DE602006011259D1 - Nachbearbeitungsverfahren für Photoresistfilm - Google Patents
Nachbearbeitungsverfahren für PhotoresistfilmInfo
- Publication number
- DE602006011259D1 DE602006011259D1 DE602006011259T DE602006011259T DE602006011259D1 DE 602006011259 D1 DE602006011259 D1 DE 602006011259D1 DE 602006011259 T DE602006011259 T DE 602006011259T DE 602006011259 T DE602006011259 T DE 602006011259T DE 602006011259 D1 DE602006011259 D1 DE 602006011259D1
- Authority
- DE
- Germany
- Prior art keywords
- post
- processing method
- photoresist film
- photoresist
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005335518A JP4597844B2 (ja) | 2005-11-21 | 2005-11-21 | フォトレジスト膜のリワーク方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006011259D1 true DE602006011259D1 (de) | 2010-02-04 |
Family
ID=37726698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006011259T Active DE602006011259D1 (de) | 2005-11-21 | 2006-11-09 | Nachbearbeitungsverfahren für Photoresistfilm |
Country Status (6)
Country | Link |
---|---|
US (1) | US7638268B2 (de) |
EP (1) | EP1788437B1 (de) |
JP (1) | JP4597844B2 (de) |
KR (1) | KR101116935B1 (de) |
DE (1) | DE602006011259D1 (de) |
TW (1) | TWI349836B (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE602007000498D1 (de) | 2006-04-11 | 2009-03-12 | Shinetsu Chemical Co | Siliziumhaltige, folienbildende Zusammensetzung, siliziumhaltige Folie, siliziumhaltiges, folientragendes Substrat und Strukturierungsverfahren |
US7855043B2 (en) * | 2006-06-16 | 2010-12-21 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method |
US20070298349A1 (en) * | 2006-06-22 | 2007-12-27 | Ruzhi Zhang | Antireflective Coating Compositions Comprising Siloxane Polymer |
US7704670B2 (en) * | 2006-06-22 | 2010-04-27 | Az Electronic Materials Usa Corp. | High silicon-content thin film thermosets |
CN101320683A (zh) * | 2007-02-08 | 2008-12-10 | 三星电子株式会社 | 再加工半导体衬底的方法和形成半导体器件的图案的方法 |
US8026040B2 (en) * | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
CN101622297A (zh) * | 2007-02-26 | 2010-01-06 | Az电子材料美国公司 | 制备硅氧烷聚合物的方法 |
KR101523393B1 (ko) | 2007-02-27 | 2015-05-27 | 이엠디 퍼포먼스 머티리얼스 코프. | 규소를 주성분으로 하는 반사 방지 코팅 조성물 |
JP5631738B2 (ja) * | 2007-11-30 | 2014-11-26 | オプティチューン オサケ ユキチュア | 新規シロキサンポリマー組成物 |
US20090142694A1 (en) * | 2007-11-30 | 2009-06-04 | Braggone Oy | Siloxane polymer compositions and methods of using the same |
US8288271B2 (en) * | 2009-11-02 | 2012-10-16 | International Business Machines Corporation | Method for reworking antireflective coating over semiconductor substrate |
JP2014007306A (ja) * | 2012-06-25 | 2014-01-16 | Toshiba Corp | パターン形成方法 |
CN103345130B (zh) * | 2013-06-27 | 2016-01-27 | 上海华力微电子有限公司 | 光刻返工刻蚀工艺 |
JP7123668B2 (ja) * | 2017-08-04 | 2022-08-23 | 信越化学工業株式会社 | レジスト多層膜付き基板及びパターン形成方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5100503A (en) * | 1990-09-14 | 1992-03-31 | Ncr Corporation | Silica-based anti-reflective planarizing layer |
US6087064A (en) * | 1998-09-03 | 2000-07-11 | International Business Machines Corporation | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method |
EP1160843A1 (de) | 2000-05-30 | 2001-12-05 | Semiconductor 300 GmbH & Co. KG | Planarisierende Antireflektionsschicht mit verbesserter Lichtabsorption |
US7011935B2 (en) * | 2002-09-19 | 2006-03-14 | Arch Specialty Chemicals, Inc. | Method for the removal of an imaging layer from a semiconductor substrate stack |
JP3914492B2 (ja) * | 2002-11-27 | 2007-05-16 | 東京応化工業株式会社 | シリコン含有2層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法 |
JP3914493B2 (ja) * | 2002-11-27 | 2007-05-16 | 東京応化工業株式会社 | 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法 |
JP4369203B2 (ja) * | 2003-03-24 | 2009-11-18 | 信越化学工業株式会社 | 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法 |
US20040220066A1 (en) * | 2003-05-01 | 2004-11-04 | Rohm And Haas Electronic Materials, L.L.C. | Stripper |
TW200503066A (en) * | 2003-07-07 | 2005-01-16 | Macronix Int Co Ltd | Process for reworking semiconductor patterned photoresist layer |
JP2005173552A (ja) * | 2003-11-20 | 2005-06-30 | Tokyo Ohka Kogyo Co Ltd | リソグラフィー用下層膜形成材料およびこれを用いた配線形成方法 |
TWI291081B (en) * | 2004-11-05 | 2007-12-11 | Echem Solutions Corp | Photoresist stripper composition |
TWI323391B (en) * | 2006-03-21 | 2010-04-11 | Daxin Material Corp | Remover solution composition and use thereof |
-
2005
- 2005-11-21 JP JP2005335518A patent/JP4597844B2/ja active Active
-
2006
- 2006-11-09 US US11/594,937 patent/US7638268B2/en not_active Expired - Fee Related
- 2006-11-09 DE DE602006011259T patent/DE602006011259D1/de active Active
- 2006-11-09 EP EP06255764A patent/EP1788437B1/de not_active Not-in-force
- 2006-11-20 KR KR1020060114275A patent/KR101116935B1/ko active IP Right Grant
- 2006-11-21 TW TW095143061A patent/TWI349836B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2007140252A (ja) | 2007-06-07 |
US7638268B2 (en) | 2009-12-29 |
JP4597844B2 (ja) | 2010-12-15 |
TWI349836B (en) | 2011-10-01 |
TW200739266A (en) | 2007-10-16 |
KR101116935B1 (ko) | 2012-03-12 |
US20070117411A1 (en) | 2007-05-24 |
EP1788437A3 (de) | 2008-11-26 |
KR20070053621A (ko) | 2007-05-25 |
EP1788437B1 (de) | 2009-12-23 |
EP1788437A2 (de) | 2007-05-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE602006011259D1 (de) | Nachbearbeitungsverfahren für Photoresistfilm | |
DE602006013447D1 (de) | Uerverfahren für leistungsabgabevorrichtung | |
SE0701325L (sv) | Metod | |
DE602006016053D1 (de) | Entwicklungsgerät für Bildformungsapparat | |
DE602007002929D1 (de) | Lichtempfindliche Zusammensetzung | |
DE602006003681D1 (de) | Toner | |
DE602005017598D1 (de) | Optische elementeinheit für belichtungsprozesse | |
DE602006020221D1 (de) | Toner | |
DE602007008787D1 (de) | Spannvorrichtung | |
DE602006000742D1 (de) | Herstellungsverfahren für piezoelektrisches Bauelement | |
NL1036290A1 (nl) | Lithographic apparatus. | |
DE602006014117D1 (de) | Antriebssystem für landeklappe | |
DE602007005822D1 (de) | Herstellungsverfahren für halbleiterbauelemente | |
FI20065363A0 (fi) | Erotusmenetelmä | |
DE112007001674A5 (de) | Spannvorrichtung | |
DK1931998T3 (da) | Fremgangsmåde til kvantificering af allergener | |
DE602006017336D1 (de) | Prozessverbindung für prozessdiagnostik | |
DE602006004904D1 (de) | Drucker für Streifen | |
NL1036308A1 (nl) | Lithographic method. | |
DE602006001677D1 (de) | Tonerverfahren | |
DK1955066T3 (da) | Membran-assay-fremgangsmåde | |
DE502007005743D1 (de) | Stellantrieb für ein Stellorgan | |
DK2062053T3 (da) | Forbedret immunoanalysefremgangsmåde | |
DE602006010318D1 (de) | Tonerverfahren | |
BRPI0714809A2 (pt) | faixa para substratos de clichê litográfico. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |