CN105489700B - 一种带集成二极管的太阳电池的制备方法 - Google Patents

一种带集成二极管的太阳电池的制备方法 Download PDF

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CN105489700B
CN105489700B CN201510883143.6A CN201510883143A CN105489700B CN 105489700 B CN105489700 B CN 105489700B CN 201510883143 A CN201510883143 A CN 201510883143A CN 105489700 B CN105489700 B CN 105489700B
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梁存宝
杜永超
铁剑锐
王鑫
孙希鹏
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TIANJIN HENGDIAN SPACE POWER SOURCE Co Ltd
CETC 18 Research Institute
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Abstract

本发明涉及太阳能电池领域，主要公开了一种带集成二极管的太阳电池的制备方法。该带集成二极管的太阳电池的制备方法主要包括以下步骤：P型Ge衬底的外延生长，第一次光刻腐蚀，第二次光刻腐蚀，制备边缘保护层以及蒸镀电极层。本发明的有益效果是：通过外延生长制备子电池的工艺便于操作且生长子电池的质量良好；通过第一次光刻腐蚀和第二次光刻腐蚀可精确形成旁路二极管和隔离槽两个区域；通过制备边缘保护层避免所述旁路二极管中PN结的漏电，优化了所述PN结的质量；最后通过热蒸镀的方法制备更为均匀的电极层，降低了内电阻，减少了能量损失。总之，该制备方法操作简单，且通过该方法可制备出正向压降低、开启电压小的带集成二极管的太阳电池。

