JP5431343B2 - ゲッタ層と調整サブ層とを備える構造および製造方法 - Google Patents

ゲッタ層と調整サブ層とを備える構造および製造方法 Download PDF

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Publication number
JP5431343B2
JP5431343B2 JP2010529422A JP2010529422A JP5431343B2 JP 5431343 B2 JP5431343 B2 JP 5431343B2 JP 2010529422 A JP2010529422 A JP 2010529422A JP 2010529422 A JP2010529422 A JP 2010529422A JP 5431343 B2 JP5431343 B2 JP 5431343B2
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Japan
Prior art keywords
getter
layer
sublayer
adjustment
getter layer
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JP2010529422A
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Japanese (ja)
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JP2011501426A (ja
JP2011501426A5 (enExample
Inventor
グザビエ、ベラン
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/48—Fillings including materials for absorbing or reacting with moisture or other undesired substances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Bipolar Transistors (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
JP2010529422A 2007-10-15 2008-10-09 ゲッタ層と調整サブ層とを備える構造および製造方法 Active JP5431343B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0707212A FR2922202B1 (fr) 2007-10-15 2007-10-15 Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication.
FR0707212 2007-10-15
PCT/FR2008/001420 WO2009087284A1 (fr) 2007-10-15 2008-10-09 Structure comportant une couche getter et une sous-couche d'ajustement et procédé de fabrication

Publications (3)

Publication Number Publication Date
JP2011501426A JP2011501426A (ja) 2011-01-06
JP2011501426A5 JP2011501426A5 (enExample) 2011-12-01
JP5431343B2 true JP5431343B2 (ja) 2014-03-05

Family

ID=39462016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010529422A Active JP5431343B2 (ja) 2007-10-15 2008-10-09 ゲッタ層と調整サブ層とを備える構造および製造方法

Country Status (8)

Country Link
US (2) US8605445B2 (enExample)
EP (2) EP2204347B1 (enExample)
JP (1) JP5431343B2 (enExample)
AT (1) ATE497481T1 (enExample)
CA (1) CA2701363A1 (enExample)
DE (1) DE602008004848D1 (enExample)
FR (1) FR2922202B1 (enExample)
WO (1) WO2009087284A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3271272B2 (ja) 1991-11-12 2002-04-02 日本電気株式会社 半導体装置の製造方法

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2950876B1 (fr) 2009-10-07 2012-02-10 Commissariat Energie Atomique Procede de traitement d'un materiau getter et procede d'encapsulation d'un tel materiau getter
FR2950877B1 (fr) 2009-10-07 2012-01-13 Commissariat Energie Atomique Structure a cavite comportant une interface de collage a base de materiau getter
FR2952627A1 (fr) * 2009-11-17 2011-05-20 Commissariat Energie Atomique Getter ayant deux temperatures d'activation et structure comportant ce getter
EP2363373A1 (en) * 2010-03-02 2011-09-07 SensoNor Technologies AS Bonding process for sensitive micro-and nano-systems
FR2967150A1 (fr) 2010-11-09 2012-05-11 Commissariat Energie Atomique Procédé de réalisation de substrat a couches enfouies de matériau getter
FR2967302B1 (fr) * 2010-11-09 2012-12-21 Commissariat Energie Atomique Structure d'encapsulation d'un micro-dispositif comportant un matériau getter
FR2976932A1 (fr) * 2011-06-23 2012-12-28 Commissariat Energie Atomique Structure a materiau getter protege hermetiquement lors de sa realisation
FR2977883B1 (fr) 2011-07-11 2014-03-14 Commissariat Energie Atomique Structure getter a capacite de pompage optimisee
FR2981198B1 (fr) * 2011-10-11 2014-04-04 Commissariat Energie Atomique Structure d'encapsulation de dispositif electronique et procede de realisation d'une telle structure
FR2981059A1 (fr) 2011-10-11 2013-04-12 Commissariat Energie Atomique Procede d'encapsulation de micro-dispositif par report de capot et depot de getter a travers le capot
FR2982073B1 (fr) * 2011-10-28 2014-10-10 Commissariat Energie Atomique Structure d'encapsulation hermetique d'un dispositif et d'un composant electronique
US9240362B2 (en) 2012-06-20 2016-01-19 Agency For Science, Technology And Research Layer arrangement and a wafer level package comprising the layer arrangement
JP6230286B2 (ja) * 2012-08-20 2017-11-15 セイコーインスツル株式会社 電子デバイス及び電子デバイスの製造方法
JP6230285B2 (ja) * 2012-08-24 2017-11-15 セイコーインスツル株式会社 電子デバイス、ｍｅｍｓセンサ及び電子デバイスの製造方法
CN103140026B (zh) * 2013-02-04 2015-12-02 深圳市佳捷特陶瓷电路技术有限公司 陶瓷覆铜板及其制备方法
EP2813465B1 (en) * 2013-06-12 2020-01-15 Tronic's Microsystems MEMS device with getter layer
FR3008965B1 (fr) 2013-07-26 2017-03-03 Commissariat Energie Atomique Structure d'encapsulation comprenant un capot renforce mecaniquement et a effet getter
US9637378B2 (en) 2013-09-11 2017-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. Cup-like getter scheme
US9242853B2 (en) 2013-10-15 2016-01-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method of improving getter efficiency by increasing superficial area
FR3014240B1 (fr) 2013-11-29 2017-05-05 Commissariat Energie Atomique Procede de realisation d'un substrat comportant un materiau getter dispose sur des parois d'un ou plusieurs trous borgnes formes dans le substrat
FR3014241B1 (fr) 2013-11-29 2017-05-05 Commissariat Energie Atomique Structure d'encapsulation comprenant des tranchees partiellement remplies de materiau getter
FR3030475B1 (fr) 2014-12-17 2017-01-20 Commissariat Energie Atomique Structure getter multi-niveaux et structure d'encapsulation comportant une telle structure getter multi-niveaux
US9718672B2 (en) 2015-05-27 2017-08-01 Globalfoundries Singapore Pte. Ltd. Electronic devices including substantially hermetically sealed cavities and getter films with Kelvin measurement arrangement for evaluating the getter films and methods for fabricating the same
US9438411B1 (en) 2015-08-12 2016-09-06 The Boeing Company Method and apparatus for synchronizing digital messages
US9570321B1 (en) * 2015-10-20 2017-02-14 Raytheon Company Use of an external getter to reduce package pressure
JP2018054496A (ja) * 2016-09-29 2018-04-05 セイコーインスツル株式会社 パッケージおよび赤外線センサ
FR3072788B1 (fr) 2017-10-24 2020-05-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Source de rayonnement infrarouge modulable
CN108249386B (zh) * 2018-01-23 2020-09-08 苏州大学 激活温度可控的非蒸散型薄膜吸气剂及其应用
US10526199B1 (en) * 2018-09-27 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. High efficiency getter design in vacuum MEMS device
JP2021136413A (ja) * 2020-02-28 2021-09-13 国立研究開発法人産業技術総合研究所 封止構造体およびその製造方法
CN111892014B (zh) * 2020-07-30 2023-10-31 钢铁研究总院 一种吸气薄膜及其制备方法
US20240261579A1 (en) * 2023-02-06 2024-08-08 Cardiac Pacemakers, Inc. Implantable medical device with hydrogen getter

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4127134A (en) * 1977-04-11 1978-11-28 Cordis Corporation Gas-absorbing pacer and method of fabrication
US4302498A (en) * 1980-10-28 1981-11-24 Rca Corporation Laminated conducting film on an integrated circuit substrate and method of forming the laminate
US4814945A (en) * 1987-09-18 1989-03-21 Trw Inc. Multilayer printed circuit board for ceramic chip carriers
US5577020A (en) * 1993-10-08 1996-11-19 Tdk Corporation Magneto-optical disc with intermediate film layer between a recording film and a dielectric film
US5456740A (en) * 1994-06-22 1995-10-10 Millipore Corporation High-efficiency metal membrane getter element and process for making
TW448584B (en) * 1995-03-27 2001-08-01 Semiconductor Energy Lab Semiconductor device and a method of manufacturing the same
US5943601A (en) 1997-04-30 1999-08-24 International Business Machines Corporation Process for fabricating a metallization structure
US5866978A (en) * 1997-09-30 1999-02-02 Fed Corporation Matrix getter for residual gas in vacuum sealed panels
US6110808A (en) * 1998-12-04 2000-08-29 Trw Inc. Hydrogen getter for integrated microelectronic assembly
US6423575B1 (en) * 2001-07-27 2002-07-23 Dean Tran Hydrogen gettering structure including silver-doped palladium layer to increase hydrogen gettering of module component and semiconductor device module having such structure, and methods of fabrication
US20030062610A1 (en) * 2001-09-28 2003-04-03 Kovacs Alan L. Multilayer thin film hydrogen getter
US6923625B2 (en) 2002-01-07 2005-08-02 Integrated Sensing Systems, Inc. Method of forming a reactive material and article formed thereby
JP2004066225A (ja) * 2002-06-13 2004-03-04 Lg Electronics Inc ゲッタの組成物及び該ゲッタの組成物を利用した電界放出表示装置
US6806557B2 (en) * 2002-09-30 2004-10-19 Motorola, Inc. Hermetically sealed microdevices having a single crystalline silicon getter for maintaining vacuum
US6988924B2 (en) * 2003-04-14 2006-01-24 Hewlett-Packard Development Company, L.P. Method of making a getter structure
ITMI20031178A1 (it) 2003-06-11 2004-12-12 Getters Spa Depositi multistrato getter non evaporabili ottenuti per
ITMI20032209A1 (it) * 2003-11-14 2005-05-15 Getters Spa Processo per la produzione di dispositivi che richiedono per il loro funzionamento un materiale getter non evaporabile.
US20060230927A1 (en) 2005-04-02 2006-10-19 Xiaobing Xie Hydrogen separation
ITMI20050616A1 (it) 2005-04-12 2006-10-13 Getters Spa Processo per la formazione di depositi getter miniaturizzati e depositi getrter cosi'ottenuti
ITMI20052343A1 (it) * 2005-12-06 2007-06-07 Getters Spa Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3271272B2 (ja) 1991-11-12 2002-04-02 日本電気株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2011501426A (ja) 2011-01-06
WO2009087284A1 (fr) 2009-07-16
US8605445B2 (en) 2013-12-10
EP2204347A1 (fr) 2010-07-07
FR2922202B1 (fr) 2009-11-20
CA2701363A1 (fr) 2009-07-16
EP2197780A1 (fr) 2010-06-23
FR2922202A1 (fr) 2009-04-17
US20100193215A1 (en) 2010-08-05
EP2197780B1 (fr) 2011-02-02
US20100178419A1 (en) 2010-07-15
DE602008004848D1 (de) 2011-03-17
EP2204347B1 (fr) 2016-03-30
US8414963B2 (en) 2013-04-09
ATE497481T1 (de) 2011-02-15

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