DE60140305D1 - Plattierungssystem mit abgesetzter sekundäranode zur halbleiterfabrikation - Google Patents

Plattierungssystem mit abgesetzter sekundäranode zur halbleiterfabrikation

Info

Publication number
DE60140305D1
DE60140305D1 DE60140305T DE60140305T DE60140305D1 DE 60140305 D1 DE60140305 D1 DE 60140305D1 DE 60140305 T DE60140305 T DE 60140305T DE 60140305 T DE60140305 T DE 60140305T DE 60140305 D1 DE60140305 D1 DE 60140305D1
Authority
DE
Germany
Prior art keywords
semiconductor fabrication
plating system
secondary anode
removed secondary
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60140305T
Other languages
German (de)
English (en)
Inventor
Minh Quoc Tran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE60140305D1 publication Critical patent/DE60140305D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
DE60140305T 2000-10-02 2001-06-04 Plattierungssystem mit abgesetzter sekundäranode zur halbleiterfabrikation Expired - Lifetime DE60140305D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/678,503 US6413390B1 (en) 2000-10-02 2000-10-02 Plating system with remote secondary anode for semiconductor manufacturing
PCT/US2001/018229 WO2002029875A2 (en) 2000-10-02 2001-06-04 Plating system with remote secondary anode for semiconductor manufacturing

Publications (1)

Publication Number Publication Date
DE60140305D1 true DE60140305D1 (de) 2009-12-10

Family

ID=24723054

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60140305T Expired - Lifetime DE60140305D1 (de) 2000-10-02 2001-06-04 Plattierungssystem mit abgesetzter sekundäranode zur halbleiterfabrikation

Country Status (9)

Country Link
US (1) US6413390B1 (enExample)
EP (1) EP1323186B1 (enExample)
JP (1) JP2004510888A (enExample)
KR (1) KR100747132B1 (enExample)
CN (1) CN1333442C (enExample)
AU (1) AU2001275274A1 (enExample)
DE (1) DE60140305D1 (enExample)
TW (1) TW525245B (enExample)
WO (1) WO2002029875A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649034B1 (en) * 2001-06-27 2003-11-18 Advanced Micro Devices, Inc. Electro-chemical metal alloying for semiconductor manufacturing
JP4014827B2 (ja) * 2001-07-25 2007-11-28 シャープ株式会社 メッキ処理装置
WO2003018874A2 (en) * 2001-08-31 2003-03-06 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
JP2005163080A (ja) * 2003-12-01 2005-06-23 Toshiba Corp めっき装置及びめっき方法
DE102005014748B4 (de) * 2005-03-31 2007-02-08 Advanced Micro Devices, Inc., Sunnyvale Technik zum elektrochemischen Abscheiden einer Legierung mit chemischer Ordnung
CN102492971B (zh) * 2011-12-28 2014-09-17 无锡科硅电子技术有限公司 用于半导体基片表面进行电镀的装置
CN102560587B (zh) * 2012-02-08 2015-03-18 南通富士通微电子股份有限公司 电镀装置
CN103422150A (zh) * 2012-05-22 2013-12-04 泰州宏瑞新材料有限责任公司 用于电镀的重金属离子浓度调节槽及电镀装置
JP5692268B2 (ja) * 2013-03-25 2015-04-01 トヨタ自動車株式会社 金属被膜の成膜装置および成膜方法
WO2021142187A1 (en) * 2020-01-09 2021-07-15 Lam Research Corporation High-speed 3d metal printing of semiconductor metal interconnects

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3144128C1 (de) * 1981-11-06 1983-06-09 Bayerische Motoren Werke AG, 8000 München Vorrichtung zum galvanischen Abscheiden eines Metalls auf einem metallischen Werkstueck
GB8911566D0 (en) * 1989-05-19 1989-07-05 Sun Ind Coatings Plating system
US5368711A (en) * 1990-08-01 1994-11-29 Poris; Jaime Selective metal electrodeposition process and apparatus
JPH04284691A (ja) * 1991-03-13 1992-10-09 Arumetsukusu:Kk プリント配線板の電気めっき方法
JPH04362199A (ja) * 1991-06-06 1992-12-15 Nec Corp 電気めっき装置
JPH05339800A (ja) * 1992-06-09 1993-12-21 Nec Corp 可溶性アノードと不溶性アノードを持つ噴流めっき装置
TW405158B (en) * 1997-09-17 2000-09-11 Ebara Corp Plating apparatus for semiconductor wafer processing
WO1999016936A1 (en) * 1997-09-30 1999-04-08 Semitool, Inc. Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations
US6024856A (en) * 1997-10-10 2000-02-15 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes
JP3187011B2 (ja) * 1998-08-31 2001-07-11 日本電気株式会社 半導体装置の製造方法
US6197182B1 (en) * 1999-07-07 2001-03-06 Technic Inc. Apparatus and method for plating wafers, substrates and other articles

Also Published As

Publication number Publication date
US6413390B1 (en) 2002-07-02
CN1333442C (zh) 2007-08-22
WO2002029875A3 (en) 2002-08-15
CN1529903A (zh) 2004-09-15
TW525245B (en) 2003-03-21
EP1323186B1 (en) 2009-10-28
WO2002029875A2 (en) 2002-04-11
JP2004510888A (ja) 2004-04-08
KR100747132B1 (ko) 2007-08-09
AU2001275274A1 (en) 2002-04-15
EP1323186A2 (en) 2003-07-02
KR20040007399A (ko) 2004-01-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition