DE60208328D1 - Fingerabdrucksensor - Google Patents

Fingerabdrucksensor

Info

Publication number
DE60208328D1
DE60208328D1 DE60208328T DE60208328T DE60208328D1 DE 60208328 D1 DE60208328 D1 DE 60208328D1 DE 60208328 T DE60208328 T DE 60208328T DE 60208328 T DE60208328 T DE 60208328T DE 60208328 D1 DE60208328 D1 DE 60208328D1
Authority
DE
Germany
Prior art keywords
fingerprint sensor
fingerprint
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60208328T
Other languages
English (en)
Other versions
DE60208328T2 (de
Inventor
Akira Okada
Hideharu Sakoda
Michio Hayakawa
Fumihiko Taniguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE60208328D1 publication Critical patent/DE60208328D1/de
Application granted granted Critical
Publication of DE60208328T2 publication Critical patent/DE60208328T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
DE60208328T 2002-02-20 2002-10-30 Fingerabdrucksensor Expired - Lifetime DE60208328T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002043708 2002-02-20
JP2002043708A JP3766034B2 (ja) 2002-02-20 2002-02-20 指紋センサ装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE60208328D1 true DE60208328D1 (de) 2006-02-02
DE60208328T2 DE60208328T2 (de) 2006-07-20

Family

ID=27655269

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60208328T Expired - Lifetime DE60208328T2 (de) 2002-02-20 2002-10-30 Fingerabdrucksensor

Country Status (7)

Country Link
US (1) US7192798B2 (de)
EP (1) EP1339009B1 (de)
JP (1) JP3766034B2 (de)
KR (2) KR100833554B1 (de)
CN (1) CN1202566C (de)
DE (1) DE60208328T2 (de)
TW (1) TWI222034B (de)

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JP3614840B2 (ja) * 2002-11-28 2005-01-26 沖電気工業株式会社 半導体装置
US7554180B2 (en) * 2002-12-09 2009-06-30 Unisem (Mauritius) Holdings Limited Package having exposed integrated circuit device
JP4241457B2 (ja) * 2003-06-26 2009-03-18 富士ゼロックス株式会社 レンズ付き発光素子の製造方法
US20050136851A1 (en) 2003-12-19 2005-06-23 Fujitsu Limited Information processing unit
JP2005346271A (ja) * 2004-06-01 2005-12-15 Fujitsu Ltd 指紋センサーパッケージ
CN103559477B (zh) * 2004-11-03 2017-06-13 笔一公司 用于触针或钢笔的手指引导装置
JP4731191B2 (ja) 2005-03-28 2011-07-20 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
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WO2007099594A1 (ja) * 2006-02-28 2007-09-07 Fujitsu Limited 指紋読み取りセンサユニット
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JP4757071B2 (ja) 2006-03-27 2011-08-24 富士通株式会社 指紋認証装置および情報処理装置
US7632698B2 (en) 2006-05-16 2009-12-15 Freescale Semiconductor, Inc. Integrated circuit encapsulation and method therefor
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US7566966B2 (en) * 2007-09-05 2009-07-28 Stats Chippac Ltd. Integrated circuit package-on-package system with anti-mold flash feature
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JP5916637B2 (ja) 2013-01-11 2016-05-11 日立オートモティブシステムズ株式会社 流量センサおよびその製造方法
KR101298636B1 (ko) 2013-07-05 2013-08-20 (주)드림텍 지문인식센서면과 코팅층의 밀착력 및 차폐 강화를 위한 지문인식 홈키 제조방법 및 지문인식 홈키 구조
US10296773B2 (en) 2013-09-09 2019-05-21 Apple Inc. Capacitive sensing array having electrical isolation
US9697409B2 (en) * 2013-09-10 2017-07-04 Apple Inc. Biometric sensor stack structure
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CN104051367A (zh) 2014-07-01 2014-09-17 苏州晶方半导体科技股份有限公司 指纹识别芯片封装结构和封装方法
CN104538379A (zh) * 2014-12-31 2015-04-22 华天科技（西安）有限公司 一种基于局部塑封工艺的指纹设计封装结构及其制备方法
CN104851853A (zh) * 2015-05-19 2015-08-19 苏州晶方半导体科技股份有限公司 指纹识别芯片的封装结构及封装方法
CN106767628B (zh) 2015-12-18 2019-04-19 深圳市汇顶科技股份有限公司 一种指纹传感器保护层的厚度检测方法及系统
JP6086166B1 (ja) * 2016-02-05 2017-03-01 第一精工株式会社 樹脂封止用金型、樹脂封止装置及び樹脂封止方法
TWI575620B (zh) * 2016-03-10 2017-03-21 南茂科技股份有限公司 指紋辨識晶片封裝結構的製作方法及製作設備
TWI614695B (zh) * 2017-07-03 2018-02-11 敦泰電子有限公司 具指紋辨識之高屏佔比顯示裝置
CN110077657B (zh) * 2018-01-26 2021-03-09 致伸科技股份有限公司 指纹辨识模块包装方法
CN111886623A (zh) * 2018-05-01 2020-11-03 株式会社村田制作所 电子设备以及搭载了该电子设备的指纹认证装置
CN109037169B (zh) * 2018-07-06 2020-10-23 昆山丘钛微电子科技有限公司 封装模具、封装结构、封装方法和摄像头模组
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Also Published As

Publication number Publication date
KR20070121623A (ko) 2007-12-27
TW200303491A (en) 2003-09-01
CN1440060A (zh) 2003-09-03
KR100833554B1 (ko) 2008-05-29
US20030156743A1 (en) 2003-08-21
KR20030069782A (ko) 2003-08-27
US7192798B2 (en) 2007-03-20
EP1339009B1 (de) 2005-12-28
DE60208328T2 (de) 2006-07-20
KR100805291B1 (ko) 2008-02-20
TWI222034B (en) 2004-10-11
JP2003235830A (ja) 2003-08-26
EP1339009A2 (de) 2003-08-27
CN1202566C (zh) 2005-05-18
JP3766034B2 (ja) 2006-04-12
EP1339009A3 (de) 2003-10-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE