DE602008001585D1 - Physikalischer Sensor und Herstellungsverfahren - Google Patents

Physikalischer Sensor und Herstellungsverfahren

Info

Publication number
DE602008001585D1
DE602008001585D1 DE602008001585T DE602008001585T DE602008001585D1 DE 602008001585 D1 DE602008001585 D1 DE 602008001585D1 DE 602008001585 T DE602008001585 T DE 602008001585T DE 602008001585 T DE602008001585 T DE 602008001585T DE 602008001585 D1 DE602008001585 D1 DE 602008001585D1
Authority
DE
Germany
Prior art keywords
manufacturing process
physical sensor
physical
sensor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008001585T
Other languages
English (en)
Inventor
Kengo Suzuki
Takeshi Harada
Yasuo Osone
Masahide Hayashi
Teruhisa Akashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE602008001585D1 publication Critical patent/DE602008001585D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/094—Feed-through, via
    • B81B2207/096—Feed-through, via through the substrate
DE602008001585T 2007-07-20 2008-07-15 Physikalischer Sensor und Herstellungsverfahren Active DE602008001585D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007189657A JP4481323B2 (ja) 2007-07-20 2007-07-20 物理量センサ及びその製造方法

Publications (1)

Publication Number Publication Date
DE602008001585D1 true DE602008001585D1 (de) 2010-08-05

Family

ID=39926441

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008001585T Active DE602008001585D1 (de) 2007-07-20 2008-07-15 Physikalischer Sensor und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US7905149B2 (de)
EP (1) EP2017628B1 (de)
JP (1) JP4481323B2 (de)
DE (1) DE602008001585D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011055734A1 (ja) * 2009-11-04 2011-05-12 ローム株式会社 圧力センサおよび圧力センサの製造方法
JP5298047B2 (ja) 2010-02-26 2013-09-25 日立オートモティブシステムズ株式会社 複合センサの製造方法
JP5463173B2 (ja) 2010-03-12 2014-04-09 日立オートモティブシステムズ株式会社 角速度検出装置
JP2011196966A (ja) * 2010-03-24 2011-10-06 Hitachi Ltd 慣性センサ
JP5350339B2 (ja) * 2010-08-12 2013-11-27 株式会社日立製作所 微小電気機械システムおよびその製造方法
DE102010063857A1 (de) * 2010-12-22 2012-06-28 Robert Bosch Gmbh Mikromechanischer Sensor zur Messung von Drehraten sowie entsprechendes Verfahren
CN102530832B (zh) * 2010-12-27 2014-06-18 上海丽恒光微电子科技有限公司 惯性微机电传感器及其制作方法
US9278849B2 (en) * 2012-06-15 2016-03-08 The Boeing Company Micro-sensor package and associated method of assembling the same
JP6237982B2 (ja) * 2013-04-23 2017-11-29 セイコーエプソン株式会社 物理量センサー、電子機器及び移動体
JP6416704B2 (ja) * 2015-06-22 2018-10-31 日立オートモティブシステムズ株式会社 樹脂封止型センサ装置
JP6401728B2 (ja) * 2016-03-18 2018-10-10 株式会社日立製作所 慣性センサおよびその製造方法
JP7147650B2 (ja) * 2019-03-20 2022-10-05 株式会社デンソー 半導体装置およびその製造方法
DE102021105476B3 (de) * 2021-03-08 2022-03-17 Infineon Technologies Dresden GmbH & Co. KG Verfahren zur herstellung eines halbleiterbauelements und halbleiterbauelement
CN114910101B (zh) * 2022-04-29 2024-04-23 清华大学 多模式薄膜传感器的晶圆级集成方法及电子产品

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3265641B2 (ja) 1992-09-25 2002-03-11 松下電工株式会社 半導体加速度センサ
US5610431A (en) * 1995-05-12 1997-03-11 The Charles Stark Draper Laboratory, Inc. Covers for micromechanical sensors and other semiconductor devices
JPH08316762A (ja) 1995-05-22 1996-11-29 Matsushita Electric Ind Co Ltd 振動子の製造方法
WO1999013343A1 (fr) 1997-09-10 1999-03-18 Matsushita Electric Industrial Co., Ltd. Capteur d'acceleration et procede de fabrication
KR100300527B1 (ko) * 1998-09-03 2001-10-27 윤덕용 밀봉형무선압력측정소자및그제조방법
KR100276429B1 (ko) * 1998-09-07 2000-12-15 정선종 미소 진공 구조체의 제작방법
JP3608456B2 (ja) * 1999-12-08 2005-01-12 セイコーエプソン株式会社 Ｓｏｉ構造のｍｉｓ電界効果トランジスタの製造方法
US6838056B2 (en) * 2002-07-08 2005-01-04 Innovative Micro Technology Method and apparatus for sorting biological cells with a MEMS device
KR100512971B1 (ko) 2003-02-24 2005-09-07 삼성전자주식회사 솔더볼을 이용한 마이크로 전자 기계 시스템의 제조 방법
DE10331322A1 (de) * 2003-07-10 2005-02-03 Epcos Ag Elektronisches Bauelement und Verfahren zur Herstellung
US6936918B2 (en) * 2003-12-15 2005-08-30 Analog Devices, Inc. MEMS device with conductive path through substrate
JP2008046078A (ja) * 2006-08-21 2008-02-28 Hitachi Ltd 微小電気機械システム素子およびその製造方法

Also Published As

Publication number Publication date
EP2017628A1 (de) 2009-01-21
JP2009027016A (ja) 2009-02-05
US20090020419A1 (en) 2009-01-22
US7905149B2 (en) 2011-03-15
JP4481323B2 (ja) 2010-06-16
EP2017628B1 (de) 2010-06-23

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