DE602008004848D1 - Struktur mit einer getter-schicht und einer unterschicht zur einstellung sowie verfahren zu ihrer herstellung - Google Patents

Struktur mit einer getter-schicht und einer unterschicht zur einstellung sowie verfahren zu ihrer herstellung

Info

Publication number
DE602008004848D1
DE602008004848D1 DE602008004848T DE602008004848T DE602008004848D1 DE 602008004848 D1 DE602008004848 D1 DE 602008004848D1 DE 602008004848 T DE602008004848 T DE 602008004848T DE 602008004848 T DE602008004848 T DE 602008004848T DE 602008004848 D1 DE602008004848 D1 DE 602008004848D1
Authority
DE
Germany
Prior art keywords
layer
getter
substrates
adjustment
adjustment sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008004848T
Other languages
German (de)
English (en)
Inventor
Xavier Baillin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE602008004848D1 publication Critical patent/DE602008004848D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Bipolar Transistors (AREA)
DE602008004848T 2007-10-15 2008-10-09 Struktur mit einer getter-schicht und einer unterschicht zur einstellung sowie verfahren zu ihrer herstellung Active DE602008004848D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0707212A FR2922202B1 (fr) 2007-10-15 2007-10-15 Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication.
PCT/FR2008/001420 WO2009087284A1 (fr) 2007-10-15 2008-10-09 Structure comportant une couche getter et une sous-couche d'ajustement et procédé de fabrication

Publications (1)

Publication Number Publication Date
DE602008004848D1 true DE602008004848D1 (de) 2011-03-17

Family

ID=39462016

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008004848T Active DE602008004848D1 (de) 2007-10-15 2008-10-09 Struktur mit einer getter-schicht und einer unterschicht zur einstellung sowie verfahren zu ihrer herstellung

Country Status (8)

Country Link
US (2) US8605445B2 (enExample)
EP (2) EP2197780B1 (enExample)
JP (1) JP5431343B2 (enExample)
AT (1) ATE497481T1 (enExample)
CA (1) CA2701363A1 (enExample)
DE (1) DE602008004848D1 (enExample)
FR (1) FR2922202B1 (enExample)
WO (1) WO2009087284A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3271272B2 (ja) 1991-11-12 2002-04-02 日本電気株式会社 半導体装置の製造方法
FR2950877B1 (fr) 2009-10-07 2012-01-13 Commissariat Energie Atomique Structure a cavite comportant une interface de collage a base de materiau getter
FR2950876B1 (fr) 2009-10-07 2012-02-10 Commissariat Energie Atomique Procede de traitement d'un materiau getter et procede d'encapsulation d'un tel materiau getter
FR2952627A1 (fr) * 2009-11-17 2011-05-20 Commissariat Energie Atomique Getter ayant deux temperatures d'activation et structure comportant ce getter
EP2363373A1 (en) * 2010-03-02 2011-09-07 SensoNor Technologies AS Bonding process for sensitive micro-and nano-systems
FR2967150A1 (fr) * 2010-11-09 2012-05-11 Commissariat Energie Atomique Procédé de réalisation de substrat a couches enfouies de matériau getter
FR2967302B1 (fr) 2010-11-09 2012-12-21 Commissariat Energie Atomique Structure d'encapsulation d'un micro-dispositif comportant un matériau getter
FR2976932A1 (fr) * 2011-06-23 2012-12-28 Commissariat Energie Atomique Structure a materiau getter protege hermetiquement lors de sa realisation
FR2977883B1 (fr) 2011-07-11 2014-03-14 Commissariat Energie Atomique Structure getter a capacite de pompage optimisee
FR2981059A1 (fr) 2011-10-11 2013-04-12 Commissariat Energie Atomique Procede d'encapsulation de micro-dispositif par report de capot et depot de getter a travers le capot
FR2981198B1 (fr) 2011-10-11 2014-04-04 Commissariat Energie Atomique Structure d'encapsulation de dispositif electronique et procede de realisation d'une telle structure
FR2982073B1 (fr) * 2011-10-28 2014-10-10 Commissariat Energie Atomique Structure d'encapsulation hermetique d'un dispositif et d'un composant electronique
US9240362B2 (en) 2012-06-20 2016-01-19 Agency For Science, Technology And Research Layer arrangement and a wafer level package comprising the layer arrangement
JP6230286B2 (ja) * 2012-08-20 2017-11-15 セイコーインスツル株式会社 電子デバイス及び電子デバイスの製造方法
JP6230285B2 (ja) * 2012-08-24 2017-11-15 セイコーインスツル株式会社 電子デバイス、ｍｅｍｓセンサ及び電子デバイスの製造方法
CN103140026B (zh) * 2013-02-04 2015-12-02 深圳市佳捷特陶瓷电路技术有限公司 陶瓷覆铜板及其制备方法
EP2813465B1 (en) * 2013-06-12 2020-01-15 Tronic's Microsystems MEMS device with getter layer
FR3008965B1 (fr) 2013-07-26 2017-03-03 Commissariat Energie Atomique Structure d'encapsulation comprenant un capot renforce mecaniquement et a effet getter
US9637378B2 (en) 2013-09-11 2017-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. Cup-like getter scheme
US9242853B2 (en) 2013-10-15 2016-01-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method of improving getter efficiency by increasing superficial area
FR3014241B1 (fr) 2013-11-29 2017-05-05 Commissariat Energie Atomique Structure d'encapsulation comprenant des tranchees partiellement remplies de materiau getter
FR3014240B1 (fr) 2013-11-29 2017-05-05 Commissariat Energie Atomique Procede de realisation d'un substrat comportant un materiau getter dispose sur des parois d'un ou plusieurs trous borgnes formes dans le substrat
FR3030475B1 (fr) 2014-12-17 2017-01-20 Commissariat Energie Atomique Structure getter multi-niveaux et structure d'encapsulation comportant une telle structure getter multi-niveaux
US9718672B2 (en) 2015-05-27 2017-08-01 Globalfoundries Singapore Pte. Ltd. Electronic devices including substantially hermetically sealed cavities and getter films with Kelvin measurement arrangement for evaluating the getter films and methods for fabricating the same
US9438411B1 (en) 2015-08-12 2016-09-06 The Boeing Company Method and apparatus for synchronizing digital messages
US9570321B1 (en) * 2015-10-20 2017-02-14 Raytheon Company Use of an external getter to reduce package pressure
JP2018054496A (ja) * 2016-09-29 2018-04-05 セイコーインスツル株式会社 パッケージおよび赤外線センサ
FR3072788B1 (fr) 2017-10-24 2020-05-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Source de rayonnement infrarouge modulable
CN108249386B (zh) * 2018-01-23 2020-09-08 苏州大学 激活温度可控的非蒸散型薄膜吸气剂及其应用
US10526199B1 (en) * 2018-09-27 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. High efficiency getter design in vacuum MEMS device
JP2021136413A (ja) * 2020-02-28 2021-09-13 国立研究開発法人産業技術総合研究所 封止構造体およびその製造方法
CN111892014B (zh) * 2020-07-30 2023-10-31 钢铁研究总院 一种吸气薄膜及其制备方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4127134A (en) * 1977-04-11 1978-11-28 Cordis Corporation Gas-absorbing pacer and method of fabrication
US4302498A (en) * 1980-10-28 1981-11-24 Rca Corporation Laminated conducting film on an integrated circuit substrate and method of forming the laminate
US4814945A (en) * 1987-09-18 1989-03-21 Trw Inc. Multilayer printed circuit board for ceramic chip carriers
US5577020A (en) * 1993-10-08 1996-11-19 Tdk Corporation Magneto-optical disc with intermediate film layer between a recording film and a dielectric film
US5456740A (en) * 1994-06-22 1995-10-10 Millipore Corporation High-efficiency metal membrane getter element and process for making
TW448584B (en) * 1995-03-27 2001-08-01 Semiconductor Energy Lab Semiconductor device and a method of manufacturing the same
US5943601A (en) 1997-04-30 1999-08-24 International Business Machines Corporation Process for fabricating a metallization structure
US5866978A (en) * 1997-09-30 1999-02-02 Fed Corporation Matrix getter for residual gas in vacuum sealed panels
US6110808A (en) * 1998-12-04 2000-08-29 Trw Inc. Hydrogen getter for integrated microelectronic assembly
US6423575B1 (en) 2001-07-27 2002-07-23 Dean Tran Hydrogen gettering structure including silver-doped palladium layer to increase hydrogen gettering of module component and semiconductor device module having such structure, and methods of fabrication
US20030062610A1 (en) * 2001-09-28 2003-04-03 Kovacs Alan L. Multilayer thin film hydrogen getter
US6923625B2 (en) 2002-01-07 2005-08-02 Integrated Sensing Systems, Inc. Method of forming a reactive material and article formed thereby
JP2004066225A (ja) * 2002-06-13 2004-03-04 Lg Electronics Inc ゲッタの組成物及び該ゲッタの組成物を利用した電界放出表示装置
US6806557B2 (en) * 2002-09-30 2004-10-19 Motorola, Inc. Hermetically sealed microdevices having a single crystalline silicon getter for maintaining vacuum
US6988924B2 (en) * 2003-04-14 2006-01-24 Hewlett-Packard Development Company, L.P. Method of making a getter structure
ITMI20031178A1 (it) 2003-06-11 2004-12-12 Getters Spa Depositi multistrato getter non evaporabili ottenuti per
ITMI20032209A1 (it) * 2003-11-14 2005-05-15 Getters Spa Processo per la produzione di dispositivi che richiedono per il loro funzionamento un materiale getter non evaporabile.
US20060230927A1 (en) 2005-04-02 2006-10-19 Xiaobing Xie Hydrogen separation
ITMI20050616A1 (it) 2005-04-12 2006-10-13 Getters Spa Processo per la formazione di depositi getter miniaturizzati e depositi getrter cosi'ottenuti
ITMI20052343A1 (it) * 2005-12-06 2007-06-07 Getters Spa Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti

Also Published As

Publication number Publication date
WO2009087284A1 (fr) 2009-07-16
ATE497481T1 (de) 2011-02-15
FR2922202A1 (fr) 2009-04-17
EP2204347B1 (fr) 2016-03-30
FR2922202B1 (fr) 2009-11-20
JP2011501426A (ja) 2011-01-06
JP5431343B2 (ja) 2014-03-05
EP2197780A1 (fr) 2010-06-23
EP2197780B1 (fr) 2011-02-02
CA2701363A1 (fr) 2009-07-16
US20100193215A1 (en) 2010-08-05
US8605445B2 (en) 2013-12-10
EP2204347A1 (fr) 2010-07-07
US8414963B2 (en) 2013-04-09
US20100178419A1 (en) 2010-07-15

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