-12-27 2008-10-09 Emcore Corporation Inverted Metamorphic Solar Cell Mounted on Flexible Film
US7687870B2 (en) * 2006-12-29 2010-03-30 Panasonic Corporation Laterally configured electrooptical devices
US20080185038A1 (en) * 2007-02-02 2008-08-07 Emcore Corporation Inverted metamorphic solar cell with via for backside contacts
US7381886B1 (en) 2007-07-30 2008-06-03 Emcore Corporation Terrestrial solar array
US20090032090A1 (en) * 2007-07-30 2009-02-05 Emcore Corporation Method for assembling a terrestrial solar array including a rigid support frame
US20090038679A1 (en) * 2007-08-09 2009-02-12 Emcore Corporation Thin Multijunction Solar Cells With Plated Metal OHMIC Contact and Support
US20100233838A1 (en) * 2009-03-10 2010-09-16 Emcore Solar Power, Inc. Mounting of Solar Cells on a Flexible Substrate
US8895342B2 (en) 2007-09-24 2014-11-25 Emcore Solar Power, Inc. Heterojunction subcells in inverted metamorphic multijunction solar cells
US10381505B2 (en) 2007-09-24 2019-08-13 Solaero Technologies Corp. Inverted metamorphic multijunction solar cells including metamorphic layers
US20090188561A1 (en) * 2008-01-25 2009-07-30 Emcore Corporation High concentration terrestrial solar array with III-V compound semiconductor cell
US8513514B2 (en) 2008-10-24 2013-08-20 Suncore Photovoltaics, Inc. Solar tracking for terrestrial solar arrays with variable start and stop positions
US9331228B2 (en) * 2008-02-11 2016-05-03 Suncore Photovoltaics, Inc. Concentrated photovoltaic system modules using III-V semiconductor solar cells
US8759138B2 (en) 2008-02-11 2014-06-24 Suncore Photovoltaics, Inc. Concentrated photovoltaic system modules using III-V semiconductor solar cells
US8093492B2 (en) * 2008-02-11 2012-01-10 Emcore Solar Power, Inc. Solar cell receiver for concentrated photovoltaic system for III-V semiconductor solar cell
US20100012175A1 (en) * 2008-07-16 2010-01-21 Emcore Solar Power, Inc. Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells
US8507837B2 (en) * 2008-10-24 2013-08-13 Suncore Photovoltaics, Inc. Techniques for monitoring solar array performance and applications thereof
US8283558B2 (en) * 2009-03-27 2012-10-09 The Boeing Company Solar cell assembly with combined handle substrate and bypass diode and method
JP2012527786A (ja) * 2009-05-25 2012-11-08 デイ４ エネルギー インコーポレイテッド 光起電力モジュールストリング装置およびそのための影に入ることからの保護
US20110017285A1 (en) * 2009-07-23 2011-01-27 Emcore Solar Power, Inc. Solar Cell with Textured Coverglass
US9012771B1 (en) 2009-09-03 2015-04-21 Suncore Photovoltaics, Inc. Solar cell receiver subassembly with a heat shield for use in a concentrating solar system
US9806215B2 (en) * 2009-09-03 2017-10-31 Suncore Photovoltaics, Inc. Encapsulated concentrated photovoltaic system subassembly for III-V semiconductor solar cells
US20110073887A1 (en) * 2009-09-25 2011-03-31 Alliance For Sustainable Energy, Llc Optoelectronic devices having a direct-band-gap base and an indirect-band-gap emitter
US9356218B1 (en) * 2009-11-13 2016-05-31 The Boeing Company Internally heated concentrated solar power (CSP) thermal absorber
EP2628183A4 (de) 2010-10-12 2014-04-02 Alliance Sustainable Energy Gruppe-iii-v-legierungen mit hoher bandlücke für hocheffiziente optoelektronik
US8460964B2 (en) 2010-11-17 2013-06-11 E I Du Pont De Nemours And Company Method for producing an array of thin-film photovoltaic cells having a totally separated integrated bypass diode and method for producing a panel incorporating the same
US9070810B2 (en) * 2011-02-04 2015-06-30 Azur Space Solar Power Gmbh Multiple solar cell and method for manufacturing the same
DE102011000521A1 (de) * 2011-02-04 2012-08-23 Azur Space Solar Power Gmbh Mehrfachsolarzelle sowie Verfahren zur Herstellung einer solchen
US11121272B2 (en) 2011-02-09 2021-09-14 Utica Leaseco, Llc Self-bypass diode function for gallium arsenide photovoltaic devices
US9716196B2 (en) 2011-02-09 2017-07-25 Alta Devices, Inc. Self-bypass diode function for gallium arsenide photovoltaic devices
US20120199177A1 (en) * 2011-02-09 2012-08-09 Atomic Energy Council-Institute Of Nuclear Energy Research Multijunction Solar Cell Device
US20120285519A1 (en) 2011-05-10 2012-11-15 Emcore Solar Power, Inc. Grid design for iii-v compound semiconductor cell
DE102011115340A1 (de) * 2011-10-07 2013-04-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement im Mehrschichtaufbau und hieraus gebildetes Modul
US9293619B2 (en) 2011-11-20 2016-03-22 Solexel, Inc. Smart photovoltaic cells and modules
US10181541B2 (en) 2011-11-20 2019-01-15 Tesla, Inc. Smart photovoltaic cells and modules
RU2515420C2 (ru) * 2012-08-16 2014-05-10 Открытое акционерное общество "Сатурн" Способ изготовления фотопреобразователя со встроенным диодом
RU2515210C1 (ru) * 2012-10-01 2014-05-10 Российская Федерация, от имени которой выступает Министерство промышленности и торговли Российской Федерации (Минпромторг России) Концентраторный каскадный фотопреобразователь
EP2909866A4 (de) * 2012-10-16 2016-06-29 Solexel Inc Systeme und verfahren für monolithisch integrierte bypass-schaltungen in fotovoltaischen solarzellen und modulen
US10153388B1 (en) 2013-03-15 2018-12-11 Solaero Technologies Corp. Emissivity coating for space solar cell arrays
US9590131B2 (en) 2013-03-27 2017-03-07 Alliance For Sustainable Energy, Llc Systems and methods for advanced ultra-high-performance InP solar cells
US20150349708A1 (en) * 2013-04-13 2015-12-03 Solexel, Inc. Solar photovoltaic module power control and status monitoring system utilizing laminate-embedded remote access module switch
US10784815B2 (en) 2013-04-13 2020-09-22 Sigmagen, Inc. Solar photovoltaic module remote access module switch and real-time temperature monitoring
DE202014002666U1 (de) 2014-03-26 2014-07-03 Emcore Solar Power, Inc. Solarzellenanordnung
DE102014004390A1 (de) 2014-03-26 2015-10-01 Solaero Technologies Corp. Solarzellenanordnung mit Bypass-Dioden
DE102015002513A1 (de) * 2015-03-02 2016-09-08 Azur Space Solar Power Gmbh Solarzellenvorrichtung
US9935209B2 (en) * 2016-01-28 2018-04-03 Solaero Technologies Corp. Multijunction metamorphic solar cell for space applications
CN105489700B (zh) * 2015-12-03 2017-06-27 中国电子科技集团公司第十八研究所 一种带集成二极管的太阳电池的制备方法
US11316053B2 (en) * 2016-08-26 2022-04-26 Sol Aero Technologies Corp. Multijunction solar cell assembly
US10038051B2 (en) * 2016-02-19 2018-07-31 Infineon Technologies Austria Ag Vertical potential short in the periphery region of a III-nitride stack for preventing lateral leakage

