DE602004021317D1 - Photomaske, Halbleiterbelichtungsverfahren, und Verfahren zur Herstellung eines Halbleiterartikels - Google Patents

Photomaske, Halbleiterbelichtungsverfahren, und Verfahren zur Herstellung eines Halbleiterartikels

Info

Publication number
DE602004021317D1
DE602004021317D1 DE602004021317T DE602004021317T DE602004021317D1 DE 602004021317 D1 DE602004021317 D1 DE 602004021317D1 DE 602004021317 T DE602004021317 T DE 602004021317T DE 602004021317 T DE602004021317 T DE 602004021317T DE 602004021317 D1 DE602004021317 D1 DE 602004021317D1
Authority
DE
Germany
Prior art keywords
semiconductor
photomask
manufacturing
article
exposure method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602004021317T
Other languages
English (en)
Inventor
Tsutomu Takenaka
Seiya Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE602004021317D1 publication Critical patent/DE602004021317D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE602004021317T 2003-07-10 2004-07-08 Photomaske, Halbleiterbelichtungsverfahren, und Verfahren zur Herstellung eines Halbleiterartikels Expired - Fee Related DE602004021317D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003194940A JP4328572B2 (ja) 2003-07-10 2003-07-10 投影露光装置、投影露光装置に使用されるレチクル、投影露光方法及び半導体デバイス製造方法

Publications (1)

Publication Number Publication Date
DE602004021317D1 true DE602004021317D1 (de) 2009-07-16

Family

ID=33448015

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004021317T Expired - Fee Related DE602004021317D1 (de) 2003-07-10 2004-07-08 Photomaske, Halbleiterbelichtungsverfahren, und Verfahren zur Herstellung eines Halbleiterartikels

Country Status (6)

Country Link
US (1) US7348107B2 (de)
EP (1) EP1496394B1 (de)
JP (1) JP4328572B2 (de)
KR (1) KR100552559B1 (de)
DE (1) DE602004021317D1 (de)
TW (1) TWI247340B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005053651A1 (de) * 2005-11-10 2007-05-16 Zeiss Carl Smt Ag Mikrolithographische Projektionsbelichtungsanlage sowie Verfahren zur Herstellung mikrostrukturierter Bauelemente
JP4764161B2 (ja) 2005-12-22 2011-08-31 キヤノン株式会社 露光装置、露光方法及びデバイス製造方法
US20080239263A1 (en) * 2007-03-29 2008-10-02 Asml Netherlands B.V. Lithographic system and device manufacturing method
JP5948778B2 (ja) * 2011-09-28 2016-07-06 凸版印刷株式会社 反射型マスクブランク
JP2017054105A (ja) * 2015-09-11 2017-03-16 旭硝子株式会社 マスクブランク

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2771907B2 (ja) * 1991-05-24 1998-07-02 三菱電機株式会社 フォトマスクおよびその製造方法
JPH08123007A (ja) 1994-10-18 1996-05-17 Fujitsu Ltd 位相シフトレチクル
JPH09211842A (ja) * 1996-02-08 1997-08-15 Washi Kosan Kk 光学的手段を用いた電子回路形成における光反射防止方法及びその装置とその製品
US6627355B2 (en) * 1999-07-20 2003-09-30 Advanced Micro Devices, Inc. Method of and system for improving stability of photomasks
US6627356B2 (en) * 2000-03-24 2003-09-30 Kabushiki Kaisha Toshiba Photomask used in manufacturing of semiconductor device, photomask blank, and method of applying light exposure to semiconductor wafer by using said photomask

Also Published As

Publication number Publication date
TWI247340B (en) 2006-01-11
JP4328572B2 (ja) 2009-09-09
US20050042525A1 (en) 2005-02-24
JP2005031287A (ja) 2005-02-03
EP1496394A3 (de) 2006-03-22
KR20050007176A (ko) 2005-01-17
KR100552559B1 (ko) 2006-02-14
EP1496394B1 (de) 2009-06-03
TW200507062A (en) 2005-02-16
EP1496394A2 (de) 2005-01-12
US7348107B2 (en) 2008-03-25

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee