DE602007002494D1 - Einrichtung und verfahren zur datenspeicherung - Google Patents

Einrichtung und verfahren zur datenspeicherung

Info

Publication number
DE602007002494D1
DE602007002494D1 DE602007002494T DE602007002494T DE602007002494D1 DE 602007002494 D1 DE602007002494 D1 DE 602007002494D1 DE 602007002494 T DE602007002494 T DE 602007002494T DE 602007002494 T DE602007002494 T DE 602007002494T DE 602007002494 D1 DE602007002494 D1 DE 602007002494D1
Authority
DE
Germany
Prior art keywords
nanowires
head
tail
notches
along
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007002494T
Other languages
English (en)
Inventor
Russell Paul Cowburn
Dorothee Petit
Dan Read
Oleg Petracic
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ingenia Holdings UK Ltd
Original Assignee
Ingenia Holdings UK Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ingenia Holdings UK Ltd filed Critical Ingenia Holdings UK Ltd
Publication of DE602007002494D1 publication Critical patent/DE602007002494D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0816—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using a rotating or alternating coplanar magnetic field
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Communication Control (AREA)
  • Debugging And Monitoring (AREA)
  • Magnetic Treatment Devices (AREA)
DE602007002494T 2006-05-09 2007-05-04 Einrichtung und verfahren zur datenspeicherung Active DE602007002494D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0609152A GB2438003B (en) 2006-05-09 2006-05-09 Data storage device and method
PCT/GB2007/001650 WO2007132174A1 (en) 2006-05-09 2007-05-04 Data storage device and method

Publications (1)

Publication Number Publication Date
DE602007002494D1 true DE602007002494D1 (de) 2009-10-29

Family

ID=36637150

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007002494T Active DE602007002494D1 (de) 2006-05-09 2007-05-04 Einrichtung und verfahren zur datenspeicherung

Country Status (11)

Country Link
EP (1) EP2016592B1 (de)
JP (1) JP2009536420A (de)
KR (1) KR20090011013A (de)
CN (1) CN101438354A (de)
AT (1) ATE443331T1 (de)
DE (1) DE602007002494D1 (de)
GB (2) GB2438003B (de)
IL (1) IL194830A0 (de)
RU (1) RU2008148301A (de)
TW (1) TW200814070A (de)
WO (1) WO2007132174A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7710769B2 (en) 2007-05-09 2010-05-04 Ingenia Holdings Uk Limited Data storage device and method
CN101681680A (zh) * 2007-05-09 2010-03-24 英根亚控股（英国）有限公司 数据存储设备和方法
FR2930385B1 (fr) * 2008-04-16 2011-10-14 Commissariat Energie Atomique Disositif magnetique pour la realisation d'une "fonction logique".
KR101430170B1 (ko) * 2008-06-16 2014-08-13 삼성전자주식회사 자구벽 이동을 이용한 정보저장장치의 구동방법
GB2465369B (en) * 2008-11-13 2011-01-12 Ingenia Holdings Magnetic data storage device and method
KR101584099B1 (ko) 2009-08-19 2016-01-13 삼성전자주식회사 자성층을 구비한 트랙 및 이를 포함하는 자성소자
US8331125B2 (en) 2009-08-26 2012-12-11 International Business Machines Corporation Array architecture and operation for high density magnetic racetrack memory system
EP2378664A1 (de) * 2010-04-15 2011-10-19 Technische Universität München Magnetvorrichtung
JP2014078637A (ja) * 2012-10-11 2014-05-01 Rohm Co Ltd ホール素子、磁気センサ、および磁気記録装置
US8772889B2 (en) 2012-11-20 2014-07-08 International Business Machines Corporation Magnetic domain wall shift register memory device readout
EP2747086A1 (de) 2012-12-24 2014-06-25 Johannes Gutenberg-Universität Mainz Mittels magnetischer Domänenwandbewegung schaltbare magnetische Vorrichtung und Betriebsverfahren der Vorrichtung
KR102144734B1 (ko) 2013-10-25 2020-08-14 삼성전자 주식회사 반도체 장치 제조 방법
WO2015144049A1 (en) * 2014-03-27 2015-10-01 The Hong Kong University Of Science And Technology Magnetic domain wall filters
JP6397773B2 (ja) 2015-01-30 2018-09-26 東芝メモリ株式会社 磁気記憶装置及び磁気記憶方法
KR101752287B1 (ko) * 2015-03-13 2017-07-03 지스마트 주식회사 투명전광판 설치용 창호 프레임
WO2016198886A1 (en) 2015-06-10 2016-12-15 The University Of Nottingham Magnetic storage devices and methods
US10408896B2 (en) 2017-03-13 2019-09-10 University Of Utah Research Foundation Spintronic devices
JP2021149769A (ja) 2020-03-23 2021-09-27 キオクシア株式会社 メモリシステムおよびシフトレジスタ型メモリ
JP7470599B2 (ja) * 2020-08-19 2024-04-18 Tdk株式会社 配線層、磁壁移動素子および磁気アレイ
US12094646B1 (en) 2023-04-13 2024-09-17 King Saud University Tuning the magnetic behavior of soft magnetic nanowires

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195250A (ja) * 1998-12-24 2000-07-14 Toshiba Corp 磁気メモリ装置
EP1630819B1 (de) * 2002-07-25 2009-01-14 California Institute of Technology Dreidimensionales Speicher-Array
GB0304610D0 (en) * 2003-02-28 2003-04-02 Eastgate Invest Ltd Magnetic logic system
US6834005B1 (en) * 2003-06-10 2004-12-21 International Business Machines Corporation Shiftable magnetic shift register and method of using the same
JP2006005308A (ja) * 2004-06-21 2006-01-05 Victor Co Of Japan Ltd 不揮発性磁気メモリ
US7236386B2 (en) * 2004-12-04 2007-06-26 International Business Machines Corporation System and method for transferring data to and from a magnetic shift register with a shiftable data column
WO2006115275A1 (ja) * 2005-04-26 2006-11-02 Kyoto University Ｍｒａｍおよびその書き込み方法
KR100718153B1 (ko) * 2006-02-17 2007-05-14 삼성전자주식회사 마그네틱 도메인 이동을 이용한 자기메모리

Also Published As

Publication number Publication date
GB0708737D0 (en) 2007-06-13
GB2438062B (en) 2008-08-13
ATE443331T1 (de) 2009-10-15
TW200814070A (en) 2008-03-16
GB2438062A (en) 2007-11-14
GB2438003A (en) 2007-11-14
GB2438003B (en) 2008-05-14
GB0609152D0 (en) 2006-06-21
CN101438354A (zh) 2009-05-20
JP2009536420A (ja) 2009-10-08
KR20090011013A (ko) 2009-01-30
RU2008148301A (ru) 2010-06-20
WO2007132174A1 (en) 2007-11-22
EP2016592A1 (de) 2009-01-21
IL194830A0 (en) 2009-08-03
EP2016592B1 (de) 2009-09-16

Similar Documents

Publication Publication Date Title
DE602007002494D1 (de) Einrichtung und verfahren zur datenspeicherung
Pitzschel et al. Controlled introduction of diameter modulations in arrayed magnetic iron oxide nanotubes
Tsujimoto et al. Oxyfluoride chemistry of layered perovskite compounds
Loboda et al. Limited permeable crack in an interlayer between piezoelectric materials with different zones of electrical saturation and mechanical yielding
TW200742060A (en) Method for making an electronic device including a poled superlattice having a net electrical dipole moment
Jin et al. A worm-inspired robot based on origami structures driven by the magnetic field
Zhang et al. Bio-inspired bianisotropic magneto-sensitive elastomers with excellent multimodal transformation
Peerlinck et al. Artificial Cilia–Bridging the Gap with Nature
You et al. A magneto-active elastomer crawler with peristaltic and caterpillar locomotion patterns
Zhang et al. Nanofabrication and its application in renewable energy
CZ307249B6 (cs) Skelet jádra tvořeného pruty z feromagnetického materiálu
Amiri et al. Reversals and collisions optimize protein exchange in bacterial swarms
Nguyen et al. DNA like-charge attraction and overcharging by divalent counterions in the presence of divalent co-ions
DE602006009635D1 (de) Deskriptoren für dreidimensionale Objekte, deren Verwendung und Verfahren zu deren Erstellung
Patel 2016 Nobel Prizes in physics and chemistry: A materials view
Wei et al. Equilibrium vortex structures of type-II/1 superconducting films with washboard pinning landscapes
Sarkar et al. Dynamics of a curved Fermi-Pasta-Ulam chain: Effects of geometry, long-range interaction, and nonlinear dispersion
Brochier What is... Higher algebra?
Tangarife et al. Physical-chemical properties of M@ Fe3O4 core@ shell nanowires (M= Cu, Co, CoO)
Feng et al. A Route to Two-Dimensional Room-Temperature Organometallic Multiferroics: The Marriage of d–p Spin Coupling and Structural Inversion Symmetry Breaking
Stylianakis Development of photosensitive nanostructured hybrid devices
Tuca et al. Fundamental aspects in surface self-assembly: theoretical implications of molecular polarity and shape
Areddy Computer-aided design of polyhedral DNA nanostructures
Xu et al. Self-assembly of block copolymers on lithographically patterned template with ordered posts
Vogel Mosè interpretato da Savonarola e da Lutero.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition