DE60202208D1 - Leistungskontakte zum aufschlag hoher ströme pro anschluss in siliziumtechnologie - Google Patents

Leistungskontakte zum aufschlag hoher ströme pro anschluss in siliziumtechnologie

Info

Publication number
DE60202208D1
DE60202208D1 DE2002602208 DE60202208T DE60202208D1 DE 60202208 D1 DE60202208 D1 DE 60202208D1 DE 2002602208 DE2002602208 DE 2002602208 DE 60202208 T DE60202208 T DE 60202208T DE 60202208 D1 DE60202208 D1 DE 60202208D1
Authority
DE
Germany
Prior art keywords
current supply
high current
silicon technology
per connection
supply per
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2002602208
Other languages
English (en)
Other versions
DE60202208T2 (de
Inventor
Gerald Friese
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of DE60202208D1 publication Critical patent/DE60202208D1/de
Application granted granted Critical
Publication of DE60202208T2 publication Critical patent/DE60202208T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/05073—Single internal layer
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05181—Tantalum [Ta] as principal constituent
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0554—External layer
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858—Bonding techniques
    • H01L2224/85801—Soldering or alloying
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01014—Silicon [Si]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01073—Tantalum [Ta]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/01082—Lead [Pb]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0495—5th Group
    • H01L2924/04953—TaN
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1433—Application-specific integrated circuit [ASIC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
DE60202208T 2001-06-27 2002-06-17 Leistungskontakte zum aufschlag hoher ströme pro anschluss in siliziumtechnologie Expired - Lifetime DE60202208T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US893160 2001-06-27
US09/893,160 US20020016070A1 (en) 2000-04-05 2001-06-27 Power pads for application of high current per bond pad in silicon technology
PCT/US2002/019095 WO2003003458A2 (en) 2001-06-27 2002-06-17 Power pads for application of high current per bond pad in silicon technology

Publications (2)

Publication Number Publication Date
DE60202208D1 true DE60202208D1 (de) 2005-01-13
DE60202208T2 DE60202208T2 (de) 2005-12-15

Family

ID=25401118

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60202208T Expired - Lifetime DE60202208T2 (de) 2001-06-27 2002-06-17 Leistungskontakte zum aufschlag hoher ströme pro anschluss in siliziumtechnologie

Country Status (5)

Country Link
US (1) US20020016070A1 (de)
EP (1) EP1399966B1 (de)
DE (1) DE60202208T2 (de)
TW (1) TW582097B (de)
WO (1) WO2003003458A2 (de)

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US6699665B1 (en) 2000-11-08 2004-03-02 Surface Logix, Inc. Multiple array system for integrating bioarrays
JP2002313835A (ja) * 2001-04-09 2002-10-25 Oki Electric Ind Co Ltd ボンディングパッド、半導体装置及びワイヤボンディング方法
US6921979B2 (en) * 2002-03-13 2005-07-26 Freescale Semiconductor, Inc. Semiconductor device having a bond pad and method therefor
US6844631B2 (en) * 2002-03-13 2005-01-18 Freescale Semiconductor, Inc. Semiconductor device having a bond pad and method therefor
TW531776B (en) * 2002-03-21 2003-05-11 Nanya Technology Corp Metal pad structure suitable for connection pad and inspection pad
DE10337569B4 (de) * 2003-08-14 2008-12-11 Infineon Technologies Ag Integrierte Anschlussanordnung und Herstellungsverfahren
US20050269677A1 (en) * 2004-05-28 2005-12-08 Martin Standing Preparation of front contact for surface mounting
US20070215997A1 (en) * 2006-03-17 2007-09-20 Martin Standing Chip-scale package
JP2007266083A (ja) * 2006-03-27 2007-10-11 Renesas Technology Corp 半導体装置およびその製造方法
US20080191367A1 (en) * 2007-02-08 2008-08-14 Stats Chippac, Ltd. Semiconductor package wire bonding
US20080237854A1 (en) * 2007-03-26 2008-10-02 Ping-Chang Wu Method for forming contact pads
DE102008043361A1 (de) * 2008-10-31 2010-05-06 Micro Systems Engineering Gmbh Anschlussdraht und Verfahren zur Herstellung eines solchen
JP5557100B2 (ja) * 2010-07-23 2014-07-23 株式会社ジェイテクト 電動モータ駆動用の半導体素子
TWI416233B (zh) * 2010-12-24 2013-11-21 Au Optronics Corp 顯示面板
US9646899B2 (en) 2012-09-13 2017-05-09 Micron Technology, Inc. Interconnect assemblies with probed bond pads
US9269678B2 (en) * 2012-10-25 2016-02-23 United Microelectronics Corp. Bond pad structure and method of manufacturing the same
US9892192B2 (en) 2014-09-30 2018-02-13 International Business Machines Corporation Information handling system and computer program product for dynamically assigning question priority based on question extraction and domain dictionary
US20160140216A1 (en) 2014-11-19 2016-05-19 International Business Machines Corporation Adjusting Fact-Based Answers to Consider Outcomes
CN106816394A (zh) * 2015-11-27 2017-06-09 中芯国际集成电路制造(上海)有限公司 半导体晶圆测试及凸块的制造方法、半导体器件及电子装置
CN112582277A (zh) * 2020-12-08 2021-03-30 武汉新芯集成电路制造有限公司 半导体器件的加工方法及半导体器件

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US4761386A (en) * 1984-10-22 1988-08-02 National Semiconductor Corporation Method of fabricating conductive non-metallic self-passivating non-corrodable IC bonding pads
JPH05291343A (ja) * 1992-04-10 1993-11-05 Miyagi Oki Denki Kk 半導体装置
US5656945A (en) * 1993-05-12 1997-08-12 Tribotech Apparatus for testing a nonpackaged die
US5785236A (en) * 1995-11-29 1998-07-28 Advanced Micro Devices, Inc. Advanced copper interconnect system that is compatible with existing IC wire bonding technology
US5877557A (en) * 1996-04-01 1999-03-02 Raytheon Company Low temperature aluminum nitride
US5783868A (en) * 1996-09-20 1998-07-21 Integrated Device Technology, Inc. Extended bond pads with a plurality of perforations
US6107122A (en) * 1997-08-04 2000-08-22 Micron Technology, Inc. Direct die contact (DDC) semiconductor package
US5936876A (en) * 1997-12-03 1999-08-10 Lsi Logic Corporation Semiconductor integrated circuit core probing for failure analysis
US6140665A (en) * 1997-12-22 2000-10-31 Micron Technology, Inc. Integrated circuit probe pad metal level
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US6373143B1 (en) * 1998-09-24 2002-04-16 International Business Machines Corporation Integrated circuit having wirebond pads suitable for probing
US6239494B1 (en) * 1999-04-21 2001-05-29 Advanced Micro Devices, Inc. Wire bonding CU interconnects

Also Published As

Publication number Publication date
EP1399966A2 (de) 2004-03-24
WO2003003458A3 (en) 2003-11-20
DE60202208T2 (de) 2005-12-15
TW582097B (en) 2004-04-01
WO2003003458A2 (en) 2003-01-09
US20020016070A1 (en) 2002-02-07
EP1399966B1 (de) 2004-12-08

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