DE602008003756D1 - Sensorpaket - Google Patents

Sensorpaket

Info

Publication number
DE602008003756D1
DE602008003756D1 DE602008003756T DE602008003756T DE602008003756D1 DE 602008003756 D1 DE602008003756 D1 DE 602008003756D1 DE 602008003756 T DE602008003756 T DE 602008003756T DE 602008003756 T DE602008003756 T DE 602008003756T DE 602008003756 D1 DE602008003756 D1 DE 602008003756D1
Authority
DE
Germany
Prior art keywords
portion extending
sensor package
sensorpaket
sensor
potion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008003756T
Other languages
English (en)
Inventor
Paulus Martinus Hesen
Roelf Anco Groenhuis
Johannes Wilhelmus Bosch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Publication of DE602008003756D1 publication Critical patent/DE602008003756D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device
DE602008003756T 2007-02-19 2008-02-13 Sensorpaket Active DE602008003756D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP07003414 2007-02-19
PCT/IB2008/050510 WO2008102281A1 (en) 2007-02-19 2008-02-13 Sensor package

Publications (1)

Publication Number Publication Date
DE602008003756D1 true DE602008003756D1 (en) 2011-01-13

Family

ID=39466099

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008003756T Active DE602008003756D1 (en) 2007-02-19 2008-02-13 Sensorpaket

Country Status (7)

Country Link
US (2) US8664946B2 (de)
EP (1) EP2115481B1 (de)
CN (1) CN101617243B (de)
AT (1) ATE490474T1 (de)
DE (1) DE602008003756D1 (de)
TW (1) TW200842325A (de)
WO (1) WO2008102281A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE490474T1 (de) * 2007-02-19 2010-12-15 Nxp Bv Sensorpaket
JP5437147B2 (ja) * 2010-04-22 2014-03-12 愛三工業株式会社 回転角度検出装置
US9201123B2 (en) 2011-11-04 2015-12-01 Infineon Technologies Ag Magnetic sensor device and a method for fabricating the same
US9121880B2 (en) * 2011-11-04 2015-09-01 Infineon Technologies Ag Magnetic sensor device
US9837188B2 (en) * 2012-07-06 2017-12-05 Nxp B.V. Differential return loss supporting high speed bus interfaces
KR102131977B1 (ko) * 2014-12-08 2020-07-08 로힛 세스 착용가능 무선 hmi 디바이스
CN107209033B (zh) 2015-01-28 2019-11-12 大陆-特韦斯股份有限公司 具有对称掩埋的传感器元件的传感器
KR20170108023A (ko) * 2015-01-28 2017-09-26 콘티넨탈 테베스 아게 운트 코. 오하게 센서용 매립형 필터 컴포넌트들을 갖는 어댑터
EP3156770A1 (de) * 2015-10-15 2017-04-19 Nxp B.V. Drehwinkelsensor
US10852143B2 (en) 2018-06-27 2020-12-01 Rohit Seth Motion sensor with drift correction

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021736A (en) * 1989-09-19 1991-06-04 Texas Instruments Incorporated Speed/position sensor calibration method with angular adjustment of a magnetoresistive element
US5121289A (en) * 1990-01-31 1992-06-09 Honeywell Inc. Encapsulatable sensor assembly
US5414355A (en) * 1994-03-03 1995-05-09 Honeywell Inc. Magnet carrier disposed within an outer housing
US5500589A (en) * 1995-01-18 1996-03-19 Honeywell Inc. Method for calibrating a sensor by moving a magnet while monitoring an output signal from a magnetically sensitive component
US5631557A (en) 1996-02-16 1997-05-20 Honeywell Inc. Magnetic sensor with encapsulated magnetically sensitive component and magnet
FR2748105B1 (fr) 1996-04-25 1998-05-29 Siemens Automotive Sa Capteur magnetique et procede de realisation d'un tel capteur
JPH11304894A (ja) * 1998-04-23 1999-11-05 Mitsubishi Electric Corp 磁気検出装置とその製造方法
US7250330B2 (en) * 2002-10-29 2007-07-31 International Business Machines Corporation Method of making an electronic package
JP2004153113A (ja) 2002-10-31 2004-05-27 Toshiba Corp 回路配線基板、その製造方法及びこれに用いられる封止樹脂組成物
JP2004191065A (ja) 2002-12-06 2004-07-08 Asahi Kasei Electronics Co Ltd 磁気センサおよびその製造方法
JP2004195786A (ja) * 2002-12-18 2004-07-15 Alps Electric Co Ltd 電子部品の製造方法および電子部品
US7141874B2 (en) * 2003-05-14 2006-11-28 Matsushita Electric Industrial Co., Ltd. Electronic component packaging structure and method for producing the same
US6927482B1 (en) * 2003-10-01 2005-08-09 General Electric Company Surface mount package and method for forming multi-chip microsensor device
JP2007523336A (ja) * 2004-02-24 2007-08-16 プレットル，ロルフ センサーホルダおよびその製造方法
US7077766B2 (en) 2004-06-30 2006-07-18 Bennett Robert A Basketball training device
JP4453485B2 (ja) 2004-08-19 2010-04-21 株式会社デンソー 磁石装置
DE102004061260A1 (de) * 2004-12-20 2006-06-29 Robert Bosch Gmbh Magnetfeldsensor
US20060211176A1 (en) * 2005-03-09 2006-09-21 Shiga International Manufacturing method for physical quantity sensor using lead frame and bonding device therefor
DE102005027767A1 (de) * 2005-06-15 2006-12-28 Infineon Technologies Ag Integriertes magnetisches Sensorbauteil
US7269992B2 (en) * 2005-06-15 2007-09-18 Honeywell International Inc. Magnet orientation and calibration for small package turbocharger speed sensor
JP4317841B2 (ja) * 2005-09-28 2009-08-19 三菱電機株式会社 内燃機関の吸気制御装置
US7375406B2 (en) * 2005-12-20 2008-05-20 Honeywell International Inc. Thermoplastic overmolding for small package turbocharger speed sensor
KR100790994B1 (ko) * 2006-08-01 2008-01-03 삼성전자주식회사 이미지 센서 패키지, 그 제조 방법 및 이미지 센서패키지를 포함하는 이미지 센서 모듈
ATE490474T1 (de) * 2007-02-19 2010-12-15 Nxp Bv Sensorpaket
DE102008064047A1 (de) * 2008-10-02 2010-04-08 Continental Teves Ag & Co. Ohg Sensorelement und Trägerelement zur Herstellung eines Sensors
EP2320453A1 (de) * 2009-11-06 2011-05-11 Nxp B.V. Sensorgehäuse
KR101356143B1 (ko) * 2012-05-15 2014-01-27 크루셜텍 (주) 지문센서 패키지 및 그 제조방법

Also Published As

Publication number Publication date
US20140130346A1 (en) 2014-05-15
US20100117171A1 (en) 2010-05-13
WO2008102281A1 (en) 2008-08-28
CN101617243B (zh) 2012-08-29
EP2115481A1 (de) 2009-11-11
TW200842325A (en) 2008-11-01
CN101617243A (zh) 2009-12-30
US8664946B2 (en) 2014-03-04
ATE490474T1 (de) 2010-12-15
US9222989B2 (en) 2015-12-29
EP2115481B1 (de) 2010-12-01

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