DE602004016861D1 - Auf mems basierende mehrpolare elektrostatische einspannvorrichtung - Google Patents

Auf mems basierende mehrpolare elektrostatische einspannvorrichtung

Info

Publication number
DE602004016861D1
DE602004016861D1 DE602004016861T DE602004016861T DE602004016861D1 DE 602004016861 D1 DE602004016861 D1 DE 602004016861D1 DE 602004016861 T DE602004016861 T DE 602004016861T DE 602004016861 T DE602004016861 T DE 602004016861T DE 602004016861 D1 DE602004016861 D1 DE 602004016861D1
Authority
DE
Germany
Prior art keywords
multipool
mems
clamping device
electrostatic clamping
electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602004016861T
Other languages
English (en)
Inventor
Peter Kellerman
Shu Qin
Douglas Brown
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of DE602004016861D1 publication Critical patent/DE602004016861D1/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE602004016861T 2003-08-18 2004-08-18 Auf mems basierende mehrpolare elektrostatische einspannvorrichtung Expired - Fee Related DE602004016861D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/642,939 US7072165B2 (en) 2003-08-18 2003-08-18 MEMS based multi-polar electrostatic chuck
PCT/US2004/026896 WO2005020316A1 (en) 2003-08-18 2004-08-18 Mems based multi-polar electrostatic chuck

Publications (1)

Publication Number Publication Date
DE602004016861D1 true DE602004016861D1 (de) 2008-11-13

Family

ID=34193758

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004016861T Expired - Fee Related DE602004016861D1 (de) 2003-08-18 2004-08-18 Auf mems basierende mehrpolare elektrostatische einspannvorrichtung

Country Status (8)

Country Link
US (1) US7072165B2 (de)
EP (1) EP1656697B1 (de)
JP (1) JP4692847B2 (de)
KR (1) KR20060069459A (de)
CN (1) CN100437964C (de)
DE (1) DE602004016861D1 (de)
TW (1) TWI357124B (de)
WO (1) WO2005020316A1 (de)

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JP5069452B2 (ja) * 2006-04-27 2012-11-07 アプライド マテリアルズ インコーポレイテッド 二重温度帯を有する静電チャックをもつ基板支持体
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
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JP4929150B2 (ja) * 2007-12-27 2012-05-09 新光電気工業株式会社 静電チャック及び基板温調固定装置
US20090314211A1 (en) * 2008-06-24 2009-12-24 Applied Materials, Inc. Big foot lift pin
EP2317546A1 (de) * 2009-10-30 2011-05-04 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Verfahren zur Herstellung einer Stützstruktur
US9330952B2 (en) * 2009-12-30 2016-05-03 Solexel, Inc. Bipolar mobile electrostatic carriers for wafer processing
US20110226419A1 (en) * 2010-03-18 2011-09-22 Yong Hyun Lee Process Chamber, Semiconductor Manufacturing Apparatus and Substrate Processing Method Having the Same
FR2974251B1 (fr) * 2011-04-18 2013-11-01 Ecole Polytech Dispositif pour la gestion thermique d'un élément optique et procédé de gestion thermique associe.
CN109254501A (zh) 2012-02-03 2019-01-22 Asml荷兰有限公司 衬底支架、光刻装置、器件制造方法和制造衬底保持器的方法
US8415771B1 (en) * 2012-05-25 2013-04-09 LuxVue Technology Corporation Micro device transfer head with silicon electrode
US9916998B2 (en) * 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
US9685356B2 (en) * 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
WO2015043890A1 (en) 2013-09-27 2015-04-02 Asml Netherlands B.V. Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method
CN104752118B (zh) * 2013-12-25 2017-02-15 中微半导体设备(上海)有限公司 等离子体处理腔室及其静电夹盘的制造方法
CN104752119B (zh) * 2013-12-25 2017-08-25 中微半导体设备(上海)有限公司 等离子体处理腔室及其静电夹盘的制造方法
US20170117174A1 (en) * 2014-06-17 2017-04-27 Evatec Ag Electro-static chuck with radiofrequency shunt
JP6408903B2 (ja) * 2014-12-25 2018-10-17 東京エレクトロン株式会社 エッチング処理方法及びエッチング処理装置
JP6728196B2 (ja) * 2015-03-20 2020-07-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高温ポリマー接合によって金属ベースに接合されたセラミックス静電チャック
US9673025B2 (en) * 2015-07-27 2017-06-06 Lam Research Corporation Electrostatic chuck including embedded faraday cage for RF delivery and associated methods for operation, monitoring, and control
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
WO2017139163A1 (en) * 2016-02-10 2017-08-17 Entegris, Inc. Wafer contact surface protrusion profile with improved particle performance
CN105629681B (zh) * 2016-04-07 2018-12-21 京东方科技集团股份有限公司 一种承载基台、曝光装置及曝光方法
US11532497B2 (en) * 2016-06-07 2022-12-20 Applied Materials, Inc. High power electrostatic chuck design with radio frequency coupling
US20180025931A1 (en) * 2016-07-22 2018-01-25 Applied Materials, Inc. Processed wafer as top plate of a workpiece carrier in semiconductor and mechanical processing
US10460969B2 (en) * 2016-08-22 2019-10-29 Applied Materials, Inc. Bipolar electrostatic chuck and method for using the same
US10892179B2 (en) * 2016-11-08 2021-01-12 Lam Research Corporation Electrostatic chuck including clamp electrode assembly forming portion of Faraday cage for RF delivery and associated methods
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
US11114326B2 (en) 2017-09-08 2021-09-07 Applied Materials, Inc. Substrate chucking and dechucking methods
US20190080949A1 (en) * 2017-09-08 2019-03-14 Applied Materials, Inc. Soft chucking and dechucking for electrostatic chucking substrate supports
US20230114751A1 (en) * 2021-10-08 2023-04-13 Applied Materials, Inc. Substrate support

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US4788627A (en) * 1986-06-06 1988-11-29 Tektronix, Inc. Heat sink device using composite metal alloy
WO1988009054A1 (en) 1987-05-06 1988-11-17 Labtam Limited Electrostatic chuck using ac field excitation
JP2779950B2 (ja) 1989-04-25 1998-07-23 東陶機器株式会社 静電チャックの電圧印加方法および電圧印加装置
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US5155652A (en) * 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
US5325261A (en) 1991-05-17 1994-06-28 Unisearch Limited Electrostatic chuck with improved release
US5444597A (en) 1993-01-15 1995-08-22 Blake; Julian G. Wafer release method and apparatus
US5583736A (en) * 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
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US5671116A (en) * 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
JPH09172055A (ja) * 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
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US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
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JPH10284583A (ja) 1997-04-04 1998-10-23 Mitsubishi Electric Corp 静電チャック除電方法及び半導体製造装置
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US6236555B1 (en) 1999-04-19 2001-05-22 Applied Materials, Inc. Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle
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JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP5165817B2 (ja) * 2000-03-31 2013-03-21 ラム リサーチ コーポレーション 静電チャック及びその製造方法
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Also Published As

Publication number Publication date
US7072165B2 (en) 2006-07-04
CN100437964C (zh) 2008-11-26
JP4692847B2 (ja) 2011-06-01
US20050041364A1 (en) 2005-02-24
TWI357124B (en) 2012-01-21
CN1868051A (zh) 2006-11-22
KR20060069459A (ko) 2006-06-21
JP2007503123A (ja) 2007-02-15
EP1656697A1 (de) 2006-05-17
WO2005020316A1 (en) 2005-03-03
EP1656697B1 (de) 2008-10-01
TW200509291A (en) 2005-03-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee