DE60140194D1 - Einkristall-schneideverfahren - Google Patents

Einkristall-schneideverfahren

Info

Publication number
DE60140194D1
DE60140194D1 DE60140194T DE60140194T DE60140194D1 DE 60140194 D1 DE60140194 D1 DE 60140194D1 DE 60140194 T DE60140194 T DE 60140194T DE 60140194 T DE60140194 T DE 60140194T DE 60140194 D1 DE60140194 D1 DE 60140194D1
Authority
DE
Germany
Prior art keywords
cutting method
monocrystal
monocrystal cutting
cutting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60140194T
Other languages
English (en)
Inventor
Tadahiro Ohmi
S Sugawa
T Shinohara
T Ito
K Kanaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18706485&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60140194(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE60140194D1 publication Critical patent/DE60140194D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/123—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of particular gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
DE60140194T 2000-07-11 2001-07-06 Einkristall-schneideverfahren Expired - Lifetime DE60140194D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000210192A JP3530114B2 (ja) 2000-07-11 2000-07-11 単結晶の切断方法
PCT/JP2001/005891 WO2002011194A1 (fr) 2000-07-11 2001-07-06 Procede de decoupe d'un monocristal

Publications (1)

Publication Number Publication Date
DE60140194D1 true DE60140194D1 (de) 2009-11-26

Family

ID=18706485

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60140194T Expired - Lifetime DE60140194D1 (de) 2000-07-11 2001-07-06 Einkristall-schneideverfahren

Country Status (6)

Country Link
US (1) US6958094B2 (de)
EP (1) EP1306892B1 (de)
JP (1) JP3530114B2 (de)
DE (1) DE60140194D1 (de)
TW (1) TW503142B (de)
WO (1) WO2002011194A1 (de)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002184724A (ja) * 2000-12-13 2002-06-28 Komatsu Ltd シリコンインゴット切断装置、シリコンインゴットの切断方法、及びシリコンウェハ
US6709103B1 (en) 2002-10-31 2004-03-23 Johnson & Johnson Vision Care, Inc. Methods for designing multifocal ophthalmic lenses
WO2005032757A1 (en) * 2003-09-30 2005-04-14 Matsushita Electric Industrial Co. Ltd. Mold for optical components
US7524708B2 (en) * 2005-02-28 2009-04-28 Neosemitech Corporation Fabrication method of a high brightness light emitting diode with a bidirectionally angled substrate
US7387948B2 (en) * 2005-08-04 2008-06-17 Grace Semiconductor Manufacturing Corporation Structure and method of forming a semiconductor material wafer
US8835802B2 (en) * 2006-01-24 2014-09-16 Stephen C. Baer Cleaving wafers from silicon crystals
JP2008177374A (ja) * 2007-01-18 2008-07-31 Eudyna Devices Inc 半導体装置及びその製造方法
DE102009005303A1 (de) * 2009-01-16 2010-07-22 BIAS - Bremer Institut für angewandte Strahltechnik GmbH Verfahren zum Separieren eines Halbleiter-Wafer von einem Halbleiterkristall
JP2013021263A (ja) * 2011-07-14 2013-01-31 Dainippon Screen Mfg Co Ltd 膜剥離装置および膜剥離方法
DE102011088054A1 (de) * 2011-12-08 2013-06-13 Solarworld Innovations Gmbh Verfahren zum Herstellen von Silizium-Wafern
JP5727433B2 (ja) * 2012-09-04 2015-06-03 イムラ アメリカ インコーポレイテッド 超短パルスレーザでの透明材料処理
WO2014079478A1 (en) 2012-11-20 2014-05-30 Light In Light Srl High speed laser processing of transparent materials
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
EP2781296B1 (de) 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser
US9850160B2 (en) 2013-12-17 2017-12-26 Corning Incorporated Laser cutting of display glass compositions
US9701563B2 (en) 2013-12-17 2017-07-11 Corning Incorporated Laser cut composite glass article and method of cutting
US20150165560A1 (en) 2013-12-17 2015-06-18 Corning Incorporated Laser processing of slots and holes
US9517963B2 (en) 2013-12-17 2016-12-13 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
US10442719B2 (en) 2013-12-17 2019-10-15 Corning Incorporated Edge chamfering methods
US11556039B2 (en) 2013-12-17 2023-01-17 Corning Incorporated Electrochromic coated glass articles and methods for laser processing the same
US9815730B2 (en) 2013-12-17 2017-11-14 Corning Incorporated Processing 3D shaped transparent brittle substrate
US9676167B2 (en) 2013-12-17 2017-06-13 Corning Incorporated Laser processing of sapphire substrate and related applications
WO2016007572A1 (en) 2014-07-08 2016-01-14 Corning Incorporated Methods and apparatuses for laser processing materials
JP6788571B2 (ja) 2014-07-14 2020-11-25 コーニング インコーポレイテッド 界面ブロック、そのような界面ブロックを使用する、ある波長範囲内で透過する基板を切断するためのシステムおよび方法
CN208586209U (zh) 2014-07-14 2019-03-08 康宁股份有限公司 一种用于在工件中形成限定轮廓的多个缺陷的系统
KR20170028943A (ko) * 2014-07-14 2017-03-14 코닝 인코포레이티드 조정가능한 레이저 빔 촛점 라인을 사용하여 투명한 재료를 처리하는 방법 및 시스템
EP3169479B1 (de) 2014-07-14 2019-10-02 Corning Incorporated Verfahren und system zum stoppen von inzidenter rissausbreitung in einem transparenten material
DE102015215235A1 (de) * 2014-08-08 2016-02-11 Ceramtec-Etec Gmbh Verfahren zur Herstellung dünner Substrate
US10047001B2 (en) 2014-12-04 2018-08-14 Corning Incorporated Glass cutting systems and methods using non-diffracting laser beams
JP2018507154A (ja) 2015-01-12 2018-03-15 コーニング インコーポレイテッド マルチフォトン吸収方法を用いた熱強化基板のレーザー切断
JP7292006B2 (ja) 2015-03-24 2023-06-16 コーニング インコーポレイテッド ディスプレイガラス組成物のレーザ切断及び加工
JP2018516215A (ja) 2015-03-27 2018-06-21 コーニング インコーポレイテッド 気体透過性窓、および、その製造方法
JP7082042B2 (ja) 2015-07-10 2022-06-07 コーニング インコーポレイテッド 可撓性基体シートに孔を連続形成する方法およびそれに関する製品
CN109311725B (zh) 2016-05-06 2022-04-26 康宁股份有限公司 从透明基材激光切割及移除轮廓形状
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
JP7090594B2 (ja) 2016-07-29 2022-06-24 コーニング インコーポレイテッド レーザ加工するための装置および方法
EP3507057A1 (de) 2016-08-30 2019-07-10 Corning Incorporated Laserbearbeitung von transparenten materialien
JP6923284B2 (ja) 2016-09-30 2021-08-18 コーニング インコーポレイテッド 非軸対称ビームスポットを用いて透明被加工物をレーザ加工するための装置及び方法
EP3848333A1 (de) 2016-10-24 2021-07-14 Corning Incorporated Substratverarbeitungsstation zur laserbasierten verarbeitung von flächigen glassubstraten
US10752534B2 (en) 2016-11-01 2020-08-25 Corning Incorporated Apparatuses and methods for laser processing laminate workpiece stacks
US10688599B2 (en) 2017-02-09 2020-06-23 Corning Incorporated Apparatus and methods for laser processing transparent workpieces using phase shifted focal lines
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US10626040B2 (en) 2017-06-15 2020-04-21 Corning Incorporated Articles capable of individual singulation
FR3070538B1 (fr) * 2017-08-30 2020-02-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de desassemblage d'un module photovoltaique et installation associee
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US11377758B2 (en) 2020-11-23 2022-07-05 Stephen C. Baer Cleaving thin wafers from crystals

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS588128B2 (ja) * 1979-08-05 1983-02-14 山崎 舜平 半導体装置作製方法
JPS62188325A (ja) * 1986-02-14 1987-08-17 Sumitomo Electric Ind Ltd 化合物半導体のｏｆ面出し方法及び装置
JPS62226891A (ja) 1986-03-28 1987-10-05 Shin Etsu Handotai Co Ltd 半導体装置用基板
JP2536588B2 (ja) 1988-04-25 1996-09-18 三菱電機株式会社 分解除去装置
JP3061634B2 (ja) * 1990-11-09 2000-07-10 株式会社フジクラ 酸化物超電導テープ導体
JPH05299500A (ja) * 1992-04-22 1993-11-12 Kobe Steel Ltd シリコン基板の切断加工方法
TW350095B (en) * 1995-11-21 1999-01-11 Daido Hoxan Inc Cutting method and apparatus for semiconductor materials
JP3485136B2 (ja) 1995-11-21 2004-01-13 エア・ウォーター株式会社 ウエハの製法およびそれに用いる装置
JPH11347758A (ja) * 1998-06-10 1999-12-21 Mitsubishi Heavy Ind Ltd 超精密加工装置

Also Published As

Publication number Publication date
JP2002025949A (ja) 2002-01-25
WO2002011194A1 (fr) 2002-02-07
TW503142B (en) 2002-09-21
EP1306892B1 (de) 2009-10-14
EP1306892A1 (de) 2003-05-02
US6958094B2 (en) 2005-10-25
US20030155335A1 (en) 2003-08-21
JP3530114B2 (ja) 2004-05-24
EP1306892A4 (de) 2007-10-10

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Legal Events

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8364 No opposition during term of opposition