DE602005007540D1 - Verlustarme induktive Vorrichtung und Verfahren zu ihrer Herstellung - Google Patents

Verlustarme induktive Vorrichtung und Verfahren zu ihrer Herstellung

Info

Publication number
DE602005007540D1
DE602005007540D1 DE602005007540T DE602005007540T DE602005007540D1 DE 602005007540 D1 DE602005007540 D1 DE 602005007540D1 DE 602005007540 T DE602005007540 T DE 602005007540T DE 602005007540 T DE602005007540 T DE 602005007540T DE 602005007540 D1 DE602005007540 D1 DE 602005007540D1
Authority
DE
Germany
Prior art keywords
production
low
inductive device
loss inductive
loss
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005007540T
Other languages
English (en)
Inventor
Moon-Chul Lee
Hyung Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602005007540D1 publication Critical patent/DE602005007540D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/02—Fixed inductances of the signal type  without magnetic core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H01F2017/002—Details of via holes for interconnecting the layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/008—Electric or magnetic shielding of printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/02—Casings
    • H01F27/027—Casings specially adapted for combination of signal type inductors or transformers with electronic circuits, e.g. mounting on printed circuit boards
DE602005007540T 2004-07-20 2005-07-06 Verlustarme induktive Vorrichtung und Verfahren zu ihrer Herstellung Active DE602005007540D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040056468A KR100548388B1 (ko) 2004-07-20 2004-07-20 저손실 인덕터소자 및 그의 제조방법

Publications (1)

Publication Number Publication Date
DE602005007540D1 true DE602005007540D1 (de) 2008-07-31

Family

ID=34937787

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005007540T Active DE602005007540D1 (de) 2004-07-20 2005-07-06 Verlustarme induktive Vorrichtung und Verfahren zu ihrer Herstellung

Country Status (5)

Country Link
US (1) US20060017539A1 (de)
EP (1) EP1619697B1 (de)
JP (1) JP4383392B2 (de)
KR (1) KR100548388B1 (de)
DE (1) DE602005007540D1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7255801B2 (en) * 2004-04-08 2007-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Deep submicron CMOS compatible suspending inductor
KR100947933B1 (ko) * 2007-08-28 2010-03-15 주식회사 동부하이텍 인덕터 및 그 제조 방법
JP4815623B2 (ja) * 2007-09-07 2011-11-16 三菱電機株式会社 高周波受動素子およびその製造方法
CN101894861A (zh) * 2009-05-22 2010-11-24 联发科技股份有限公司 半导体装置
US8164159B1 (en) * 2009-07-18 2012-04-24 Intergrated Device Technologies, inc. Semiconductor resonators with electromagnetic and environmental shielding and methods of forming same
DE102009045931B4 (de) * 2009-10-22 2015-06-03 Adidas Ag Bekleidung
US9431473B2 (en) 2012-11-21 2016-08-30 Qualcomm Incorporated Hybrid transformer structure on semiconductor devices
US10002700B2 (en) * 2013-02-27 2018-06-19 Qualcomm Incorporated Vertical-coupling transformer with an air-gap structure
US9634645B2 (en) 2013-03-14 2017-04-25 Qualcomm Incorporated Integration of a replica circuit and a transformer above a dielectric substrate
US9449753B2 (en) 2013-08-30 2016-09-20 Qualcomm Incorporated Varying thickness inductor
US9906318B2 (en) 2014-04-18 2018-02-27 Qualcomm Incorporated Frequency multiplexer
JP6405742B2 (ja) 2014-06-26 2018-10-17 富士通株式会社 コイル部品、及びコイル部品の製造方法
JP6380028B2 (ja) * 2014-11-13 2018-08-29 富士通株式会社 インダクタの製造方法
KR102113541B1 (ko) 2018-08-07 2020-05-21 주식회사 이엠따블유 고주파 저손실 전극
DE102020130092A1 (de) * 2020-11-13 2022-05-19 Wipotec Gmbh Magnet-Spule-System

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JPH0377360A (ja) * 1989-08-18 1991-04-02 Mitsubishi Electric Corp 半導体装置
JPH0513682A (ja) * 1991-07-02 1993-01-22 Mitsubishi Electric Corp 半導体装置
US6492705B1 (en) * 1996-06-04 2002-12-10 Intersil Corporation Integrated circuit air bridge structures and methods of fabricating same
US5798557A (en) * 1996-08-29 1998-08-25 Harris Corporation Lid wafer bond packaging and micromachining
US6159385A (en) * 1998-05-08 2000-12-12 Rockwell Technologies, Llc Process for manufacture of micro electromechanical devices having high electrical isolation
US6201287B1 (en) * 1998-10-26 2001-03-13 Micron Technology, Inc. Monolithic inductance-enhancing integrated circuits, complementary metal oxide semiconductor (CMOS) inductance-enhancing integrated circuits, inductor assemblies, and inductance-multiplying methods
JP2000186931A (ja) * 1998-12-21 2000-07-04 Murata Mfg Co Ltd 小型電子部品及びその製造方法並びに該小型電子部品に用いるビアホールの成形方法
US6240622B1 (en) * 1999-07-09 2001-06-05 Micron Technology, Inc. Integrated circuit inductors
JP2001044034A (ja) * 1999-07-27 2001-02-16 Fuji Electric Co Ltd 平面型磁気素子
JP3446681B2 (ja) * 1999-09-28 2003-09-16 株式会社村田製作所 積層インダクタアレイ
KR100368930B1 (ko) * 2001-03-29 2003-01-24 한국과학기술원 반도체 기판 위에 높이 떠 있는 3차원 금속 소자, 그 회로모델, 및 그 제조방법
KR100382765B1 (ko) * 2001-06-15 2003-05-09 삼성전자주식회사 송수신용 수동소자와 그 집적모듈 및 그 제조방법
JP4202914B2 (ja) * 2001-08-09 2008-12-24 エヌエックスピー ビー ヴィ 平面誘導性部品および平面変成器
US6856007B2 (en) * 2001-08-28 2005-02-15 Tessera, Inc. High-frequency chip packages
US6518737B1 (en) * 2001-09-28 2003-02-11 Catalyst Semiconductor, Inc. Low dropout voltage regulator with non-miller frequency compensation
JP3792635B2 (ja) * 2001-12-14 2006-07-05 富士通株式会社 電子装置
KR100465233B1 (ko) * 2002-03-05 2005-01-13 삼성전자주식회사 저손실 인덕터소자 및 그의 제조방법
JP4159378B2 (ja) * 2002-04-25 2008-10-01 三菱電機株式会社 高周波装置とその製造方法
US7147604B1 (en) * 2002-08-07 2006-12-12 Cardiomems, Inc. High Q factor sensor
KR100477547B1 (ko) * 2002-08-09 2005-03-18 동부아남반도체 주식회사 반도체 소자의 인덕터 형성방법
US7255801B2 (en) * 2004-04-08 2007-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. Deep submicron CMOS compatible suspending inductor

Also Published As

Publication number Publication date
EP1619697A2 (de) 2006-01-25
KR20060007618A (ko) 2006-01-26
KR100548388B1 (ko) 2006-02-02
US20060017539A1 (en) 2006-01-26
JP2006032976A (ja) 2006-02-02
EP1619697A3 (de) 2006-03-22
JP4383392B2 (ja) 2009-12-16
EP1619697B1 (de) 2008-06-18

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