DE602005018839D1 - Hochreine granulöse Siliziumzusammensetzung - Google Patents

Hochreine granulöse Siliziumzusammensetzung

Info

Publication number
DE602005018839D1
DE602005018839D1 DE602005018839T DE602005018839T DE602005018839D1 DE 602005018839 D1 DE602005018839 D1 DE 602005018839D1 DE 602005018839 T DE602005018839 T DE 602005018839T DE 602005018839 T DE602005018839 T DE 602005018839T DE 602005018839 D1 DE602005018839 D1 DE 602005018839D1
Authority
DE
Germany
Prior art keywords
high purity
silicon composition
granular silicon
purity granular
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005018839T
Other languages
English (en)
Inventor
Jameel Ibrahim
Melinda Gayle Ivey
Timothy Dinh Truong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE602005018839D1 publication Critical patent/DE602005018839D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
DE602005018839T 2004-11-12 2005-11-10 Hochreine granulöse Siliziumzusammensetzung Active DE602005018839D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/988,179 US20060105105A1 (en) 2004-11-12 2004-11-12 High purity granular silicon and method of manufacturing the same

Publications (1)

Publication Number Publication Date
DE602005018839D1 true DE602005018839D1 (de) 2010-02-25

Family

ID=35976382

Family Applications (2)

Application Number Title Priority Date Filing Date
DE602005025930T Active DE602005025930D1 (de) 2004-11-12 2005-11-10 Hochreines granulöses silicium und herstellungsverfahren dafür
DE602005018839T Active DE602005018839D1 (de) 2004-11-12 2005-11-10 Hochreine granulöse Siliziumzusammensetzung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE602005025930T Active DE602005025930D1 (de) 2004-11-12 2005-11-10 Hochreines granulöses silicium und herstellungsverfahren dafür

Country Status (8)

Country Link
US (2) US20060105105A1 (de)
EP (4) EP1833759B1 (de)
JP (2) JP5238258B2 (de)
KR (3) KR101370104B1 (de)
CN (2) CN101734664B (de)
DE (2) DE602005025930D1 (de)
TW (2) TW201122144A (de)
WO (1) WO2006062660A2 (de)

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US7789331B2 (en) * 2006-09-06 2010-09-07 Integrated Photovoltaics, Inc. Jet mill producing fine silicon powder
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DE102008036143A1 (de) 2008-08-01 2010-02-04 Berlinsolar Gmbh Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium
CN103058194B (zh) * 2008-09-16 2015-02-25 储晞 生产高纯颗粒硅的反应器
US8168123B2 (en) * 2009-02-26 2012-05-01 Siliken Chemicals, S.L. Fluidized bed reactor for production of high purity silicon
TWI454309B (zh) * 2009-04-20 2014-10-01 Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd 用於將反應排出氣體冷卻之方法及系統
JP2012523963A (ja) 2009-04-20 2012-10-11 エーイー ポリシリコン コーポレーション ケイ化物がコーティングされた金属表面を有する反応器
DE102010040293A1 (de) * 2010-09-06 2012-03-08 Wacker Chemie Ag Verfahren zur Herstellung von polykristallinem Silicium
US20120148728A1 (en) * 2010-12-09 2012-06-14 Siliken Sa Methods and apparatus for the production of high purity silicon
TWI580825B (zh) 2012-01-27 2017-05-01 Ｍｅｍｃ新加坡有限公司 藉由定向固化作用製備鑄態矽之方法
RU2492914C2 (ru) * 2012-04-03 2013-09-20 Федеральное государственное бюджетное учреждение науки Институт высокотемпературной электрохимии Уральского отделения Российской Академии наук Молекулярный фильтр для извлечения гелия из гелийсодержащих газовых смесей
DE102012206439A1 (de) * 2012-04-19 2013-10-24 Wacker Chemie Ag Polykristallines Siliciumgranulat und seine Herstellung
US8875728B2 (en) 2012-07-12 2014-11-04 Siliken Chemicals, S.L. Cooled gas distribution plate, thermal bridge breaking system, and related methods
CN104583122B (zh) 2012-08-29 2017-09-05 赫姆洛克半导体运营有限责任公司 锥形流化床反应器及其使用方法
WO2014064892A1 (ja) 2012-10-26 2014-05-01 パナソニック株式会社 端末装置、基地局装置、受信方法及び送信方法
US8833564B1 (en) 2013-03-13 2014-09-16 Sunedison Semiconductor Limited Systems and methods for reducing dust in granular material
CN103213989B (zh) * 2013-03-19 2014-12-31 浙江精功新材料技术有限公司 一种多晶硅颗粒制备系统及制备方法
US10525430B2 (en) 2013-12-26 2020-01-07 Bruce Hazeltine Draft tube fluidized bed reactor for deposition of granular silicon
DE102014221928A1 (de) 2014-10-28 2016-04-28 Wacker Chemie Ag Wirbelschichtreaktor und Verfahren zur Herstellung von polykristallinem Siliciumgranulat
US9440262B2 (en) 2014-11-07 2016-09-13 Rec Silicon Inc Apparatus and method for silicon powder management
CA2972186A1 (en) * 2014-12-23 2016-06-30 Sitec Gmbh Mechanically fluidized deposition systems and methods
US10287171B2 (en) 2016-05-05 2019-05-14 Rec Silicon Inc Tumbling device for the separation of granular polysilicon and polysilicon powder
US9682404B1 (en) 2016-05-05 2017-06-20 Rec Silicon Inc Method and apparatus for separating fine particulate material from a mixture of coarse particulate material and fine particulate material
US10407310B2 (en) 2017-01-26 2019-09-10 Rec Silicon Inc System for reducing agglomeration during annealing of flowable, finely divided solids
WO2019079879A1 (en) 2017-10-27 2019-05-02 Kevin Allan Dooley Inc. SYSTEM AND METHOD FOR PRODUCING HIGH-PURITY SILICON
CN109529732B (zh) * 2018-12-24 2020-01-10 亚洲硅业（青海）有限公司 一种流化处理系统

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US4314525A (en) * 1980-03-03 1982-02-09 California Institute Of Technology Fluidized bed silicon deposition from silane
US4444811A (en) * 1980-03-03 1984-04-24 California Institute Of Technology Fluidized bed silicon deposition from silane
US4424199A (en) * 1981-12-11 1984-01-03 Union Carbide Corporation Fluid jet seed particle generator for silane pyrolysis reactor
US4691866A (en) * 1985-11-08 1987-09-08 Ethyl Corporation Generation of seed particles
US4857173A (en) * 1986-01-31 1989-08-15 Ethyl Corporation Particle classifier and method
US4883687A (en) * 1986-08-25 1989-11-28 Ethyl Corporation Fluid bed process for producing polysilicon
US4820587A (en) * 1986-08-25 1989-04-11 Ethyl Corporation Polysilicon produced by a fluid bed process
US4784840A (en) * 1986-08-25 1988-11-15 Ethyl Corporation Polysilicon fluid bed process and product
JPH0755810B2 (ja) * 1987-03-14 1995-06-14 三井東圧化学株式会社 高純度粒状珪素とその製造方法
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US5242671A (en) * 1988-10-11 1993-09-07 Ethyl Corporation Process for preparing polysilicon with diminished hydrogen content by using a fluidized bed with a two-step heating process
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US5236547A (en) * 1990-09-25 1993-08-17 Kabushiki Kaisha Toshiba Method of forming a pattern in semiconductor device manufacturing process
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JP3325900B2 (ja) * 1996-10-14 2002-09-17 川崎製鉄株式会社 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法
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US6827786B2 (en) * 2000-12-26 2004-12-07 Stephen M Lord Machine for production of granular silicon
CN1171784C (zh) * 2002-03-05 2004-10-20 浙江大学 纳米硅管的制备方法
DE10359587A1 (de) * 2003-12-18 2005-07-14 Wacker-Chemie Gmbh Staub- und porenfreies hochreines Polysiliciumgranulat

Also Published As

Publication number Publication date
EP1833759A2 (de) 2007-09-19
TWI338723B (en) 2011-03-11
EP1900685A1 (de) 2008-03-19
CN101076493A (zh) 2007-11-21
CN101076493B (zh) 2010-05-05
WO2006062660A3 (en) 2007-08-02
TW201122144A (en) 2011-07-01
KR20120041268A (ko) 2012-04-30
EP1900684B1 (de) 2010-01-06
EP1900686A1 (de) 2008-03-19
US20080187481A1 (en) 2008-08-07
EP1900686B1 (de) 2012-02-08
KR20110019425A (ko) 2011-02-25
EP1833759B1 (de) 2011-01-12
TW200622026A (en) 2006-07-01
JP2008519754A (ja) 2008-06-12
JP2012236768A (ja) 2012-12-06
JP5238258B2 (ja) 2013-07-17
KR20070085338A (ko) 2007-08-27
DE602005025930D1 (de) 2011-02-24
EP1900684A1 (de) 2008-03-19
US20060105105A1 (en) 2006-05-18
CN101734664A (zh) 2010-06-16
WO2006062660A2 (en) 2006-06-15
KR101321675B1 (ko) 2013-10-22
CN101734664B (zh) 2012-10-31
KR101370104B1 (ko) 2014-03-04
JP5623478B2 (ja) 2014-11-12

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