DE602006005134D1 - Magnetische Tunnelübergangszelle für Logikschaltung und Betriebsverfahren dafür - Google Patents

Magnetische Tunnelübergangszelle für Logikschaltung und Betriebsverfahren dafür

Info

Publication number
DE602006005134D1
DE602006005134D1 DE602006005134T DE602006005134T DE602006005134D1 DE 602006005134 D1 DE602006005134 D1 DE 602006005134D1 DE 602006005134 T DE602006005134 T DE 602006005134T DE 602006005134 T DE602006005134 T DE 602006005134T DE 602006005134 D1 DE602006005134 D1 DE 602006005134D1
Authority
DE
Germany
Prior art keywords
logic circuitry
tunnel junction
magnetic tunnel
junction cell
operation therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006005134T
Other languages
English (en)
Inventor
Tae-Wan Kim
Kee-Won Kim
Hyung-Soon Shin
Seung-Jun Lee
In-Jun Hwang
Young-Jin Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602006005134D1 publication Critical patent/DE602006005134D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/18—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using galvano-magnetic devices, e.g. Hall-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H03K19/21—EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Hall/Mr Elements (AREA)
  • Logic Circuits (AREA)
DE602006005134T 2006-02-22 2006-08-11 Magnetische Tunnelübergangszelle für Logikschaltung und Betriebsverfahren dafür Active DE602006005134D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060017060A KR100682967B1 (ko) 2006-02-22 2006-02-22 자기터널접합 셀을 이용한 배타적 논리합 논리회로 및 상기논리회로의 구동 방법

Publications (1)

Publication Number Publication Date
DE602006005134D1 true DE602006005134D1 (de) 2009-03-26

Family

ID=38050068

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006005134T Active DE602006005134D1 (de) 2006-02-22 2006-08-11 Magnetische Tunnelübergangszelle für Logikschaltung und Betriebsverfahren dafür

Country Status (5)

Country Link
US (1) US7439770B2 (de)
EP (1) EP1826770B1 (de)
JP (1) JP5221043B2 (de)
KR (1) KR100682967B1 (de)
DE (1) DE602006005134D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7397277B2 (en) * 2005-10-17 2008-07-08 Northern Lights Semiconductor Corp. Magnetic transistor circuit with the EXOR function
JP2009059884A (ja) * 2007-08-31 2009-03-19 Tokyo Institute Of Technology 電子回路
KR100961723B1 (ko) 2008-02-18 2010-06-10 이화여자대학교 산학협력단 스핀 토크 변환을 이용한 자기터널접합 소자를 사용한ｘｏｒ 논리 연산장치
JP4516137B2 (ja) * 2008-03-27 2010-08-04 株式会社東芝 半導体集積回路
JP5603049B2 (ja) * 2009-10-28 2014-10-08 国立大学法人東北大学 電子回路
KR20110057601A (ko) 2009-11-24 2011-06-01 삼성전자주식회사 비휘발성 논리 회로, 상기 비휘발성 논리 회로를 포함하는 집적 회로 및 상기 집적 회로의 동작 방법
JP5874647B2 (ja) * 2011-01-06 2016-03-02 日本電気株式会社 不揮発論理演算デバイス
FR3031643B1 (fr) * 2015-01-09 2018-03-02 Easybroadcast Procede de gestion et de fonctionnement protocolaire d'un reseau de distribution de contenu
US10333523B2 (en) * 2015-05-28 2019-06-25 Intel Corporation Exclusive-OR logic device with spin orbit torque effect
US9503085B1 (en) * 2015-09-30 2016-11-22 The Research Foundation For The State University Of New York Exclusive-OR gate using magneto-electric tunnel junctions
US9692413B2 (en) 2015-09-30 2017-06-27 The Research Foundation For The State University Of New York Configurable exclusive-OR / exclusive-NOR gate using magneto-electric tunnel junctions
KR101843917B1 (ko) 2016-09-06 2018-03-30 한국과학기술연구원 스핀-궤도 결합의 차이를 이용한 상보성 논리 소자 및 그 제조 방법
KR102582672B1 (ko) 2016-11-01 2023-09-25 삼성전자주식회사 자기 터널 접합 소자를 포함하는 논리 회로
JP6545853B1 (ja) * 2018-03-20 2019-07-17 株式会社東芝 磁気デバイス
JP7311733B2 (ja) * 2019-10-17 2023-07-20 Ｙｏｄａ－Ｓ株式会社 磁気デバイス及び演算装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6034887A (en) * 1998-08-05 2000-03-07 International Business Machines Corporation Non-volatile magnetic memory cell and devices
US6391483B1 (en) * 1999-03-30 2002-05-21 Carnegie Mellon University Magnetic device and method of forming same
US6498747B1 (en) * 2002-02-08 2002-12-24 Infineon Technologies Ag Magnetoresistive random access memory (MRAM) cross-point array with reduced parasitic effects
US6783994B2 (en) * 2002-04-26 2004-08-31 Freescale Semiconductor, Inc. Method of fabricating a self-aligned magnetic tunneling junction and via contact
US6653704B1 (en) * 2002-09-24 2003-11-25 International Business Machines Corporation Magnetic memory with tunnel junction memory cells and phase transition material for controlling current to the cells
US7027319B2 (en) * 2003-06-19 2006-04-11 Hewlett-Packard Development Company, L.P. Retrieving data stored in a magnetic integrated memory
US6987692B2 (en) * 2003-10-03 2006-01-17 Hewlett-Packard Development Company, L.P. Magnetic memory having angled third conductor
US20050269612A1 (en) * 2004-05-11 2005-12-08 Integrated Magnetoelectronics Solid-state component based on current-induced magnetization reversal

Also Published As

Publication number Publication date
EP1826770A1 (de) 2007-08-29
KR100682967B1 (ko) 2007-02-15
JP2007228574A (ja) 2007-09-06
US7439770B2 (en) 2008-10-21
EP1826770B1 (de) 2009-02-11
JP5221043B2 (ja) 2013-06-26
US20080013369A1 (en) 2008-01-17

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