DE602007014276D1 - Diskreter Stressisolator - Google Patents

Diskreter Stressisolator

Info

Publication number
DE602007014276D1
DE602007014276D1 DE602007014276T DE602007014276T DE602007014276D1 DE 602007014276 D1 DE602007014276 D1 DE 602007014276D1 DE 602007014276 T DE602007014276 T DE 602007014276T DE 602007014276 T DE602007014276 T DE 602007014276T DE 602007014276 D1 DE602007014276 D1 DE 602007014276D1
Authority
DE
Germany
Prior art keywords
stress isolator
discrete stress
discrete
isolator
stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007014276T
Other languages
English (en)
Inventor
Mark H Eskridge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of DE602007014276D1 publication Critical patent/DE602007014276D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
    • B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/07—Interconnects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73257—Bump and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
DE602007014276T 2006-01-06 2007-01-08 Diskreter Stressisolator Active DE602007014276D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/326,916 US8129801B2 (en) 2006-01-06 2006-01-06 Discrete stress isolator attachment structures for MEMS sensor packages

Publications (1)

Publication Number Publication Date
DE602007014276D1 true DE602007014276D1 (de) 2011-06-16

Family

ID=37866158

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007014276T Active DE602007014276D1 (de) 2006-01-06 2007-01-08 Diskreter Stressisolator

Country Status (4)

Country Link
US (1) US8129801B2 (de)
EP (1) EP1806315B1 (de)
JP (1) JP5048344B2 (de)
DE (1) DE602007014276D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7830003B2 (en) * 2007-12-27 2010-11-09 Honeywell International, Inc. Mechanical isolation for MEMS devices
US8096182B2 (en) * 2008-05-29 2012-01-17 Freescale Semiconductor, Inc. Capacitive sensor with stress relief that compensates for package stress
US8499629B2 (en) 2008-10-10 2013-08-06 Honeywell International Inc. Mounting system for torsional suspension of a MEMS device
JP5426906B2 (ja) * 2009-03-10 2014-02-26 パナソニック株式会社 加速度センサ
US8138007B2 (en) 2009-08-26 2012-03-20 Freescale Semiconductor, Inc. MEMS device with stress isolation and method of fabrication
US9686864B2 (en) 2012-07-31 2017-06-20 Hewlett-Packard Development Company, L.P. Device including interposer between semiconductor and substrate
US9663348B1 (en) 2015-11-09 2017-05-30 Nxp Usa, Inc. MEMS device with isolation sub-frame structure
EP3243793B1 (de) 2016-05-10 2018-11-07 ams AG Sensorbaugruppe und anordnung und verfahren zur herstellung einer sensorbaugruppe
EP3301072B1 (de) 2016-09-30 2024-02-21 Sciosense B.V. Halbleiterbauelement und verfahren zur herstellung des halbleiterbauelements
US11312619B1 (en) 2018-10-04 2022-04-26 EngeniusMicro, LLC Methods of manufacture of microisolators and devices for mechanical isolation or mechanical damping of microfabricated inertial sensors

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945765A (en) * 1988-08-31 1990-08-07 Kearfott Guidance & Navigation Corp. Silicon micromachined accelerometer
US5177579A (en) * 1989-04-07 1993-01-05 Ic Sensors, Inc. Semiconductor transducer or actuator utilizing corrugated supports
US5006487A (en) * 1989-07-27 1991-04-09 Honeywell Inc. Method of making an electrostatic silicon accelerometer
DE4107658A1 (de) * 1991-03-09 1992-09-17 Bosch Gmbh Robert Montageverfahren fuer mikromechanische sensoren
JPH06291334A (ja) * 1993-04-05 1994-10-18 Japan Aviation Electron Ind Ltd 加速度センサ
WO1996016435A2 (en) * 1994-11-23 1996-05-30 Philips Electronics N.V. Semiconductor device provided with a microcomponent having a fixed and a movable electrode
JP3555388B2 (ja) * 1997-06-30 2004-08-18 株式会社デンソー 半導体ヨーレートセンサ
DE19800574B4 (de) * 1998-01-09 2013-11-14 Robert Bosch Gmbh Mikromechanisches Bauelement
US6167761B1 (en) * 1998-03-31 2001-01-02 Hitachi, Ltd. And Hitachi Car Engineering Co., Ltd. Capacitance type pressure sensor with capacitive elements actuated by a diaphragm
US6105427A (en) * 1998-07-31 2000-08-22 Litton Systems, Inc. Micro-mechanical semiconductor accelerometer
US20010001550A1 (en) * 1998-11-12 2001-05-24 Janusz Bryzek Integral stress isolation apparatus and technique for semiconductor devices
US6249073B1 (en) * 1999-01-14 2001-06-19 The Regents Of The University Of Michigan Device including a micromechanical resonator having an operating frequency and method of extending same
US6424074B2 (en) * 1999-01-14 2002-07-23 The Regents Of The University Of Michigan Method and apparatus for upconverting and filtering an information signal utilizing a vibrating micromechanical device
US6577040B2 (en) * 1999-01-14 2003-06-10 The Regents Of The University Of Michigan Method and apparatus for generating a signal having at least one desired output frequency utilizing a bank of vibrating micromechanical devices
US6566786B2 (en) * 1999-01-14 2003-05-20 The Regents Of The University Of Michigan Method and apparatus for selecting at least one desired channel utilizing a bank of vibrating micromechanical apparatus
US6600252B2 (en) * 1999-01-14 2003-07-29 The Regents Of The University Of Michigan Method and subsystem for processing signals utilizing a plurality of vibrating micromechanical devices
US6713938B2 (en) * 1999-01-14 2004-03-30 The Regents Of The University Of Michigan Method and apparatus for filtering signals utilizing a vibrating micromechanical resonator
US6593831B2 (en) * 1999-01-14 2003-07-15 The Regents Of The University Of Michigan Method and apparatus for filtering signals in a subsystem including a power amplifier utilizing a bank of vibrating micromechanical apparatus
US6257059B1 (en) * 1999-09-24 2001-07-10 The Charles Stark Draper Laboratory, Inc. Microfabricated tuning fork gyroscope and associated three-axis inertial measurement system to sense out-of-plane rotation
DE19961578A1 (de) * 1999-12-21 2001-06-28 Bosch Gmbh Robert Sensor mit zumindest einer mikromechanischen Struktur und Verfahren zur Herstellung
JP2001227902A (ja) * 2000-02-16 2001-08-24 Mitsubishi Electric Corp 半導体装置
US6628177B2 (en) * 2000-08-24 2003-09-30 The Regents Of The University Of Michigan Micromechanical resonator device and micromechanical device utilizing same
US6569754B2 (en) * 2000-08-24 2003-05-27 The Regents Of The University Of Michigan Method for making a module including a microplatform
US6739190B2 (en) * 2000-08-24 2004-05-25 The Regents Of The University Of Michigan Micromechanical resonator device
JP2002098709A (ja) * 2000-09-26 2002-04-05 Matsushita Electric Works Ltd 半導体加速度センサ
US7381630B2 (en) * 2001-01-02 2008-06-03 The Charles Stark Draper Laboratory, Inc. Method for integrating MEMS device and interposer
JP2004518290A (ja) * 2001-01-24 2004-06-17 ザ リージェンツ オブ ザ ユニバーシティ オブ ミシガン 高ｑのマイクロメカニカルデバイス及びその同調方法
US6509620B2 (en) * 2001-05-31 2003-01-21 Hewlett-Packard Company Flexure coupling block for motion sensor
EP1394555B1 (de) * 2002-08-30 2012-04-25 STMicroelectronics S.r.l. Grenzbeschleunigungsaufnehmer
US6768196B2 (en) * 2002-09-04 2004-07-27 Analog Devices, Inc. Packaged microchip with isolation
JP4342174B2 (ja) * 2002-12-27 2009-10-14 新光電気工業株式会社 電子デバイス及びその製造方法
JP4238724B2 (ja) * 2003-03-27 2009-03-18 株式会社デンソー 半導体装置
JP2004309188A (ja) * 2003-04-02 2004-11-04 Matsushita Electric Works Ltd 半導体加速度センサ
US6930368B2 (en) * 2003-07-31 2005-08-16 Hewlett-Packard Development Company, L.P. MEMS having a three-wafer structure
US6910379B2 (en) * 2003-10-29 2005-06-28 Honeywell International, Inc. Out-of-plane compensation suspension for an accelerometer
DE602005021754D1 (de) * 2004-02-27 2010-07-22 Atlantic Inertial Systems Ltd Beschleunigungsmesser
WO2005086532A2 (en) * 2004-03-01 2005-09-15 Tessera, Inc. Packaged acoustic and electromagnetic transducer chips
JP4847686B2 (ja) * 2004-05-26 2011-12-28 パナソニック電工株式会社 半導体加速度センサ
JP2005337876A (ja) * 2004-05-26 2005-12-08 Matsushita Electric Works Ltd 半導体装置、およびその製造方法

Also Published As

Publication number Publication date
EP1806315A3 (de) 2009-06-03
JP5048344B2 (ja) 2012-10-17
EP1806315B1 (de) 2011-05-04
US8129801B2 (en) 2012-03-06
US20070170525A1 (en) 2007-07-26
EP1806315A2 (de) 2007-07-11
JP2007218902A (ja) 2007-08-30

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