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2827049A1 (de) * 1978-06-20 1980-01-10 Siemens Ag Solarzellenbatterie und verfahren zu ihrer herstellung
JPS57204180A (en) 1981-06-09 1982-12-14 Mitsubishi Electric Corp Gaas solar battery element
US4598164A (en) * 1983-10-06 1986-07-01 Exxon Research And Engineering Co. Solar cell made from amorphous superlattice material
US4759803A (en) 1987-08-07 1988-07-26 Applied Solar Energy Corporation Monolithic solar cell and bypass diode system
US5155565A (en) * 1988-02-05 1992-10-13 Minnesota Mining And Manufacturing Company Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
MY104396A (en) 1988-02-05 1994-03-31 Minnesota Mining & Mfg Method for manufacturing an amorphous silicon thin film solar cell and schottky barrier diode on a common substrate.
JPH0377382A (ja) 1989-08-19 1991-04-02 Mitsubishi Electric Corp 太陽電池セル
EP0369666B1 (de) 1988-11-16 1995-06-14 Mitsubishi Denki Kabushiki Kaisha Sonnenzelle
US5138403A (en) 1989-10-27 1992-08-11 Kopin Corporation High temperature Schottky barrier bypass diodes
JPH0548134A (ja) 1991-08-07 1993-02-26 Mitsubishi Electric Corp 太陽電池とその製造方法
JPH0964397A (ja) * 1995-08-29 1997-03-07 Canon Inc 太陽電池および太陽電池モジュール
US5853497A (en) * 1996-12-12 1998-12-29 Hughes Electronics Corporation High efficiency multi-junction solar cells
US6248948B1 (en) * 1998-05-15 2001-06-19 Canon Kabushiki Kaisha Solar cell module and method of producing the same
AU4193899A (en) 1998-05-28 1999-12-13 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode
US6278054B1 (en) * 1998-05-28 2001-08-21 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode
WO1999062125A1 (en) 1998-05-28 1999-12-02 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode
JP3754841B2 (ja) * 1998-06-11 2006-03-15 キヤノン株式会社 光起電力素子およびその製造方法
US6103970A (en) 1998-08-20 2000-08-15 Tecstar Power Systems, Inc. Solar cell having a front-mounted bypass diode
GB9901513D0 (en) * 1999-01-25 1999-03-17 Eev Ltd Solar cell arrangements
JP3657143B2 (ja) * 1999-04-27 2005-06-08 シャープ株式会社 太陽電池及びその製造方法
DE19921545A1 (de) * 1999-05-11 2000-11-23 Angew Solarenergie Ase Gmbh Solarzelle sowie Verfahren zur Herstellung einer solchen
US6635507B1 (en) * 1999-07-14 2003-10-21 Hughes Electronics Corporation Monolithic bypass-diode and solar-cell string assembly
US7339109B2 (en) * 2000-06-20 2008-03-04 Emcore Corporation Apparatus and method for optimizing the efficiency of germanium junctions in multi-junction solar cells
US6680432B2 (en) * 2001-10-24 2004-01-20 Emcore Corporation Apparatus and method for optimizing the efficiency of a bypass diode in multijunction solar cells
US6864414B2 (en) * 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells

Also Published As

Publication number Publication date
JP2005514763A (ja) 2005-05-19
AU2002365270A8 (en) 2003-07-09
US8263855B2 (en) 2012-09-11
EP2017894A3 (de) 2014-08-13
EP1440480A2 (de) 2004-07-28
US6680432B2 (en) 2004-01-20
EP2017894A2 (de) 2009-01-21
AU2002365270A1 (en) 2003-07-09
EP1440480B1 (de) 2008-10-08
US20040149331A1 (en) 2004-08-05
DE10297371T5 (de) 2005-05-19
ATE410789T1 (de) 2008-10-15
JP4119844B2 (ja) 2008-07-16
US20100224239A1 (en) 2010-09-09
US20030075215A1 (en) 2003-04-24

Similar Documents

Publication Publication Date Title
DE60229279D1 (de) Integrierte umleitungsdiode in solarzellen und herstellungsverfahren
JP5333814B2 (ja) パワー半導体モジュール、インバータ装置、及びインバータ一体型モータ
JP5052091B2 (ja) 半導体装置
KR100994185B1 (ko) 반도체 장치
EP1055961A3 (de) Optische Vorrichtung basierend auf eine elektrochemische Arbeitweise
DE502005003599D1 (de) Vakuumschalter mit grosser stromtragfähigkeit
WO2003028110A1 (fr) Semi-conducteur
GB2241111A (en) Transistors integrated with diodes
EP1139280A3 (de) Integrierte Halbleiterschaltung und kontaktlose elektronische Vorrichtung
DE50015580D1 (de) Halbleitersicherung für elektrische verbraucher
KR980006243A (ko) 반도체 장치 및 그 제조방법
CA2208999A1 (en) Semiconductor laser device
US20220278461A1 (en) Solar antenna array fabrication
TW253992B (en) Dielectric as load resistor in 4T SRAM
JPS5458378A (en) Semiconductor device and its usage
JP2000269354A5 (de)
CN106057902A (zh) 一种高性能mosfet及其制造方法
JP6715736B2 (ja) 半導体装置および電力変換装置
JP6891739B2 (ja) 半導体装置、電力変換装置および半導体装置の製造方法
JP3918209B2 (ja) 絶縁ゲート型バイポーラトランジスタ及びその製造方法
JPS61199672A (ja) 光起電力装置
JPS623987B2 (de)
SE0001860D0 (sv) A semiconductor device
SE9803490D0 (sv) An electric switching device and a method for performing electric disconnection of a load
JPH077955A (ja) 整流回路

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: EMCORE SOLAR POWER, INC., ALBUQUERQUE, N. MEX., US

8364 No opposition during term of opposition