Description

一种带集成二极管的太阳电池的制备方法
技术领域
本发明涉及太阳电池制备领域，尤其是涉及一种带集成二极管的太阳电池的制备方法。
背景技术
随着清洁能源越来越受到人们的青睐，所以作为清洁能源的首选太阳电池发展速度也越来越快。由于太阳电池在工作过程中因单体电池失效会出现电池阵帆板热板效应，而使太阳电池遭到破坏。为了防止该现象的出现，通常会在单体电池的正负极间并联一个旁路二极管，这样就可以起到分流作用，从而避开有问题的单体电池。
在旁路二极管太阳电池的制备过程中，由于集成式的旁路二极管太阳电池能够简化生产制作的工艺流程，因此太阳电池与旁路二极管相结合的需求会越来越强烈。但是，传统的集成式旁路二极管均采用多节结构设计，使得旁路二极管具有开启电压高以及串联电阻大的缺点。此外，传统集成式旁路二极管并未对其边缘结进行保护，所以会引起边缘反向漏电情况的发生，究其原因主要在于传统的制备工艺存在不合理之处。
由此可见，如何研究出一种带集成二极管的太阳电池的制备方法，能够很方便的制造出具有较低开启电压和较低串联电阻的旁路二极管并能够保护旁路二极管边缘结的带集成二极管的太阳电池，是目前本领域技术人员亟待解决的问题。
发明内容
为了解决上述问题，本发明提供了一种能够很方便的制备降低旁路二极管开启电压和串联电阻并且对旁路二极管边缘结具有保护作用的带集成二极管的太阳电池的方法。
本发明一种带集成二极管的太阳电池的制备方法，包括以下步骤：
(a)P型Ge衬底的外延生长，其步骤为：在所述P型Ge衬底上依次外延生长Ge子电池、GaAs子电池和GaInP子电池；
(b)第一次光刻腐蚀，其步骤为：先通过光刻版确定隔离槽和旁路二极管的待腐蚀图案并进行光刻，再通过湿法腐蚀除去所述待腐蚀图案内的GaInP子电池和GaAs子电池；
(c)第二次光刻腐蚀，其步骤为：先通过光刻版确定所述隔离槽的待腐蚀图形，再采用湿法腐蚀除去所述待腐蚀形状内的Ge子电池；
(d)制备边缘保护层：在所述旁路二极管的所述Ge子电池边缘制作边缘保护层；
(e)蒸镀电极层，其步骤为：在电池主体中的GaInP子电池以及所述旁路二极管中的Ge子电池上面蒸镀上电极层，在所述P型Ge衬底的下面蒸镀下电极层。
进一步地，所述Ge子电池依次包括所述P型Ge衬底、N型重掺杂的Ge外延层以及N型重掺杂的GaInP外延层。
进一步地，所述光刻方式的步骤为涂光刻胶1500-2500r/m，85-95℃下干燥10-20min；再进行曝光，时间为15-25s；显影采用NaOH溶液，时间为15-60s。
进一步地，所述第一次光刻腐蚀和第二次光刻腐蚀中光刻方式的坚膜温度为110-120℃，时间为8-12min。
进一步地，所述第一次光刻腐蚀的腐蚀液：腐蚀液F1为HCl溶液，腐蚀液F2为EDTA与H2O2和水的混合液，腐蚀方式为依次用所述腐蚀液F2腐蚀25-35s，所述腐蚀液F1腐蚀55-65s，所述腐蚀液F2腐蚀35-45s，所述腐蚀液F1腐蚀55-65s，所述腐蚀液F2腐蚀25-35s，所述腐蚀液F1腐蚀55-65s。
进一步地，所述第二次光刻腐蚀的腐蚀液F3为HF、H2O2和CH3COOH的混合溶液，腐蚀时间为85-95s。
进一步地，所述边缘保护层的制备方法为先旋涂聚酰亚胺胶，再通过光刻确定待除去的所述聚酰亚胺胶的图形，最后用酒精于65-75℃下处理55-65s以除去多余的所述聚酰亚胺胶。
进一步地，所述聚酰亚胺胶的旋涂转速为2500-3500r/m，之后在100-120℃下进行干燥，干燥时间为15-25min。
进一步地，所述上电极层为在低真空条件下依次蒸镀Au、Ag和Au的复合薄膜，所述复合薄膜的厚度为3.9-4.1μm。
进一步地，所述下电极层为在低真空条件下依次蒸镀Au、Ge、Ag和Au的复合薄膜层，所述复合薄膜层的厚度为3.9-4.1μm。
本发明一种带集成二极管的太阳能电池，与现有技术相比具有以下优点：
第一，该带集成二极管的太阳电池的制备方法中通过外延生长制备Ge子电池、GaAs子电池和GaInP子电池，该方法便于操作且生长以上所述子电池质量十分良好；再通过所述第一次光刻腐蚀和所述第二次光刻腐蚀可精确形成所述旁路二极管和所述隔离槽两个区域；再通过制备边缘保护层避免所述旁路二极管中PN结的漏电，优化了所述PN结的质量；最后通过热蒸镀的方法制备更为均匀的电极层，降低了内电阻，减少了能量损失。该制备方法操作简单，且通过该方法可制备出正向压降低、所述旁路二极管开启电压小的高质量所述带集成二极管的太阳电池。
第二，该带集成二极管的太阳电池的制备方法中通过所述P型Ge衬底和所述N型重掺杂的Ge外延层和N型重掺杂的GaInP外延层构成所述Ge子电池的PN结，之所以采用该结构是为了与所述GaAs子电池和的能级更为匹配。
第三，该带集成二极管的太阳电池的制备方法中所述光刻方式的步骤为涂光刻胶1500-2500r/m，85-95℃下干燥10-20min；再进行曝光，时间为15-25s；显影采用NaOH溶液，时间为15-60s。之所以采用这些工艺条件是为了更为精确的使待腐蚀的所述Ge子电池、所述GaAs子电池以及所述GaInP子电池形成所述带集成二极管的太阳电池所需的图案。
附图说明
图1为本发明中带集成二极管的太阳电池的制备方法的流程图；
图2为本发明中带集成二极管的太阳电池的结构示意图。
图中的标号分别为：2-A-电池主体，2-B-旁路二极管，2-C-隔离槽，201-P型Ge衬底，202-Ge外延层，203-GaInP外延层，204-GaAs子电池，205-GaInP子电池，206-上电极层，207-边缘保护层，208-下电极层。
具体实施方式
下面结合附图对本发明的具体实施例做详细说明。
如图1-2所示，一种带集成二极管的太阳电池的制备方法，包括以下步骤：
(a)P型Ge衬底201的外延生长，其步骤为：在所述P型Ge衬底201上依次外延生长Ge子电池、GaAs子电池204和GaInP子电池205；
(b)第一次光刻腐蚀，其步骤为：先通过光刻版确定隔离槽2-C和旁路二极管2-B的待腐蚀图案并进行光刻，再通过湿法腐蚀除去所述待腐蚀图案内的GaInP子电池205和GaAs子电池204；
(c)第二次光刻腐蚀，其步骤为：先通过光刻版确定所述隔离槽2-C的待腐蚀图形，再采用湿法腐蚀除去所述待腐蚀形状内的Ge子电池；
(d)制备边缘保护层207：在所述旁路二极管2-B的所述Ge子电池边缘制作边缘保护层207；
(e)蒸镀电极层，其步骤为：在电池主体2-A中的GaInP子电池205以及所述旁路二极管2-B中的Ge子电池上面蒸镀上电极层206，在所述P型Ge衬底201的下面蒸镀下电极层208。
执行完上述步骤以后，与现有技术中带集成二极管的太阳电池制备方法相同，还需要在带集成二极管的太阳电池的上表面蒸镀减反射膜以提高太阳光的透过率，从而提高光电转换效率；最后再进行划片工序。
通过在所述P型Ge衬底201上外延生长制备Ge子电池、GaAs子电池204和GaInP子电池205，该制备所述子电池的方法便于操作且生长以上所述子电池质量非常良好。通过所述第一次光刻腐蚀和所述第二次光刻腐蚀可精确形成所述旁路二极管2-B和所述隔离槽2-C两个区域。通过制备边缘保护层207避免所述旁路二极管2-B中PN结的漏电，优化了所述PN结的质量。通过热蒸镀的方法制备更为均匀的电极层，降低了内电阻，从而降低了正向压降。综上所述，该制备方法操作简单，且通过该方法可制备出正向压降低、所述旁路二极管2-B开启电压小的高质量所述带集成二极管的太阳电池。由于所述内电阻的减小，使所述带集成二极管太阳电池的I-V曲线特性得以提高，间接的提高了所述集成二极管太阳电池的效率；此外，还降低了所述旁路二极管2-B的热耗，提高了二极管特性。
所述Ge子电池依次包括所述P型Ge衬底201、N型重掺杂的Ge外延层202以及N型重掺杂的GaInP外延层203。该设计是为了通过所述P型Ge衬底201和所述N型重掺杂的Ge外延层202和N型重掺杂的GaInP外延层203构成所述Ge子电池的PN结，之所以采用该结构是为了与所述GaAs子电池204的能级更为匹配。
所述光刻方式的步骤为涂光刻胶1500-2500r/m，85-95℃下干燥10-20min；再进行曝光，时间为15-25s；显影采用NaOH溶液，时间为15-60s。之所以采用这些工艺条件是为了更为精确的使待腐蚀的所述Ge子电池、所述GaAs子电池204以及所述GaInP子电池205形成所述带集成二极管的太阳电池所需的图案。
为了使光刻腐蚀后所得的薄膜较为平整良好，所以所述第一次光刻腐蚀和第二次光刻腐蚀中光刻方式的坚膜温度为110-120℃，时间为8-12min。
为了使光刻腐蚀更为彻底，所以本发明配有一套专用的腐蚀液和腐蚀工艺。所述第一次光刻腐蚀的腐蚀液：腐蚀液F1为HCl溶液，腐蚀液F2为EDTA与H2O2和水的混合液，腐蚀方式为依次用所述腐蚀液F2腐蚀25-35s，所述腐蚀液F1腐蚀55-65s，所述腐蚀液F2腐蚀35-45s，所述腐蚀液F1腐蚀55-65s，所述腐蚀液F2腐蚀25-35s，所述腐蚀液F1腐蚀55-65s。所述第二次光刻腐蚀的腐蚀液F3为HF、H2O2和CH3COOH的混合溶液，腐蚀时间为85-95s。
为了使所述边缘保护层207保护效果更佳，所以将所述边缘保护层207的制备方法设计为：先旋涂聚酰亚胺胶，再通过光刻确定待除去的所述聚酰亚胺胶的图形，最后用酒精于65-75℃下处理55-65s以除去多余的所述聚酰亚胺胶。
所述聚酰亚胺胶的旋涂转速为2500-3500r/m，之后在100-120℃下进行干燥，干燥时间为15-25min。
为了使所述电极层与所述带集成二极管的太阳电池的本体之间的接触电阻更小，所以将所述上电极层206和所述下电极层208设计为在低真空条件下蒸镀。为了使所述上电极层206的导电率更高所以采用Au、Ag和Au的复合薄膜，所述上电极层206的复合薄膜的厚度为3.9-4.1μm。同样为了使所述下电极层208的导电率更高，所以采用依次蒸镀Au、Ge、Ag和Au的复合薄膜层，所述下电极层208的复合薄膜层的厚度为3.9-4.1μm。
以上对本发明的一个实施例进行了详细说明，但所述内容仅为本发明的较佳实施例，不能被认为用于限定本发明的实施范围。凡依本发明申请范围所作的均等变化与改进等，均应仍归属于本发明的专利涵盖范围之内。

Claims (10)

1.一种带集成二极管的太阳电池的制备方法，其特征在于，包括以下步骤：
(a)P型Ge衬底(201)的外延生长，其步骤为：在所述P型Ge衬底(201)上依次外延生长Ge子电池、GaAs子电池(204)和GaInP子电池(205)；
(b)第一次光刻腐蚀，其步骤为：先通过光刻版确定隔离槽和旁路二极管的待腐蚀图案并进行光刻，再通过湿法腐蚀除去所述待腐蚀图案内的GaInP子电池(205)和GaAs子电池(204)；
(c)第二次光刻腐蚀，其步骤为：先通过光刻版确定所述隔离槽的待腐蚀图形，再采用湿法腐蚀除去所述待腐蚀形状内的Ge子电池；
(d)制备边缘保护层(207)：在所述旁路二极管的所述Ge子电池边缘制作边缘保护层(207)；
(e)蒸镀电极层，其步骤为：在电池主体中的GaInP子电池(205)以及所述旁路二极管中的Ge子电池上面蒸镀上电极层(206)，在所述P型Ge衬底(201)的下面蒸镀下电极层(208)。
2.根据权利要求1所述的带集成二极管的太阳电池的制备方法，其特征在于：所述Ge子电池依次包括所述P型Ge衬底(201)、N型重掺杂的Ge外延层(202)以及N型重掺杂的GaInP外延层(203)。
3.根据权利要求1所述的带集成二极管的太阳电池的制备方法，其特征在于：所述光刻方式的步骤为涂光刻胶1500-2500r/m，85-95℃下干燥10-20min；再进行曝光，时间为15-25s；显影采用NaOH溶液，时间为15-60s。
4.根据权利要求3所述的带集成二极管的太阳电池的制备方法，其特征在于：所述第一次光刻腐蚀和第二次光刻腐蚀中光刻方式的坚膜温度为110-120℃，时间为8-12min。
5.根据权利要求1所述的带集成二极管的太阳电池的制备方法，其特征在于：所述第一次光刻腐蚀的腐蚀液：腐蚀液F1为HCl溶液，腐蚀液F2为EDTA与H2O2和水的混合液，腐蚀方式为依次用所述腐蚀液F2腐蚀25-35s，所述腐蚀液F1腐蚀55-65s，所述腐蚀液F2腐蚀35-45s，所述腐蚀液F1腐蚀55-65s，所述腐蚀液F2腐蚀25-35s，所述腐蚀液F1腐蚀55-65s。
6.根据权利要求1所述的带集成二极管的太阳电池的制备方法，其特征在于：所述第二次光刻腐蚀的腐蚀液F3为HF、H2O2和CH3COOH的混合溶液，腐蚀时间为85-95s。
7.根据权利要求1所述的带集成二极管的太阳电池的制备方法，其特征在于：所述边缘保护层(207)的制备方法为先旋涂聚酰亚胺胶，再通过光刻确定待除去的所述聚酰亚胺胶的图形，最后用酒精于65-75℃下处理55-65s以除去多余的所述聚酰亚胺胶。
8.根据权利要求7所述的带集成二极管的太阳电池的制备方法，其特征在于：所述聚酰亚胺胶的旋涂转速为2500-3500r/m，之后在100-120℃下进行干燥，干燥时间为15-25min。
9.根据权利要求1所述的带集成二极管的太阳电池的制备方法，其特征在于：所述上电极层(206)为在低真空条件下依次蒸镀Au、Ag和Au的复合薄膜，所述复合薄膜的厚度为3.9-4.1μm。
10.根据权利要求1所述的带集成二极管的太阳电池的制备方法，其特征在于：所述下电极层(208)为在低真空条件下依次蒸镀Au、Ge、Ag和Au的复合薄膜层，所述复合薄膜层的厚度为3.9-4.1μm。
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