DE60219580D1 - Verfahren und Vorrichtung zur Plasmabearbeitung - Google Patents

Verfahren und Vorrichtung zur Plasmabearbeitung

Info

Publication number
DE60219580D1
DE60219580D1 DE60219580T DE60219580T DE60219580D1 DE 60219580 D1 DE60219580 D1 DE 60219580D1 DE 60219580 T DE60219580 T DE 60219580T DE 60219580 T DE60219580 T DE 60219580T DE 60219580 D1 DE60219580 D1 DE 60219580D1
Authority
DE
Germany
Prior art keywords
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60219580T
Other languages
English (en)
Other versions
DE60219580T2 (de
Inventor
Hitoshi Murayama
Shigenori Ueda
Shinji Tsuchida
Makoto Aoki
Tomohito Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002365144A external-priority patent/JP4497811B2/ja
Priority claimed from JP2002365145A external-priority patent/JP2003268557A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE60219580D1 publication Critical patent/DE60219580D1/de
Publication of DE60219580T2 publication Critical patent/DE60219580T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
DE60219580T 2001-12-20 2002-12-19 Verfahren und Vorrichtung zur Plasmabearbeitung Expired - Lifetime DE60219580T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2001388047 2001-12-20
JP2001388048 2001-12-20
JP2001388048 2001-12-20
JP2001388047 2001-12-20
JP2002365145 2002-12-17
JP2002365144A JP4497811B2 (ja) 2001-12-20 2002-12-17 プラズマ処理方法
JP2002365145A JP2003268557A (ja) 2001-12-20 2002-12-17 プラズマ処理方法およびプラズマ処理装置
JP2002365144 2002-12-17

Publications (2)

Publication Number Publication Date
DE60219580D1 true DE60219580D1 (de) 2007-05-31
DE60219580T2 DE60219580T2 (de) 2007-12-27

Family

ID=27482745

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60219580T Expired - Lifetime DE60219580T2 (de) 2001-12-20 2002-12-19 Verfahren und Vorrichtung zur Plasmabearbeitung

Country Status (3)

Country Link
US (1) US20030196601A1 (de)
EP (1) EP1321963B1 (de)
DE (1) DE60219580T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4298401B2 (ja) * 2003-06-27 2009-07-22 キヤノン株式会社 堆積膜形成装置、及び堆積膜形成方法
US20080179948A1 (en) * 2005-10-31 2008-07-31 Mks Instruments, Inc. Radio frequency power delivery system
TWI425767B (zh) * 2005-10-31 2014-02-01 Mks Instr Inc 無線電頻率電力傳送系統
JP5319150B2 (ja) * 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
CN102647845B (zh) * 2011-02-22 2016-04-20 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体点火的装置、方法和半导体设备
DE102011076404B4 (de) 2011-05-24 2014-06-26 TRUMPF Hüttinger GmbH + Co. KG Verfahren zur Impedanzanpassung der Ausgangsimpedanz einer Hochfrequenzleistungsversorgungsanordnung an die Impedanz einer Plasmalast und Hochfrequenzleistungsversorgungsanordnung
DE102012200702B3 (de) * 2012-01-19 2013-06-27 Hüttinger Elektronik Gmbh + Co. Kg Verfahren zum Phasenabgleich mehrerer HF-Leistungserzeugungseinheiten eines HF-Leistungsversorgungssystems und HF-Leistungsversorgungssystem
US10319872B2 (en) * 2012-05-10 2019-06-11 International Business Machines Corporation Cost-efficient high power PECVD deposition for solar cells
CN105719931B (zh) * 2012-11-30 2017-09-08 神华集团有限责任公司 一种粉体或颗粒等离子体处理装置
CN104754851B (zh) * 2013-12-31 2017-10-20 北京北方华创微电子装备有限公司 多频匹配器及等离子体装置
CN105810547B (zh) * 2014-12-30 2017-11-03 中微半导体设备(上海)有限公司 等离子体处理装置的阻抗匹配方法
JP7412268B2 (ja) * 2020-05-11 2024-01-12 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US160124A (en) * 1875-02-23 Improvement in spindle-bearings and their lubrication
US4557819A (en) * 1984-07-20 1985-12-10 Varian Associates, Inc. System for igniting and controlling a wafer processing plasma
US5288971A (en) * 1991-08-09 1994-02-22 Advanced Energy Industries, Inc. System for igniting a plasma for thin film processing
JP3236111B2 (ja) * 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
US5407524A (en) * 1993-08-13 1995-04-18 Lsi Logic Corporation End-point detection in plasma etching by monitoring radio frequency matching network
US5815047A (en) * 1993-10-29 1998-09-29 Applied Materials, Inc. Fast transition RF impedance matching network for plasma reactor ignition
JP3513206B2 (ja) * 1994-03-22 2004-03-31 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
JP3387616B2 (ja) * 1994-04-18 2003-03-17 キヤノン株式会社 プラズマ処理装置
US5556549A (en) * 1994-05-02 1996-09-17 Lsi Logic Corporation Power control and delivery in plasma processing equipment
US5474648A (en) * 1994-07-29 1995-12-12 Lsi Logic Corporation Uniform and repeatable plasma processing
JPH0896992A (ja) * 1994-09-22 1996-04-12 Nissin Electric Co Ltd プラズマ処理装置の運転方法
JPH09260096A (ja) * 1996-03-15 1997-10-03 Hitachi Ltd インピーダンス整合方法および装置ならびに半導体製造装置
JP2929284B2 (ja) * 1997-09-10 1999-08-03 株式会社アドテック 高周波プラズマ処理装置のためのインピーダンス整合及び電力制御システム
JP3745095B2 (ja) * 1997-09-24 2006-02-15 キヤノン株式会社 堆積膜形成装置および堆積膜形成方法
US6313584B1 (en) * 1998-09-17 2001-11-06 Tokyo Electron Limited Electrical impedance matching system and method
TW507256B (en) * 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
JP2002030447A (ja) * 2000-07-11 2002-01-31 Canon Inc プラズマ処理方法及びプラズマ処理装置
JP4109861B2 (ja) * 2000-12-12 2008-07-02 キヤノン株式会社 真空処理方法
JP4035298B2 (ja) * 2001-07-18 2008-01-16 キヤノン株式会社 プラズマ処理方法、半導体装置の製造方法および半導体装置
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor

Also Published As

Publication number Publication date
EP1321963B1 (de) 2007-04-18
US20030196601A1 (en) 2003-10-23
EP1321963A1 (de) 2003-06-25
DE60219580T2 (de) 2007-12-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition