FR2922202B1 - Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication. - Google Patents

Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication.

Info

Publication number
FR2922202B1
FR2922202B1 FR0707212A FR0707212A FR2922202B1 FR 2922202 B1 FR2922202 B1 FR 2922202B1 FR 0707212 A FR0707212 A FR 0707212A FR 0707212 A FR0707212 A FR 0707212A FR 2922202 B1 FR2922202 B1 FR 2922202B1
Authority
FR
France
Prior art keywords
layer
getter
adjustment sub
substrates
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0707212A
Other languages
English (en)
French (fr)
Other versions
FR2922202A1 (fr
Inventor
Xavier Baillin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0707212A priority Critical patent/FR2922202B1/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to US12/679,487 priority patent/US8605445B2/en
Priority to JP2010529422A priority patent/JP5431343B2/ja
Priority to AT08869876T priority patent/ATE497481T1/de
Priority to DE602008004848T priority patent/DE602008004848D1/de
Priority to CA2701363A priority patent/CA2701363A1/fr
Priority to EP10158202.1A priority patent/EP2204347B1/fr
Priority to PCT/FR2008/001420 priority patent/WO2009087284A1/fr
Priority to EP08869876A priority patent/EP2197780B1/fr
Publication of FR2922202A1 publication Critical patent/FR2922202A1/fr
Application granted granted Critical
Publication of FR2922202B1 publication Critical patent/FR2922202B1/fr
Priority to US12/729,634 priority patent/US8414963B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/48—Fillings including materials for absorbing or reacting with moisture or other undesired substances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Bipolar Transistors (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
FR0707212A 2007-10-15 2007-10-15 Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication. Expired - Fee Related FR2922202B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR0707212A FR2922202B1 (fr) 2007-10-15 2007-10-15 Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication.
EP08869876A EP2197780B1 (fr) 2007-10-15 2008-10-09 Structure comportant une couche getter et une sous-couche d'ajustement et procédé de fabrication
AT08869876T ATE497481T1 (de) 2007-10-15 2008-10-09 Struktur mit einer getter-schicht und einer unterschicht zur einstellung sowie verfahren zu ihrer herstellung
DE602008004848T DE602008004848D1 (de) 2007-10-15 2008-10-09 Struktur mit einer getter-schicht und einer unterschicht zur einstellung sowie verfahren zu ihrer herstellung
CA2701363A CA2701363A1 (fr) 2007-10-15 2008-10-09 Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication
EP10158202.1A EP2204347B1 (fr) 2007-10-15 2008-10-09 Structure comportant une couche getter et une sous-couche d'ajustement de la température d'activation et procédé de fabrication
US12/679,487 US8605445B2 (en) 2007-10-15 2008-10-09 Structure comprising a getter layer and an adjusting sublayer and fabrication process
JP2010529422A JP5431343B2 (ja) 2007-10-15 2008-10-09 ゲッタ層と調整サブ層とを備える構造および製造方法
PCT/FR2008/001420 WO2009087284A1 (fr) 2007-10-15 2008-10-09 Structure comportant une couche getter et une sous-couche d'ajustement et procédé de fabrication
US12/729,634 US8414963B2 (en) 2007-10-15 2010-03-23 Structure comprising a getter layer and an adjusting sublayer and fabrication process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0707212A FR2922202B1 (fr) 2007-10-15 2007-10-15 Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication.

Publications (2)

Publication Number Publication Date
FR2922202A1 FR2922202A1 (fr) 2009-04-17
FR2922202B1 true FR2922202B1 (fr) 2009-11-20

Family

ID=39462016

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0707212A Expired - Fee Related FR2922202B1 (fr) 2007-10-15 2007-10-15 Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication.

Country Status (8)

Country Link
US (2) US8605445B2 (enExample)
EP (2) EP2204347B1 (enExample)
JP (1) JP5431343B2 (enExample)
AT (1) ATE497481T1 (enExample)
CA (1) CA2701363A1 (enExample)
DE (1) DE602008004848D1 (enExample)
FR (1) FR2922202B1 (enExample)
WO (1) WO2009087284A1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3271272B2 (ja) 1991-11-12 2002-04-02 日本電気株式会社 半導体装置の製造方法
FR2950876B1 (fr) 2009-10-07 2012-02-10 Commissariat Energie Atomique Procede de traitement d'un materiau getter et procede d'encapsulation d'un tel materiau getter
FR2950877B1 (fr) 2009-10-07 2012-01-13 Commissariat Energie Atomique Structure a cavite comportant une interface de collage a base de materiau getter
FR2952627A1 (fr) * 2009-11-17 2011-05-20 Commissariat Energie Atomique Getter ayant deux temperatures d'activation et structure comportant ce getter
EP2363373A1 (en) * 2010-03-02 2011-09-07 SensoNor Technologies AS Bonding process for sensitive micro-and nano-systems
FR2967150A1 (fr) 2010-11-09 2012-05-11 Commissariat Energie Atomique Procédé de réalisation de substrat a couches enfouies de matériau getter
FR2967302B1 (fr) * 2010-11-09 2012-12-21 Commissariat Energie Atomique Structure d'encapsulation d'un micro-dispositif comportant un matériau getter
FR2976932A1 (fr) * 2011-06-23 2012-12-28 Commissariat Energie Atomique Structure a materiau getter protege hermetiquement lors de sa realisation
FR2977883B1 (fr) 2011-07-11 2014-03-14 Commissariat Energie Atomique Structure getter a capacite de pompage optimisee
FR2981198B1 (fr) * 2011-10-11 2014-04-04 Commissariat Energie Atomique Structure d'encapsulation de dispositif electronique et procede de realisation d'une telle structure
FR2981059A1 (fr) 2011-10-11 2013-04-12 Commissariat Energie Atomique Procede d'encapsulation de micro-dispositif par report de capot et depot de getter a travers le capot
FR2982073B1 (fr) * 2011-10-28 2014-10-10 Commissariat Energie Atomique Structure d'encapsulation hermetique d'un dispositif et d'un composant electronique
US9240362B2 (en) 2012-06-20 2016-01-19 Agency For Science, Technology And Research Layer arrangement and a wafer level package comprising the layer arrangement
JP6230286B2 (ja) * 2012-08-20 2017-11-15 セイコーインスツル株式会社 電子デバイス及び電子デバイスの製造方法
JP6230285B2 (ja) * 2012-08-24 2017-11-15 セイコーインスツル株式会社 電子デバイス、ｍｅｍｓセンサ及び電子デバイスの製造方法
CN103140026B (zh) * 2013-02-04 2015-12-02 深圳市佳捷特陶瓷电路技术有限公司 陶瓷覆铜板及其制备方法
EP2813465B1 (en) * 2013-06-12 2020-01-15 Tronic's Microsystems MEMS device with getter layer
FR3008965B1 (fr) 2013-07-26 2017-03-03 Commissariat Energie Atomique Structure d'encapsulation comprenant un capot renforce mecaniquement et a effet getter
US9637378B2 (en) 2013-09-11 2017-05-02 Taiwan Semiconductor Manufacturing Co., Ltd. Cup-like getter scheme
US9242853B2 (en) 2013-10-15 2016-01-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method of improving getter efficiency by increasing superficial area
FR3014240B1 (fr) 2013-11-29 2017-05-05 Commissariat Energie Atomique Procede de realisation d'un substrat comportant un materiau getter dispose sur des parois d'un ou plusieurs trous borgnes formes dans le substrat
FR3014241B1 (fr) 2013-11-29 2017-05-05 Commissariat Energie Atomique Structure d'encapsulation comprenant des tranchees partiellement remplies de materiau getter
FR3030475B1 (fr) 2014-12-17 2017-01-20 Commissariat Energie Atomique Structure getter multi-niveaux et structure d'encapsulation comportant une telle structure getter multi-niveaux
US9718672B2 (en) 2015-05-27 2017-08-01 Globalfoundries Singapore Pte. Ltd. Electronic devices including substantially hermetically sealed cavities and getter films with Kelvin measurement arrangement for evaluating the getter films and methods for fabricating the same
US9438411B1 (en) 2015-08-12 2016-09-06 The Boeing Company Method and apparatus for synchronizing digital messages
US9570321B1 (en) * 2015-10-20 2017-02-14 Raytheon Company Use of an external getter to reduce package pressure
JP2018054496A (ja) * 2016-09-29 2018-04-05 セイコーインスツル株式会社 パッケージおよび赤外線センサ
FR3072788B1 (fr) 2017-10-24 2020-05-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Source de rayonnement infrarouge modulable
CN108249386B (zh) * 2018-01-23 2020-09-08 苏州大学 激活温度可控的非蒸散型薄膜吸气剂及其应用
US10526199B1 (en) * 2018-09-27 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. High efficiency getter design in vacuum MEMS device
JP2021136413A (ja) * 2020-02-28 2021-09-13 国立研究開発法人産業技術総合研究所 封止構造体およびその製造方法
CN111892014B (zh) * 2020-07-30 2023-10-31 钢铁研究总院 一种吸气薄膜及其制备方法
US20240261579A1 (en) * 2023-02-06 2024-08-08 Cardiac Pacemakers, Inc. Implantable medical device with hydrogen getter

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4127134A (en) * 1977-04-11 1978-11-28 Cordis Corporation Gas-absorbing pacer and method of fabrication
US4302498A (en) * 1980-10-28 1981-11-24 Rca Corporation Laminated conducting film on an integrated circuit substrate and method of forming the laminate
US4814945A (en) * 1987-09-18 1989-03-21 Trw Inc. Multilayer printed circuit board for ceramic chip carriers
US5577020A (en) * 1993-10-08 1996-11-19 Tdk Corporation Magneto-optical disc with intermediate film layer between a recording film and a dielectric film
US5456740A (en) * 1994-06-22 1995-10-10 Millipore Corporation High-efficiency metal membrane getter element and process for making
TW448584B (en) * 1995-03-27 2001-08-01 Semiconductor Energy Lab Semiconductor device and a method of manufacturing the same
US5943601A (en) 1997-04-30 1999-08-24 International Business Machines Corporation Process for fabricating a metallization structure
US5866978A (en) * 1997-09-30 1999-02-02 Fed Corporation Matrix getter for residual gas in vacuum sealed panels
US6110808A (en) * 1998-12-04 2000-08-29 Trw Inc. Hydrogen getter for integrated microelectronic assembly
US6423575B1 (en) * 2001-07-27 2002-07-23 Dean Tran Hydrogen gettering structure including silver-doped palladium layer to increase hydrogen gettering of module component and semiconductor device module having such structure, and methods of fabrication
US20030062610A1 (en) * 2001-09-28 2003-04-03 Kovacs Alan L. Multilayer thin film hydrogen getter
US6923625B2 (en) 2002-01-07 2005-08-02 Integrated Sensing Systems, Inc. Method of forming a reactive material and article formed thereby
JP2004066225A (ja) * 2002-06-13 2004-03-04 Lg Electronics Inc ゲッタの組成物及び該ゲッタの組成物を利用した電界放出表示装置
US6806557B2 (en) * 2002-09-30 2004-10-19 Motorola, Inc. Hermetically sealed microdevices having a single crystalline silicon getter for maintaining vacuum
US6988924B2 (en) * 2003-04-14 2006-01-24 Hewlett-Packard Development Company, L.P. Method of making a getter structure
ITMI20031178A1 (it) 2003-06-11 2004-12-12 Getters Spa Depositi multistrato getter non evaporabili ottenuti per
ITMI20032209A1 (it) * 2003-11-14 2005-05-15 Getters Spa Processo per la produzione di dispositivi che richiedono per il loro funzionamento un materiale getter non evaporabile.
US20060230927A1 (en) 2005-04-02 2006-10-19 Xiaobing Xie Hydrogen separation
ITMI20050616A1 (it) 2005-04-12 2006-10-13 Getters Spa Processo per la formazione di depositi getter miniaturizzati e depositi getrter cosi'ottenuti
ITMI20052343A1 (it) * 2005-12-06 2007-06-07 Getters Spa Processo per la produzione di dispositivi micromeccanici contenenti un materiale getter e dispositivi cosi'prodotti

Also Published As

Publication number Publication date
JP2011501426A (ja) 2011-01-06
WO2009087284A1 (fr) 2009-07-16
US8605445B2 (en) 2013-12-10
EP2204347A1 (fr) 2010-07-07
CA2701363A1 (fr) 2009-07-16
EP2197780A1 (fr) 2010-06-23
FR2922202A1 (fr) 2009-04-17
US20100193215A1 (en) 2010-08-05
EP2197780B1 (fr) 2011-02-02
US20100178419A1 (en) 2010-07-15
DE602008004848D1 (de) 2011-03-17
EP2204347B1 (fr) 2016-03-30
JP5431343B2 (ja) 2014-03-05
US8414963B2 (en) 2013-04-09
ATE497481T1 (de) 2011-02-15

Similar Documents

Publication Publication Date Title
FR2922202B1 (fr) Structure comportant une couche getter et une sous-couche d'ajustement et procede de fabrication.
JP5571988B2 (ja) 接合方法
WO2009066561A1 (ja) 有機エレクトロルミネッセンス装置およびその製造方法
JP2006019717A5 (enExample)
WO2008033508A3 (en) Image sensor using thin-film soi
TW200605318A (en) Semiconductor device having adhesion increasing film and method of fabricating the same
PL1860722T3 (pl) Mikropodzespół scalony, łączący w sobie funkcję odzyskiwania i magazynowania energii
WO2007024732A3 (en) Dual substrate electrostatic mems switch with hermetic seal and method of manufacture
TW200733318A (en) Wafer-level package structure and production method therefor
TW200938479A (en) Micromachine device and method of manufacturing the same
WO2009099669A3 (en) Mems plate switch and method of manufacture
WO2006094313A3 (en) Forming method for polymeric laminated wafers comprising different film materials
JP2014533893A (ja) 電子デバイス構造を提供する方法および関連する電子デバイス構造
WO2010143895A3 (en) Semiconductor substrate, semiconductor device, and manufacturing methods thereof
TW200741934A (en) Wafer-shaped measuring apparatus and method for manufacturing the same
WO2008084639A1 (ja) 多層膜形成方法及び多層膜形成装置
DE602006020921D1 (de) Haftartikel, verbundartikel und herstellungsverfahren dafür
US20130105089A1 (en) Method for separating substrate assembly
TW200620434A (en) Semiconductor device having carbon-containing metal silicide layer and method of fabricating the same
US7563343B2 (en) Film lamination apparatus and method and a manufacturing method of a semiconductor apparatus
FR2921750B1 (fr) Formation selective d'un compose comprenant un materiau semi-conducteur et un materiau metallique dans un substrat, a travers une couche d'oxyde de germanium
TW200739989A (en) Organic light emitting display device and method of fabricating the same
TW202212931A (zh) 載體釋脫技術
WO2007106814A3 (en) Semiconductor device fabricated using a carbon-containing film as a contact etch stop layer
TW200713452A (en) Method of semiconductor thin film crystallization and semiconductor device fabrication

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20130628