DE602004005781D1 - Herstellungsverfahren eines organischen Vielfachlasers mit vertikalem Resonator und dielektrischem Stapel mit geätzter Zone - Google Patents
Herstellungsverfahren eines organischen Vielfachlasers mit vertikalem Resonator und dielektrischem Stapel mit geätzter ZoneInfo
- Publication number
- DE602004005781D1 DE602004005781D1 DE602004005781T DE602004005781T DE602004005781D1 DE 602004005781 D1 DE602004005781 D1 DE 602004005781D1 DE 602004005781 T DE602004005781 T DE 602004005781T DE 602004005781 T DE602004005781 T DE 602004005781T DE 602004005781 D1 DE602004005781 D1 DE 602004005781D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- vertical cavity
- dielectric stack
- organic laser
- etched zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US609922 | 1984-05-14 | ||
US10/609,922 US6790696B1 (en) | 2003-06-30 | 2003-06-30 | Providing an organic vertical cavity laser array device with etched region in dielectric stack |
Publications (2)
Publication Number | Publication Date |
---|---|
DE602004005781D1 true DE602004005781D1 (de) | 2007-05-24 |
DE602004005781T2 DE602004005781T2 (de) | 2008-01-10 |
Family
ID=32927864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004005781T Expired - Lifetime DE602004005781T2 (de) | 2003-06-30 | 2004-05-21 | Bereitstellen einer organischen Vertival-Cavity-Laser-Array-Vorrichtung mit geätztem Bereich im dielektrischen Stapel |
Country Status (7)
Country | Link |
---|---|
US (1) | US6790696B1 (de) |
EP (1) | EP1494326B1 (de) |
JP (1) | JP4584633B2 (de) |
KR (1) | KR101045726B1 (de) |
CN (1) | CN100365890C (de) |
DE (1) | DE602004005781T2 (de) |
TW (1) | TWI333699B (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6870868B2 (en) * | 2003-02-18 | 2005-03-22 | Eastman Kodak Company | Organic laser having improved linearity |
US7122843B2 (en) * | 2004-05-28 | 2006-10-17 | Eastman Kodak Company | Display device using vertical cavity laser arrays |
JP4689304B2 (ja) | 2004-06-29 | 2011-05-25 | パナソニック株式会社 | 液晶表示装置 |
KR100974322B1 (ko) | 2005-09-06 | 2010-08-05 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 유기 색소 고체 레이저 |
US7623560B2 (en) * | 2007-09-27 | 2009-11-24 | Ostendo Technologies, Inc. | Quantum photonic imagers and methods of fabrication thereof |
US9025086B2 (en) | 2012-04-13 | 2015-05-05 | Red.Com, Inc. | Video projector system |
CN104272728B (zh) | 2012-04-13 | 2017-12-01 | Red.Com有限责任公司 | 视频投影器系统 |
US8837550B2 (en) | 2012-11-08 | 2014-09-16 | Massachusetts Institute Of Technology | Continuous-wave organic dye lasers and methods |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05315684A (ja) * | 1992-05-11 | 1993-11-26 | Hitachi Ltd | レーザ光源及びこれを用いたレーザ加工装置 |
JP3274527B2 (ja) * | 1992-09-22 | 2002-04-15 | 株式会社日立製作所 | 有機発光素子とその基板 |
JPH06283271A (ja) * | 1993-03-26 | 1994-10-07 | Ricoh Co Ltd | 有機電界発光素子 |
US5405710A (en) * | 1993-11-22 | 1995-04-11 | At&T Corp. | Article comprising microcavity light sources |
US5478658A (en) * | 1994-05-20 | 1995-12-26 | At&T Corp. | Article comprising a microcavity light source |
FR2728399B1 (fr) * | 1994-12-20 | 1997-03-14 | Bouadma Nouredine | Composant laser a reflecteur de bragg en materiau organique et procede pour sa realisation |
US5513204A (en) * | 1995-04-12 | 1996-04-30 | Optical Concepts, Inc. | Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump |
CA2223167C (en) * | 1996-12-04 | 2004-04-27 | Hitachi, Ltd. | Organic light emitting element and producing method thereof |
DE69827246T2 (de) * | 1997-05-09 | 2006-01-26 | The Trustees Of Princeton University | Organische laser |
US6160828A (en) * | 1997-07-18 | 2000-12-12 | The Trustees Of Princeton University | Organic vertical-cavity surface-emitting laser |
US6418156B1 (en) | 1998-11-12 | 2002-07-09 | Raytheon Company | Laser with gain medium configured to provide an integrated optical pump cavity |
KR100319772B1 (ko) * | 1999-12-02 | 2002-01-09 | 오길록 | 유기물 마이크로 공진 레이저 |
US6658037B2 (en) * | 2001-04-11 | 2003-12-02 | Eastman Kodak Company | Incoherent light-emitting device apparatus for driving vertical laser cavity |
US20030047101A1 (en) | 2001-06-06 | 2003-03-13 | Mark Folsom | Methods and systems for laser diode ignition of field weaponry |
US6914928B2 (en) | 2001-06-14 | 2005-07-05 | The United States Of America As Represented By The Secretary Of The Army | Diode array end pumped slab laser |
US6687274B2 (en) * | 2002-02-04 | 2004-02-03 | Eastman Kodak Company | Organic vertical cavity phase-locked laser array device |
-
2003
- 2003-06-30 US US10/609,922 patent/US6790696B1/en not_active Expired - Fee Related
-
2004
- 2004-05-21 EP EP04012029A patent/EP1494326B1/de not_active Expired - Fee Related
- 2004-05-21 DE DE602004005781T patent/DE602004005781T2/de not_active Expired - Lifetime
- 2004-06-28 JP JP2004190291A patent/JP4584633B2/ja not_active Expired - Fee Related
- 2004-06-29 KR KR1020040049691A patent/KR101045726B1/ko not_active IP Right Cessation
- 2004-06-29 TW TW093119124A patent/TWI333699B/zh not_active IP Right Cessation
- 2004-06-30 CN CNB2004100617436A patent/CN100365890C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6790696B1 (en) | 2004-09-14 |
JP4584633B2 (ja) | 2010-11-24 |
EP1494326A1 (de) | 2005-01-05 |
DE602004005781T2 (de) | 2008-01-10 |
EP1494326B1 (de) | 2007-04-11 |
KR101045726B1 (ko) | 2011-06-30 |
TWI333699B (en) | 2010-11-21 |
JP2005026686A (ja) | 2005-01-27 |
TW200511611A (en) | 2005-03-16 |
CN1610198A (zh) | 2005-04-27 |
KR20050002631A (ko) | 2005-01-07 |
CN100365890C (zh) | 2008-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60233769D1 (de) | Herstellungsverfahren von Hohlstabilisatoren | |
DE60304931D1 (de) | Monolithische Mehrwellenlängen Anordnung von Oberflächenemittierenden Lasern mit vertikalem Resonator und Herstellungsverfahren derselben | |
IL174194A0 (en) | Method for the production of 4-(4-aminophenyl)-3-morpholinon | |
IS2723B (is) | Ný aðferð til að framleiða róflúmílast | |
DE602004005781D1 (de) | Herstellungsverfahren eines organischen Vielfachlasers mit vertikalem Resonator und dielektrischem Stapel mit geätzter Zone | |
AUPS098002A0 (en) | Tunable cavity resonator, and method of fabricating same | |
ITMI20021804A1 (it) | Metodo di produzione di un cilindro | |
NO20025814D0 (no) | Fremgangsmåte ved brönnfullföring | |
WO2004105094A3 (en) | Photonic crystal single transverse mode defect structure for vertical cavity suface emitting laser | |
DE602004007432D1 (de) | Halbleiterlaser mit externem Resonator enthaltend ein Etalon und Verfahren zur Herstellung desselben | |
DE60226695D1 (de) | Herstellungsverfahren einer Hochdruckentladungslampe | |
EE200300343A (et) | Pantoteenhappe võimendatud produktsiooni meetod | |
NO20053625D0 (no) | Fremgangsmate for a forme en oreplugg ved laserablasjon og en oreplugg formet derav | |
NO20033851D0 (no) | Fremgangsmåte for fokusering ved inhomogen bakgrunn ved multiarray induksjonsmålinger i en avvikende brönn | |
DE602004006665D1 (de) | Herstellungsverfahren eines Rotorkerns | |
FR2864341B1 (fr) | Microcomposant a cavite hermetique comportant un bouchon et procede de fabrication d'un tel microcomposant | |
IS8333A (is) | Aðferð við framleiðslu á THIP | |
FI20031903A0 (fi) | Menetelmä kuitutuotteen valmistamiseksi | |
NO20015766L (no) | Fremgangsmåte ved oljeproduksjon | |
DE602004010740D1 (de) | Laser mit vertikalem Resonator und anorganischen Abstandsschichten | |
BR0202058B1 (pt) | processo para a produÇço de diàxido de enxofre. | |
FR2857952B1 (fr) | Resonateur electromecanique et procede de fabrication d'un tel resonateur | |
FR2855759B1 (fr) | Composition aqueuse stabilisee, desinfectante a base d'un complexe d'acide peracetique de peroxyde d'hudrogene et d'acide stabilise, ainsi qu'un procede pour sa fabrication | |
FI20030945A (fi) | Sähkömekaaninen muuttaja ja valmistusmenetelmä | |
EP1825591A4 (de) | Resonator für einen spannungsgesteuerten oszillator und herstellungsverfahren dafür |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |