DE602004015300D1 - Verfahren zur abscheidung von materialien auf substraten und verfahren zur bildung von schichten auf susbtraten - Google Patents
Verfahren zur abscheidung von materialien auf substraten und verfahren zur bildung von schichten auf susbtratenInfo
- Publication number
- DE602004015300D1 DE602004015300D1 DE602004015300T DE602004015300T DE602004015300D1 DE 602004015300 D1 DE602004015300 D1 DE 602004015300D1 DE 602004015300 T DE602004015300 T DE 602004015300T DE 602004015300 T DE602004015300 T DE 602004015300T DE 602004015300 D1 DE602004015300 D1 DE 602004015300D1
- Authority
- DE
- Germany
- Prior art keywords
- metal
- utilized
- materials
- introduce
- precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 2
- 238000000926 separation method Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 7
- 239000002243 precursor Substances 0.000 abstract 5
- 239000012530 fluid Substances 0.000 abstract 4
- 229910044991 metal oxide Inorganic materials 0.000 abstract 3
- 150000004706 metal oxides Chemical class 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/101—Liquid Source Chemical Depostion, i.e. LSCVD or Aerosol Chemical Vapor Deposition, i.e. ACVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/652,224 US7048968B2 (en) | 2003-08-22 | 2003-08-22 | Methods of depositing materials over substrates, and methods of forming layers over substrates |
PCT/US2004/025804 WO2005047563A1 (en) | 2003-08-22 | 2004-08-09 | Methods of depositing materials over substrates and methods of forming layers over substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004015300D1 true DE602004015300D1 (de) | 2008-09-04 |
Family
ID=34194673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004015300T Expired - Lifetime DE602004015300D1 (de) | 2003-08-22 | 2004-08-09 | Verfahren zur abscheidung von materialien auf substraten und verfahren zur bildung von schichten auf susbtraten |
Country Status (9)
Country | Link |
---|---|
US (3) | US7048968B2 (de) |
EP (1) | EP1656469B1 (de) |
JP (1) | JP2007502021A (de) |
KR (1) | KR100762575B1 (de) |
CN (1) | CN1839217B (de) |
AT (1) | ATE402276T1 (de) |
DE (1) | DE602004015300D1 (de) |
TW (1) | TWI288785B (de) |
WO (1) | WO2005047563A1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7048968B2 (en) * | 2003-08-22 | 2006-05-23 | Micron Technology, Inc. | Methods of depositing materials over substrates, and methods of forming layers over substrates |
US8158488B2 (en) * | 2004-08-31 | 2012-04-17 | Micron Technology, Inc. | Method of increasing deposition rate of silicon dioxide on a catalyst |
KR20090107073A (ko) * | 2007-01-30 | 2009-10-12 | 램 리써치 코포레이션 | 초임계 용매를 사용하여 반도체 기판 상에 금속막을 형성하는 조성물 및 방법 |
FR2915753B1 (fr) * | 2007-05-02 | 2009-09-04 | Commissariat Energie Atomique | Procede et dispositif de preparation d'un revetement multicouche sur un substrat |
US10041169B2 (en) * | 2008-05-27 | 2018-08-07 | Picosun Oy | System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor |
CN101651174B (zh) * | 2008-08-12 | 2013-01-23 | 昆山中辰硅晶有限公司 | 供半导体光电元件外延用的半导体基板及其制造方法 |
US8404878B2 (en) * | 2010-04-07 | 2013-03-26 | American Air Liquide, Inc. | Titanium-containing precursors for vapor deposition |
US9269567B2 (en) * | 2013-12-17 | 2016-02-23 | Intermolecular, Inc. | High productivity combinatorial processing using pressure-controlled one-way valves |
US9330902B1 (en) | 2015-06-04 | 2016-05-03 | United Microelectronics Corp. | Method for forming HfOx film based on atomic layer deposition (ALD) process |
TWI579902B (zh) * | 2015-06-12 | 2017-04-21 | 晶元光電股份有限公司 | 一種基板移除設備及利用此設備的基板移除製程 |
US10431695B2 (en) | 2017-12-20 | 2019-10-01 | Micron Technology, Inc. | Transistors comprising at lease one of GaP, GaN, and GaAs |
US10825816B2 (en) | 2017-12-28 | 2020-11-03 | Micron Technology, Inc. | Recessed access devices and DRAM constructions |
US10319586B1 (en) | 2018-01-02 | 2019-06-11 | Micron Technology, Inc. | Methods comprising an atomic layer deposition sequence |
US10734527B2 (en) | 2018-02-06 | 2020-08-04 | Micron Technology, Inc. | Transistors comprising a pair of source/drain regions having a channel there-between |
TWI792008B (zh) * | 2020-06-19 | 2023-02-11 | 國立中山大學 | 針具的表面改質方法 |
CN112176320B (zh) * | 2020-09-11 | 2021-09-24 | 大连理工大学 | 一种超临界二氧化碳脉冲可控生长二维半导体薄膜的方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4737384A (en) * | 1985-11-01 | 1988-04-12 | Allied Corporation | Deposition of thin films using supercritical fluids |
US4970093A (en) * | 1990-04-12 | 1990-11-13 | University Of Colorado Foundation | Chemical deposition methods using supercritical fluid solutions |
KR930019861A (ko) * | 1991-12-12 | 1993-10-19 | 완다 케이. 덴슨-로우 | 조밀상 기체를 이용한 코팅 방법 |
US5789027A (en) * | 1996-11-12 | 1998-08-04 | University Of Massachusetts | Method of chemically depositing material onto a substrate |
US6348376B2 (en) * | 1997-09-29 | 2002-02-19 | Samsung Electronics Co., Ltd. | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same |
EP1024524A2 (de) | 1999-01-27 | 2000-08-02 | Matsushita Electric Industrial Co., Ltd. | Abscheidung von dielektrischen Schichten unter Verwendung von überkritischem CO2 |
US6531224B1 (en) * | 1999-03-19 | 2003-03-11 | Battelle Memorial Institute | Self-assembled monolayer and method of making |
US7629028B2 (en) * | 1999-03-19 | 2009-12-08 | Battelle Memorial Insitute | Methods of making monolayers |
US6689700B1 (en) * | 1999-11-02 | 2004-02-10 | University Of Massachusetts | Chemical fluid deposition method for the formation of metal and metal alloy films on patterned and unpatterned substrates |
IT1313967B1 (it) * | 1999-12-27 | 2002-09-26 | Thermoquest Italia Spa | Sistema e metodo per controllare la temperatura di una colonna percromatografia. |
US6984591B1 (en) * | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
JP4577464B2 (ja) | 2000-06-27 | 2010-11-10 | 三菱瓦斯化学株式会社 | 銅−亜鉛系触媒前駆体組成物および該触媒の製造法 |
US6576345B1 (en) * | 2000-11-30 | 2003-06-10 | Novellus Systems Inc | Dielectric films with low dielectric constants |
GB2371248A (en) * | 2000-12-04 | 2002-07-24 | Seiko Epson Corp | Fabrication of self-assembled monolayers |
US6451375B1 (en) * | 2001-01-05 | 2002-09-17 | International Business Machines Corporation | Process for depositing a film on a nanometer structure |
KR100384558B1 (ko) * | 2001-02-22 | 2003-05-22 | 삼성전자주식회사 | 반도체 장치의 유전체층 형성방법 및 이를 이용한캐패시터 형성방법 |
US6951765B1 (en) * | 2001-12-12 | 2005-10-04 | Novellus Systems, Inc. | Method and apparatus for introduction of solid precursors and reactants into a supercritical fluid reactor |
US7119418B2 (en) * | 2001-12-31 | 2006-10-10 | Advanced Technology Materials, Inc. | Supercritical fluid-assisted deposition of materials on semiconductor substrates |
US7030168B2 (en) * | 2001-12-31 | 2006-04-18 | Advanced Technology Materials, Inc. | Supercritical fluid-assisted deposition of materials on semiconductor substrates |
JP4234930B2 (ja) | 2002-01-24 | 2009-03-04 | セイコーエプソン株式会社 | 成膜装置及び成膜方法 |
US6911391B2 (en) * | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
CN1202163C (zh) * | 2002-02-08 | 2005-05-18 | 中国科学院化学研究所 | 用超临界二氧化碳制备导电聚吡咯复合膜材料的方法 |
US6653236B2 (en) * | 2002-03-29 | 2003-11-25 | Micron Technology, Inc. | Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions |
WO2003106011A2 (en) | 2002-06-12 | 2003-12-24 | Praxair Technology, Inc. | A method for producing organometallic compounds |
JP4336769B2 (ja) | 2002-06-27 | 2009-09-30 | 独立行政法人産業技術総合研究所 | 薄膜作製方法および薄膜作製装置 |
TWI274082B (en) | 2002-10-31 | 2007-02-21 | Praxair Technology Inc | Methods for making metallocene compounds |
US6869876B2 (en) * | 2002-11-05 | 2005-03-22 | Air Products And Chemicals, Inc. | Process for atomic layer deposition of metal films |
US6989172B2 (en) * | 2003-01-27 | 2006-01-24 | Micell Technologies, Inc. | Method of coating microelectronic substrates |
US6835664B1 (en) * | 2003-06-26 | 2004-12-28 | Micron Technology, Inc. | Methods of forming trenched isolation regions |
US7048968B2 (en) * | 2003-08-22 | 2006-05-23 | Micron Technology, Inc. | Methods of depositing materials over substrates, and methods of forming layers over substrates |
-
2003
- 2003-08-22 US US10/652,224 patent/US7048968B2/en not_active Expired - Fee Related
-
2004
- 2004-08-09 JP JP2006523292A patent/JP2007502021A/ja active Pending
- 2004-08-09 AT AT04780611T patent/ATE402276T1/de not_active IP Right Cessation
- 2004-08-09 EP EP04780611A patent/EP1656469B1/de not_active Expired - Lifetime
- 2004-08-09 DE DE602004015300T patent/DE602004015300D1/de not_active Expired - Lifetime
- 2004-08-09 KR KR1020067002332A patent/KR100762575B1/ko not_active IP Right Cessation
- 2004-08-09 CN CN2004800241623A patent/CN1839217B/zh not_active Expired - Fee Related
- 2004-08-09 WO PCT/US2004/025804 patent/WO2005047563A1/en active Application Filing
- 2004-08-18 TW TW093124852A patent/TWI288785B/zh not_active IP Right Cessation
-
2006
- 2006-04-13 US US11/404,611 patent/US7544388B2/en not_active Expired - Fee Related
-
2009
- 2009-05-07 US US12/436,936 patent/US7794787B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2005047563A1 (en) | 2005-05-26 |
US7794787B2 (en) | 2010-09-14 |
KR20060037422A (ko) | 2006-05-03 |
US20050042374A1 (en) | 2005-02-24 |
US7544388B2 (en) | 2009-06-09 |
ATE402276T1 (de) | 2008-08-15 |
CN1839217A (zh) | 2006-09-27 |
CN1839217B (zh) | 2010-04-21 |
KR100762575B1 (ko) | 2007-10-01 |
JP2007502021A (ja) | 2007-02-01 |
TWI288785B (en) | 2007-10-21 |
US7048968B2 (en) | 2006-05-23 |
EP1656469A1 (de) | 2006-05-17 |
US20060222770A1 (en) | 2006-10-05 |
EP1656469B1 (de) | 2008-07-23 |
TW200512311A (en) | 2005-04-01 |
US20090215252A1 (en) | 2009-08-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |