FR2857952B1 - Resonateur electromecanique et procede de fabrication d'un tel resonateur - Google Patents

Resonateur electromecanique et procede de fabrication d'un tel resonateur

Info

Publication number
FR2857952B1
FR2857952B1 FR0309106A FR0309106A FR2857952B1 FR 2857952 B1 FR2857952 B1 FR 2857952B1 FR 0309106 A FR0309106 A FR 0309106A FR 0309106 A FR0309106 A FR 0309106A FR 2857952 B1 FR2857952 B1 FR 2857952B1
Authority
FR
France
Prior art keywords
resonator
manufacturing
electromechanical
electromechanical resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0309106A
Other languages
English (en)
Other versions
FR2857952A1 (fr
Inventor
Stephane Monfray
Pascal Ancey
Thomas Skotnicki
Karim Segueni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0309106A priority Critical patent/FR2857952B1/fr
Priority to US10/895,616 priority patent/US7196451B2/en
Publication of FR2857952A1 publication Critical patent/FR2857952A1/fr
Application granted granted Critical
Publication of FR2857952B1 publication Critical patent/FR2857952B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02511—Vertical, i.e. perpendicular to the substrate plane

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Micromachines (AREA)
FR0309106A 2003-07-25 2003-07-25 Resonateur electromecanique et procede de fabrication d'un tel resonateur Expired - Fee Related FR2857952B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0309106A FR2857952B1 (fr) 2003-07-25 2003-07-25 Resonateur electromecanique et procede de fabrication d'un tel resonateur
US10/895,616 US7196451B2 (en) 2003-07-25 2004-07-21 Electromechanical resonator and method for fabricating such a resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0309106A FR2857952B1 (fr) 2003-07-25 2003-07-25 Resonateur electromecanique et procede de fabrication d'un tel resonateur

Publications (2)

Publication Number Publication Date
FR2857952A1 FR2857952A1 (fr) 2005-01-28
FR2857952B1 true FR2857952B1 (fr) 2005-12-16

Family

ID=33561089

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0309106A Expired - Fee Related FR2857952B1 (fr) 2003-07-25 2003-07-25 Resonateur electromecanique et procede de fabrication d'un tel resonateur

Country Status (2)

Country Link
US (1) US7196451B2 (fr)
FR (1) FR2857952B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004036803A1 (de) * 2004-07-29 2006-03-23 Robert Bosch Gmbh Verfahren zum Ätzen einer Schicht auf einem Substrat
JP2006217281A (ja) * 2005-02-03 2006-08-17 Toshiba Corp 薄膜バルク音響装置の製造方法
DE102006032195A1 (de) * 2006-07-12 2008-01-24 Robert Bosch Gmbh Verfahren zur Herstellung von MEMS-Strukturen
FR2906238B1 (fr) 2006-09-27 2008-12-19 Commissariat Energie Atomique Procede de realisation d'un composant electromecanique sur un substrat plan
FR2925890B1 (fr) * 2007-12-28 2010-01-29 Commissariat Energie Atomique Procede de fabrication de composants mecaniques de structures mems ou nems en silicium monocristallin
WO2009113013A2 (fr) * 2008-03-14 2009-09-17 Nxp B.V. Dispositif de capteur et procédé de détection de particules
DE112013006687B4 (de) 2013-03-28 2022-02-17 Intel Corporation Resonanzkanaltransistor mit mehreren gates

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19625403A1 (de) * 1996-06-25 1998-01-08 Siemens Ag Vorrichtung zum Messen magnetischer Feldstärken
US6238946B1 (en) * 1999-08-17 2001-05-29 International Business Machines Corporation Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing
US6275122B1 (en) * 1999-08-17 2001-08-14 International Business Machines Corporation Encapsulated MEMS band-pass filter for integrated circuits
FR2799305B1 (fr) * 1999-10-05 2004-06-18 St Microelectronics Sa Procede de fabrication d'un dispositif semi-conducteur a grille enveloppante et dispositif obtenu
US6469597B2 (en) * 2001-03-05 2002-10-22 Agilent Technologies, Inc. Method of mass loading of thin film bulk acoustic resonators (FBAR) for creating resonators of different frequencies and apparatus embodying the method
FR2823032B1 (fr) * 2001-04-03 2003-07-11 St Microelectronics Sa Resonateur electromecanique a poutre vibrante
KR100389927B1 (ko) * 2001-06-07 2003-07-04 삼성전자주식회사 다층 배선 구조를 구비한 반도체 소자 및 그 제조 방법
JP4052249B2 (ja) * 2002-03-11 2008-02-27 セイコーエプソン株式会社 回転／移動変換アクチュエータ
US6877209B1 (en) * 2002-08-28 2005-04-12 Silicon Light Machines, Inc. Method for sealing an active area of a surface acoustic wave device on a wafer

Also Published As

Publication number Publication date
FR2857952A1 (fr) 2005-01-28
US20050199970A1 (en) 2005-09-15
US7196451B2 (en) 2007-03-27

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090331