DE602005016156D1 - Hybride ESD-Klemme - Google Patents

Hybride ESD-Klemme

Info

Publication number
DE602005016156D1
DE602005016156D1 DE602005016156T DE602005016156T DE602005016156D1 DE 602005016156 D1 DE602005016156 D1 DE 602005016156D1 DE 602005016156 T DE602005016156 T DE 602005016156T DE 602005016156 T DE602005016156 T DE 602005016156T DE 602005016156 D1 DE602005016156 D1 DE 602005016156D1
Authority
DE
Germany
Prior art keywords
dmos
ground
current
resistor
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602005016156T
Other languages
English (en)
Inventor
Koen Reynders
Peter Moens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
On Semiconductor Belgium BVBA
Original Assignee
AMI Semiconductor Belgium BVBA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AMI Semiconductor Belgium BVBA filed Critical AMI Semiconductor Belgium BVBA
Publication of DE602005016156D1 publication Critical patent/DE602005016156D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Developing Agents For Electrophotography (AREA)
DE602005016156T 2005-01-07 2005-01-07 Hybride ESD-Klemme Expired - Lifetime DE602005016156D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/BE2005/000003 WO2006072148A1 (en) 2005-01-07 2005-01-07 Hybrid esd clamp

Publications (1)

Publication Number Publication Date
DE602005016156D1 true DE602005016156D1 (de) 2009-10-01

Family

ID=34960391

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005016156T Expired - Lifetime DE602005016156D1 (de) 2005-01-07 2005-01-07 Hybride ESD-Klemme

Country Status (6)

Country Link
US (1) US7804670B2 (de)
EP (1) EP1834359B1 (de)
AT (1) ATE440381T1 (de)
DE (1) DE602005016156D1 (de)
IL (1) IL184440A (de)
WO (1) WO2006072148A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8218276B2 (en) * 2006-05-31 2012-07-10 Alpha and Omega Semiconductor Inc. Transient voltage suppressor (TVS) with improved clamping voltage
JP2010278188A (ja) * 2009-05-28 2010-12-09 Renesas Electronics Corp 半導体集積回路装置
US20120154956A1 (en) * 2010-12-17 2012-06-21 National Semiconductor Corporation Self protected snapback device driven by driver circuitry using high side pull-up avalanche diode
CN102157518B (zh) 2011-01-07 2012-05-30 北方工业大学 单片集成的新型双重突波保护器件及其制作方法
EP2515334B1 (de) 2011-04-20 2013-11-20 Nxp B.V. ESD-Schutzschaltung
JP5801609B2 (ja) * 2011-06-03 2015-10-28 ルネサスエレクトロニクス株式会社 保護回路素子
US8436418B2 (en) * 2011-06-20 2013-05-07 United Microelectronics Corp. High-voltage semiconductor device with electrostatic discharge protection
US8630072B2 (en) 2011-07-29 2014-01-14 Silicon Laboratories Inc. Circuits including a diode string comprised of bipolar stages having an adjustable pseudo beta for ESD protection
US8520347B2 (en) 2011-07-29 2013-08-27 Silicon Laboratories Inc. Circuit for ESD protection including dynamically terminated diode strings comprised of bipolar devices
US8854103B2 (en) * 2012-03-28 2014-10-07 Infineon Technologies Ag Clamping circuit
CN103578992B (zh) * 2012-07-25 2016-01-13 北大方正集团有限公司 一种集成vdmos芯片及其制作方法
KR101926607B1 (ko) 2012-09-28 2018-12-07 삼성전자 주식회사 클램핑 회로, 이를 포함하는 반도체 장치 및 반도체 장치의 클램핑 방법
KR102016986B1 (ko) 2013-01-25 2019-09-02 삼성전자주식회사 엘디모스 트랜지스터 기반의 다이오드 및 이를 포함하는 정전기 방전 보호 회로
KR102495452B1 (ko) 2016-06-29 2023-02-02 삼성전자주식회사 반도체 장치
US10276558B1 (en) 2017-10-30 2019-04-30 International Business Machines Corporation Electrostatic discharge protection using vertical fin CMOS technology
TWI804736B (zh) * 2020-03-25 2023-06-11 立錡科技股份有限公司 具有橫向絕緣閘極雙極性電晶體之功率元件及其製造方法
US11532610B2 (en) 2020-06-24 2022-12-20 Amazing Microelectronic Corp. Electrostatic discharge protection structure and electrostatic discharge protection circuit with low parasitic capacitance thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630162A (en) 1984-07-31 1986-12-16 Texas Instruments Incorporated ESD input protection circuit
FR2698486B1 (fr) * 1992-11-24 1995-03-10 Sgs Thomson Microelectronics Structure de protection contre les surtensions directes pour composant semiconducteur vertical.
US5528188A (en) * 1995-03-13 1996-06-18 International Business Machines Corporation Electrostatic discharge suppression circuit employing low-voltage triggering silicon-controlled rectifier
US5917220A (en) 1996-12-31 1999-06-29 Stmicroelectronics, Inc. Integrated circuit with improved overvoltage protection
US5982217A (en) * 1997-02-19 1999-11-09 Texas Instruments Incorporated PNP driven NMOS ESD protection circuit
US6064249A (en) 1997-06-20 2000-05-16 Texas Instruments Incorporated Lateral DMOS design for ESD protection
TW373316B (en) * 1998-01-09 1999-11-01 Winbond Electronic Corp Electrostatic discharge protect circuit having erasable coding ROM device
ATE456861T1 (de) * 1999-06-01 2010-02-15 Imec Esd-schutz-bauteil für mittlere triggerspannung
JP2001358297A (ja) * 2000-06-14 2001-12-26 Nec Corp 静電保護回路
US7224560B2 (en) * 2003-02-13 2007-05-29 Medtronic, Inc. Destructive electrical transient protection
US6693339B1 (en) 2003-03-14 2004-02-17 Motorola, Inc. Semiconductor component and method of manufacturing same

Also Published As

Publication number Publication date
EP1834359B1 (de) 2009-08-19
US7804670B2 (en) 2010-09-28
ATE440381T1 (de) 2009-09-15
EP1834359A1 (de) 2007-09-19
IL184440A (en) 2012-01-31
US20090268357A1 (en) 2009-10-29
WO2006072148A1 (en) 2006-07-13
IL184440A0 (en) 2007-10-31

Similar Documents

Publication Publication Date Title
IL184440A0 (en) Hybrid esd clamp
JP3926975B2 (ja) スタック型ｍｏｓトランジスタ保護回路
CN102456685B (zh) 高压静电保护器件
US6128171A (en) Gate-coupled structure for enhanced ESD input/output pad protection in CMOS ICs
CN103258814B (zh) 一种集成电路芯片esd防护用ldmos scr器件
TW200739876A (en) Electrostatic discharge protection device
WO2003003464A3 (en) Hv-soi ldmos device with integrated diode to improve reliability and avalanche ruggedness
CN101339941B (zh) 一种静电放电保护电路
US9704849B2 (en) Electrostatic discharge protection device structures and methods of manufacture
US8362564B2 (en) Isolated epitaxial modulation device
US20130182357A1 (en) Electrostatic Discharge Protection Circuit Having Buffer Stage FET with Thicker Gate Oxide than Common-Source FET
WO2008039549A3 (en) Symmetric blocking transient voltage suppressor (tvs) using bipolar transistor base snatch
TWI813465B (zh) 具單閘極之雙向GaN場效電晶體
US20120075757A1 (en) Circuit with esd protection for a switching regulator
US10063048B2 (en) Dynamic trigger voltage control for an ESD protection device
KR101016964B1 (ko) 정전기 방전 보호 회로
TW200618286A (en) Semiconductor device
US20150085409A1 (en) Active esd protection circuit with blocking diode
US8526147B2 (en) High voltage tolerant SCR clamp with avalanche diode triggering circuit
US6646840B1 (en) Internally triggered electrostatic device clamp with stand-off voltage
TWI257165B (en) Electrostatic discharge protection device
US9344078B1 (en) Inverse current protection circuit sensed with vertical source follower
SE0302296D0 (sv) Device for ESD protection of an integrated circuit
US7405914B2 (en) Electrostatic discharge protection circuit
US12249602B2 (en) Electrostatic discharge protection circuit

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: ON SEMICONDUCTOR BELGIUM BVBA, QUDENAARDE, BE

8364 No opposition during term of opposition