DE602007003126D1 - Kapazitiver Sensor - Google Patents

Kapazitiver Sensor

Info

Publication number
DE602007003126D1
DE602007003126D1 DE602007003126T DE602007003126T DE602007003126D1 DE 602007003126 D1 DE602007003126 D1 DE 602007003126D1 DE 602007003126 T DE602007003126 T DE 602007003126T DE 602007003126 T DE602007003126 T DE 602007003126T DE 602007003126 D1 DE602007003126 D1 DE 602007003126D1
Authority
DE
Germany
Prior art keywords
capacitive sensor
capacitive
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007003126T
Other languages
English (en)
Inventor
Eiichi Furukubo
Hisakazu Miyajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Panasonic Electric Works Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Electric Works Co Ltd filed Critical Panasonic Electric Works Co Ltd
Publication of DE602007003126D1 publication Critical patent/DE602007003126D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/082Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for two degrees of freedom of movement of a single mass
DE602007003126T 2006-03-28 2007-03-21 Kapazitiver Sensor Active DE602007003126D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006089122A JP4595862B2 (ja) 2006-03-28 2006-03-28 静電容量式センサ

Publications (1)

Publication Number Publication Date
DE602007003126D1 true DE602007003126D1 (de) 2009-12-24

Family

ID=38326211

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007003126T Active DE602007003126D1 (de) 2006-03-28 2007-03-21 Kapazitiver Sensor

Country Status (7)

Country Link
US (1) US7554340B2 (de)
EP (1) EP1840581B1 (de)
JP (1) JP4595862B2 (de)
KR (1) KR100871217B1 (de)
CN (1) CN100568001C (de)
DE (1) DE602007003126D1 (de)
TW (1) TWI324687B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8516891B2 (en) * 2007-01-16 2013-08-27 Analog Devices, Inc. Multi-stage stopper system for MEMS devices
JP4960767B2 (ja) * 2007-05-25 2012-06-27 パナソニック株式会社 変位センサ
JP2009216693A (ja) * 2008-02-13 2009-09-24 Denso Corp 物理量センサ
US8186221B2 (en) * 2009-03-24 2012-05-29 Freescale Semiconductor, Inc. Vertically integrated MEMS acceleration transducer
DE102010039236B4 (de) * 2010-08-12 2023-06-29 Robert Bosch Gmbh Sensoranordnung und Verfahren zum Abgleich einer Sensoranordnung
JP6020793B2 (ja) * 2012-04-02 2016-11-02 セイコーエプソン株式会社 物理量センサーおよび電子機器
US9316666B2 (en) * 2012-11-27 2016-04-19 Murata Manufacturing Co., Ltd. Acceleration sensor having a capacitor array located in the center of an inertial mass
JP6206651B2 (ja) 2013-07-17 2017-10-04 セイコーエプソン株式会社 機能素子、電子機器、および移動体
JP2016042074A (ja) 2014-08-13 2016-03-31 セイコーエプソン株式会社 物理量センサー、電子機器および移動体
JP6413462B2 (ja) * 2014-08-15 2018-10-31 セイコーエプソン株式会社 物理量センサー、物理量センサー装置、電子機器および移動体
JP6279464B2 (ja) * 2014-12-26 2018-02-14 株式会社東芝 センサおよびその製造方法
CN105158582B (zh) * 2015-09-29 2018-03-09 北京工业大学 一种变间距叉指型相邻电容传感器
CN107045951A (zh) * 2016-02-04 2017-08-15 中国电力科学研究院 一种片式电容器元件的电容量测量方法
JP2018179575A (ja) * 2017-04-05 2018-11-15 セイコーエプソン株式会社 物理量センサー、電子機器、および移動体

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3968877B2 (ja) * 1998-07-07 2007-08-29 株式会社デンソー 容量式物理量検出装置
JP2002071708A (ja) 2000-08-29 2002-03-12 Denso Corp 半導体力学量センサ
JP2002131331A (ja) 2000-10-24 2002-05-09 Denso Corp 半導体力学量センサ
JP4174979B2 (ja) 2001-07-13 2008-11-05 松下電工株式会社 加速度センサ
JP2003166999A (ja) * 2001-12-03 2003-06-13 Denso Corp 半導体力学量センサ
JP3969228B2 (ja) 2002-07-19 2007-09-05 松下電工株式会社 機械的変形量検出センサ及びそれを用いた加速度センサ、圧力センサ
EP1491901A1 (de) 2003-06-25 2004-12-29 Matsushita Electric Works, Ltd. Halbleiter-Beschleunigungsaufnehmer und Verfahren zu seiner Herstellung
JP4436096B2 (ja) * 2003-09-10 2010-03-24 パナソニック電工株式会社 静電容量式センサおよびその製造方法
JP2005098891A (ja) 2003-09-25 2005-04-14 Matsushita Electric Works Ltd 静電容量式センサ
KR100513346B1 (ko) * 2003-12-20 2005-09-07 삼성전기주식회사 보정전극을 갖는 정전용량형 가속도계
EP1626283B1 (de) * 2004-08-13 2011-03-23 STMicroelectronics Srl Mikroelektromechanische Struktur, insbesondere Beschleunigungssensor, mit verbesserter Unempfindlichkeit gegenüber thermischen und mechanischen Spannungen

Also Published As

Publication number Publication date
KR100871217B1 (ko) 2008-12-01
JP4595862B2 (ja) 2010-12-08
CN100568001C (zh) 2009-12-09
TW200801519A (en) 2008-01-01
CN101046491A (zh) 2007-10-03
EP1840581A1 (de) 2007-10-03
KR20070097321A (ko) 2007-10-04
US20070273393A1 (en) 2007-11-29
EP1840581B1 (de) 2009-11-11
TWI324687B (en) 2010-05-11
JP2007263741A (ja) 2007-10-11
US7554340B2 (en) 2009-06-30

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Legal Events

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