CN101617243B - 传感器封装 - Google Patents

传感器封装 Download PDF

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Publication number
CN101617243B
CN101617243B CN2008800053923A CN200880005392A CN101617243B CN 101617243 B CN101617243 B CN 101617243B CN 2008800053923 A CN2008800053923 A CN 2008800053923A CN 200880005392 A CN200880005392 A CN 200880005392A CN 101617243 B CN101617243 B CN 101617243B
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CN
China
Prior art keywords
ferrite
magnetoresistive transducer
asic
sensor package
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008800053923A
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English (en)
Chinese (zh)
Other versions
CN101617243A (zh
Inventor
保卢斯·马蒂纳斯·凯瑟琳娜·赫森
罗尔夫·安科·雅各布·格罗恩休斯
约翰内斯·威廉默斯·多罗特乌斯·博斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of CN101617243A publication Critical patent/CN101617243A/zh
Application granted granted Critical
Publication of CN101617243B publication Critical patent/CN101617243B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device
CN2008800053923A 2007-02-19 2008-02-13 传感器封装 Expired - Fee Related CN101617243B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP07003414.5 2007-02-19
EP07003414 2007-02-19
PCT/IB2008/050510 WO2008102281A1 (en) 2007-02-19 2008-02-13 Sensor package

Publications (2)

Publication Number Publication Date
CN101617243A CN101617243A (zh) 2009-12-30
CN101617243B true CN101617243B (zh) 2012-08-29

Family

ID=39466099

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800053923A Expired - Fee Related CN101617243B (zh) 2007-02-19 2008-02-13 传感器封装

Country Status (7)

Country Link
US (2) US8664946B2 (de)
EP (1) EP2115481B1 (de)
CN (1) CN101617243B (de)
AT (1) ATE490474T1 (de)
DE (1) DE602008003756D1 (de)
TW (1) TW200842325A (de)
WO (1) WO2008102281A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE490474T1 (de) * 2007-02-19 2010-12-15 Nxp Bv Sensorpaket
JP5437147B2 (ja) * 2010-04-22 2014-03-12 愛三工業株式会社 回転角度検出装置
US9201123B2 (en) 2011-11-04 2015-12-01 Infineon Technologies Ag Magnetic sensor device and a method for fabricating the same
US9121880B2 (en) * 2011-11-04 2015-09-01 Infineon Technologies Ag Magnetic sensor device
US9837188B2 (en) * 2012-07-06 2017-12-05 Nxp B.V. Differential return loss supporting high speed bus interfaces
KR102131977B1 (ko) * 2014-12-08 2020-07-08 로힛 세스 착용가능 무선 hmi 디바이스
CN107209033B (zh) 2015-01-28 2019-11-12 大陆-特韦斯股份有限公司 具有对称掩埋的传感器元件的传感器
KR20170108023A (ko) * 2015-01-28 2017-09-26 콘티넨탈 테베스 아게 운트 코. 오하게 센서용 매립형 필터 컴포넌트들을 갖는 어댑터
EP3156770A1 (de) * 2015-10-15 2017-04-19 Nxp B.V. Drehwinkelsensor
US10852143B2 (en) 2018-06-27 2020-12-01 Rohit Seth Motion sensor with drift correction

Citations (4)

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US6326779B1 (en) * 1998-04-23 2001-12-04 Mitsubishi Denki Kabushiki Kaisha Magnetic detector having separate base and connector units and production process therefor
CN1499594A (zh) * 2002-10-29 2004-05-26 国际商业机器公司 制作电子封装的方法以及电子封装
JP2004153113A (ja) * 2002-10-31 2004-05-27 Toshiba Corp 回路配線基板、その製造方法及びこれに用いられる封止樹脂組成物
CN1508857A (zh) * 2002-12-18 2004-06-30 阿尔卑斯电气株式会社 电子器件的制造方法及电子器件

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US5121289A (en) * 1990-01-31 1992-06-09 Honeywell Inc. Encapsulatable sensor assembly
US5414355A (en) * 1994-03-03 1995-05-09 Honeywell Inc. Magnet carrier disposed within an outer housing
US5500589A (en) * 1995-01-18 1996-03-19 Honeywell Inc. Method for calibrating a sensor by moving a magnet while monitoring an output signal from a magnetically sensitive component
US5631557A (en) 1996-02-16 1997-05-20 Honeywell Inc. Magnetic sensor with encapsulated magnetically sensitive component and magnet
FR2748105B1 (fr) 1996-04-25 1998-05-29 Siemens Automotive Sa Capteur magnetique et procede de realisation d'un tel capteur
JP2004191065A (ja) 2002-12-06 2004-07-08 Asahi Kasei Electronics Co Ltd 磁気センサおよびその製造方法
US7141874B2 (en) * 2003-05-14 2006-11-28 Matsushita Electric Industrial Co., Ltd. Electronic component packaging structure and method for producing the same
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JP2007523336A (ja) * 2004-02-24 2007-08-16 プレットル，ロルフ センサーホルダおよびその製造方法
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JP4453485B2 (ja) 2004-08-19 2010-04-21 株式会社デンソー 磁石装置
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JP4317841B2 (ja) * 2005-09-28 2009-08-19 三菱電機株式会社 内燃機関の吸気制御装置
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ATE490474T1 (de) * 2007-02-19 2010-12-15 Nxp Bv Sensorpaket
DE102008064047A1 (de) * 2008-10-02 2010-04-08 Continental Teves Ag & Co. Ohg Sensorelement und Trägerelement zur Herstellung eines Sensors
EP2320453A1 (de) * 2009-11-06 2011-05-11 Nxp B.V. Sensorgehäuse
KR101356143B1 (ko) * 2012-05-15 2014-01-27 크루셜텍 (주) 지문센서 패키지 및 그 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6326779B1 (en) * 1998-04-23 2001-12-04 Mitsubishi Denki Kabushiki Kaisha Magnetic detector having separate base and connector units and production process therefor
CN1499594A (zh) * 2002-10-29 2004-05-26 国际商业机器公司 制作电子封装的方法以及电子封装
JP2004153113A (ja) * 2002-10-31 2004-05-27 Toshiba Corp 回路配線基板、その製造方法及びこれに用いられる封止樹脂組成物
CN1508857A (zh) * 2002-12-18 2004-06-30 阿尔卑斯电气株式会社 电子器件的制造方法及电子器件

Also Published As

Publication number Publication date
US20140130346A1 (en) 2014-05-15
US20100117171A1 (en) 2010-05-13
WO2008102281A1 (en) 2008-08-28
EP2115481A1 (de) 2009-11-11
TW200842325A (en) 2008-11-01
DE602008003756D1 (en) 2011-01-13
CN101617243A (zh) 2009-12-30
US8664946B2 (en) 2014-03-04
ATE490474T1 (de) 2010-12-15
US9222989B2 (en) 2015-12-29
EP2115481B1 (de) 2010-12-01

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Granted publication date: 20120829

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