CN1333442C - 半导体工艺用的具有远程第二阳极的电镀系统 - Google Patents

半导体工艺用的具有远程第二阳极的电镀系统 Download PDF

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Publication number
CN1333442C
CN1333442C CNB018167659A CN01816765A CN1333442C CN 1333442 C CN1333442 C CN 1333442C CN B018167659 A CNB018167659 A CN B018167659A CN 01816765 A CN01816765 A CN 01816765A CN 1333442 C CN1333442 C CN 1333442C
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CN
China
Prior art keywords
electroplating
copper
cavity
electroplating solution
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB018167659A
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English (en)
Chinese (zh)
Other versions
CN1529903A (zh
Inventor
泉明国
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of CN1529903A publication Critical patent/CN1529903A/zh
Application granted granted Critical
Publication of CN1333442C publication Critical patent/CN1333442C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB018167659A 2000-10-02 2001-06-04 半导体工艺用的具有远程第二阳极的电镀系统 Expired - Fee Related CN1333442C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/678,503 US6413390B1 (en) 2000-10-02 2000-10-02 Plating system with remote secondary anode for semiconductor manufacturing
US09/678,503 2000-10-02

Publications (2)

Publication Number Publication Date
CN1529903A CN1529903A (zh) 2004-09-15
CN1333442C true CN1333442C (zh) 2007-08-22

Family

ID=24723054

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018167659A Expired - Fee Related CN1333442C (zh) 2000-10-02 2001-06-04 半导体工艺用的具有远程第二阳极的电镀系统

Country Status (9)

Country Link
US (1) US6413390B1 (enExample)
EP (1) EP1323186B1 (enExample)
JP (1) JP2004510888A (enExample)
KR (1) KR100747132B1 (enExample)
CN (1) CN1333442C (enExample)
AU (1) AU2001275274A1 (enExample)
DE (1) DE60140305D1 (enExample)
TW (1) TW525245B (enExample)
WO (1) WO2002029875A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649034B1 (en) * 2001-06-27 2003-11-18 Advanced Micro Devices, Inc. Electro-chemical metal alloying for semiconductor manufacturing
JP4014827B2 (ja) * 2001-07-25 2007-11-28 シャープ株式会社 メッキ処理装置
WO2003018874A2 (en) * 2001-08-31 2003-03-06 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
JP2005163080A (ja) * 2003-12-01 2005-06-23 Toshiba Corp めっき装置及びめっき方法
DE102005014748B4 (de) * 2005-03-31 2007-02-08 Advanced Micro Devices, Inc., Sunnyvale Technik zum elektrochemischen Abscheiden einer Legierung mit chemischer Ordnung
CN102492971B (zh) * 2011-12-28 2014-09-17 无锡科硅电子技术有限公司 用于半导体基片表面进行电镀的装置
CN102560587B (zh) * 2012-02-08 2015-03-18 南通富士通微电子股份有限公司 电镀装置
CN103422150A (zh) * 2012-05-22 2013-12-04 泰州宏瑞新材料有限责任公司 用于电镀的重金属离子浓度调节槽及电镀装置
JP5692268B2 (ja) * 2013-03-25 2015-04-01 トヨタ自動車株式会社 金属被膜の成膜装置および成膜方法
WO2021142187A1 (en) * 2020-01-09 2021-07-15 Lam Research Corporation High-speed 3d metal printing of semiconductor metal interconnects

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0079032A1 (de) * 1981-11-06 1983-05-18 Bayerische Motoren Werke Aktiengesellschaft, Patentabteilung AJ-3 Vorrichtung zum galvanischen Beschichten eines metallischen Werkstücks
EP0398735A2 (en) * 1989-05-19 1990-11-22 Sun Industrial Coatings Private Limited Plating system
JPH04362199A (ja) * 1991-06-06 1992-12-15 Nec Corp 電気めっき装置
US5723028A (en) * 1990-08-01 1998-03-03 Poris; Jaime Electrodeposition apparatus with virtual anode

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04284691A (ja) * 1991-03-13 1992-10-09 Arumetsukusu:Kk プリント配線板の電気めっき方法
JPH05339800A (ja) * 1992-06-09 1993-12-21 Nec Corp 可溶性アノードと不溶性アノードを持つ噴流めっき装置
TW405158B (en) * 1997-09-17 2000-09-11 Ebara Corp Plating apparatus for semiconductor wafer processing
WO1999016936A1 (en) * 1997-09-30 1999-04-08 Semitool, Inc. Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations
US6024856A (en) * 1997-10-10 2000-02-15 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes
JP3187011B2 (ja) * 1998-08-31 2001-07-11 日本電気株式会社 半導体装置の製造方法
US6197182B1 (en) * 1999-07-07 2001-03-06 Technic Inc. Apparatus and method for plating wafers, substrates and other articles

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0079032A1 (de) * 1981-11-06 1983-05-18 Bayerische Motoren Werke Aktiengesellschaft, Patentabteilung AJ-3 Vorrichtung zum galvanischen Beschichten eines metallischen Werkstücks
EP0398735A2 (en) * 1989-05-19 1990-11-22 Sun Industrial Coatings Private Limited Plating system
US5723028A (en) * 1990-08-01 1998-03-03 Poris; Jaime Electrodeposition apparatus with virtual anode
JPH04362199A (ja) * 1991-06-06 1992-12-15 Nec Corp 電気めっき装置

Also Published As

Publication number Publication date
US6413390B1 (en) 2002-07-02
WO2002029875A3 (en) 2002-08-15
CN1529903A (zh) 2004-09-15
TW525245B (en) 2003-03-21
EP1323186B1 (en) 2009-10-28
WO2002029875A2 (en) 2002-04-11
DE60140305D1 (de) 2009-12-10
JP2004510888A (ja) 2004-04-08
KR100747132B1 (ko) 2007-08-09
AU2001275274A1 (en) 2002-04-15
EP1323186A2 (en) 2003-07-02
KR20040007399A (ko) 2004-01-24

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Owner name: GLOBALFOUNDRIES

Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC.

Effective date: 20100705

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: CALIFORNIA, THE UNITED STATES TO: CAYMAN ISLANDS, BRITISH

TR01 Transfer of patent right

Effective date of registration: 20100705

Address after: Grand Cayman, Cayman Islands

Patentee after: Globalfoundries Semiconductor Inc.

Address before: American California

Patentee before: Advanced Micro Devices Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070822

Termination date: 20160604