DE60139130D1 - Schaltungsstrukturen für hohe temperaturen - Google Patents
Schaltungsstrukturen für hohe temperaturenInfo
- Publication number
- DE60139130D1 DE60139130D1 DE60139130T DE60139130T DE60139130D1 DE 60139130 D1 DE60139130 D1 DE 60139130D1 DE 60139130 T DE60139130 T DE 60139130T DE 60139130 T DE60139130 T DE 60139130T DE 60139130 D1 DE60139130 D1 DE 60139130D1
- Authority
- DE
- Germany
- Prior art keywords
- high temperatures
- circuit structures
- structures
- circuit
- temperatures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
- Die Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/645,383 US6576972B1 (en) | 2000-08-24 | 2000-08-24 | High temperature circuit structures with expansion matched SiC, AlN and/or AlxGa1-xN(x>0.69) circuit device |
PCT/US2001/023008 WO2002016897A2 (en) | 2000-08-24 | 2001-07-20 | High temperature circuit structures |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60139130D1 true DE60139130D1 (de) | 2009-08-13 |
Family
ID=24588800
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60139130T Expired - Fee Related DE60139130D1 (de) | 2000-08-24 | 2001-07-20 | Schaltungsstrukturen für hohe temperaturen |
Country Status (8)
Country | Link |
---|---|
US (3) | US6576972B1 (de) |
EP (1) | EP1311815B1 (de) |
JP (1) | JP3796218B2 (de) |
CN (2) | CN1256575C (de) |
AU (1) | AU2001280676A1 (de) |
DE (1) | DE60139130D1 (de) |
RU (1) | RU2248538C2 (de) |
WO (1) | WO2002016897A2 (de) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6319757B1 (en) * | 1998-07-08 | 2001-11-20 | Caldus Semiconductor, Inc. | Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates |
WO2001040784A2 (de) * | 1999-11-30 | 2001-06-07 | Sensirion Ag | Sensor in einem gehäuse |
US6989574B2 (en) * | 2000-08-24 | 2006-01-24 | Heetronix | High temperature circuit structures with thin film layer |
DE10061299A1 (de) * | 2000-12-08 | 2002-06-27 | Siemens Ag | Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu |
US6995691B2 (en) * | 2001-02-14 | 2006-02-07 | Heetronix | Bonded structure using reacted borosilicate mixture |
US6546796B2 (en) * | 2001-03-15 | 2003-04-15 | Therm-O-Disc, Incorporated | Liquid level sensor |
US6617175B1 (en) * | 2002-05-08 | 2003-09-09 | Advanced Technology Materials, Inc. | Infrared thermopile detector system for semiconductor process monitoring and control |
US7129519B2 (en) | 2002-05-08 | 2006-10-31 | Advanced Technology Materials, Inc. | Monitoring system comprising infrared thermopile detector |
US7106167B2 (en) * | 2002-06-28 | 2006-09-12 | Heetronix | Stable high temperature sensor system with tungsten on AlN |
US6845664B1 (en) * | 2002-10-03 | 2005-01-25 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | MEMS direct chip attach packaging methodologies and apparatuses for harsh environments |
US7080545B2 (en) | 2002-10-17 | 2006-07-25 | Advanced Technology Materials, Inc. | Apparatus and process for sensing fluoro species in semiconductor processing systems |
US7391005B2 (en) * | 2002-10-25 | 2008-06-24 | Gennum Corporation | Direct attach optical receiver module and method of testing |
US7224910B2 (en) * | 2002-10-25 | 2007-05-29 | Gennum Corporation | Direct attach optical receiver module and method of testing |
US7004622B2 (en) * | 2002-11-22 | 2006-02-28 | General Electric Company | Systems and methods for determining conditions of articles and methods of making such systems |
US7049558B2 (en) * | 2003-01-27 | 2006-05-23 | Arcturas Bioscience, Inc. | Apparatus and method for heating microfluidic volumes and moving fluids |
US7063097B2 (en) * | 2003-03-28 | 2006-06-20 | Advanced Technology Materials, Inc. | In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentration |
WO2004088415A2 (en) * | 2003-03-28 | 2004-10-14 | Advanced Technology Materials Inc. | Photometrically modulated delivery of reagents |
US7306967B1 (en) | 2003-05-28 | 2007-12-11 | Adsem, Inc. | Method of forming high temperature thermistors |
DE10328660B3 (de) * | 2003-06-26 | 2004-12-02 | Infineon Technologies Ag | Verfahren zum Bestimmen der Temperatur eines Halbleiterwafers |
US7187161B2 (en) * | 2003-07-11 | 2007-03-06 | Wabash Magnetics, Llc | Transient protection of sensors |
EP1500982A1 (de) | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
WO2005049957A2 (en) * | 2003-11-18 | 2005-06-02 | Halliburton Energy Services, Inc. | High temperature environment tool system and method |
JP2005203734A (ja) * | 2003-12-15 | 2005-07-28 | Toshiba Ceramics Co Ltd | 金属部材埋設セラミックス品とその製造方法 |
US7292132B1 (en) * | 2003-12-17 | 2007-11-06 | Adsem, Inc. | NTC thermistor probe |
US7812705B1 (en) | 2003-12-17 | 2010-10-12 | Adsem, Inc. | High temperature thermistor probe |
DE102004017799A1 (de) * | 2004-04-05 | 2005-10-20 | Ego Elektro Geraetebau Gmbh | Temperatursensor und Verfahren zur Justierung eines solchen |
US7361946B2 (en) * | 2004-06-28 | 2008-04-22 | Nitronex Corporation | Semiconductor device-based sensors |
US20060211253A1 (en) * | 2005-03-16 | 2006-09-21 | Ing-Shin Chen | Method and apparatus for monitoring plasma conditions in an etching plasma processing facility |
US20080006775A1 (en) * | 2006-06-22 | 2008-01-10 | Arno Jose I | Infrared gas detection systems and methods |
US7412881B2 (en) * | 2006-07-31 | 2008-08-19 | Chevron U.S.A. Inc. | Fluid flowrate determination |
DE202006017648U1 (de) * | 2006-11-20 | 2007-02-15 | Atlas Material Testing Technology Gmbh | Vorrichtung zum Ableiten von Flüssigkeitstropfen von einem Temperatursensor |
US20080311360A1 (en) * | 2006-12-18 | 2008-12-18 | Koa Corporation | Thick film circuit component and method for manufacturing the same |
US8138027B2 (en) | 2008-03-07 | 2012-03-20 | Stats Chippac, Ltd. | Optical semiconductor device having pre-molded leadframe with window and method therefor |
US20090251960A1 (en) * | 2008-04-07 | 2009-10-08 | Halliburton Energy Services, Inc. | High temperature memory device |
DE102008036837A1 (de) * | 2008-08-07 | 2010-02-18 | Epcos Ag | Sensorvorrichtung und Verfahren zur Herstellung |
FR2936097B1 (fr) * | 2008-09-12 | 2010-10-29 | Alstom Transport Sa | Procede d'encapsulation d'un composant electronique a semi-conducteur. |
US7938016B2 (en) * | 2009-03-20 | 2011-05-10 | Freescale Semiconductor, Inc. | Multiple layer strain gauge |
US9340878B2 (en) | 2009-05-29 | 2016-05-17 | Entegris, Inc. | TPIR apparatus for monitoring tungsten hexafluoride processing to detect gas phase nucleation, and method and system utilizing same |
TWI421477B (zh) * | 2010-08-30 | 2014-01-01 | Emcom Technology Inc | 溫度變化感應裝置及其方法 |
US10346276B2 (en) | 2010-12-16 | 2019-07-09 | Microsoft Technology Licensing, Llc | Kernel awareness of physical environment |
JP2012189571A (ja) * | 2011-02-24 | 2012-10-04 | Renesas Electronics Corp | 半導体装置及びその製造方法 |
US9046426B1 (en) | 2012-06-15 | 2015-06-02 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Modular apparatus and method for attaching multiple devices |
CN102842398B (zh) * | 2012-08-27 | 2015-08-26 | 华中科技大学 | 一种片式陶瓷敏感元件的制备方法及其相应产品 |
DE102012109704A1 (de) * | 2012-10-11 | 2014-04-17 | Epcos Ag | Keramisches Bauelement mit Schutzschicht und Verfahren zu dessen Herstellung |
JP1528936S (de) * | 2015-01-14 | 2015-07-13 | ||
JP1528484S (de) * | 2015-01-14 | 2015-07-13 | ||
JP1528485S (de) * | 2015-01-14 | 2015-07-13 | ||
TWD190983S (zh) * | 2017-02-17 | 2018-06-11 | 三星電子股份有限公司 | 固態硬碟儲存裝置 |
KR101923074B1 (ko) | 2017-03-21 | 2018-11-28 | 부경대학교 산학협력단 | 저온 센서용 금 나노입자-실리콘 복합소재 |
EP3406758A1 (de) * | 2017-05-22 | 2018-11-28 | Vishay Electronic GmbH | Verfahren zur herstellung eines ntcr-sensors |
DE112018006712T5 (de) * | 2017-12-27 | 2020-09-10 | Murata Manufacturing Co., Ltd. | Thermometer von Haftausführung |
USD869469S1 (en) * | 2018-04-09 | 2019-12-10 | Samsung Electronics Co., Ltd. | SSD storage device |
AU201815958S (en) * | 2018-04-09 | 2018-11-06 | Samsung Electronics Co Ltd | SSD Storage Device |
US11371892B2 (en) * | 2019-06-28 | 2022-06-28 | Fluke Corporation | Platinum resistance temperature sensor having floating platinum member |
US11482449B2 (en) | 2020-08-03 | 2022-10-25 | General Electric Company | Electrical component with a dielectric passivation stack |
CN112798126B (zh) * | 2021-04-08 | 2021-07-02 | 成都蓉矽半导体有限公司 | 一种高灵敏度的碳化硅可集成温度传感器 |
CN114314503B (zh) * | 2021-12-31 | 2024-08-27 | 深圳市信为科技发展有限公司 | 具有微细多引线的压力传感器的封装方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6019641B2 (ja) * | 1980-02-26 | 1985-05-17 | 松下電器産業株式会社 | サ−ミスタ |
DE3569824D1 (en) * | 1985-09-11 | 1989-06-01 | Kunz Manfred | Pressure sensor |
JP3118667B2 (ja) * | 1992-03-09 | 2000-12-18 | 株式会社トーキン | 絶対湿度センサ |
US5363084A (en) * | 1993-02-26 | 1994-11-08 | Lake Shore Cryotronics, Inc. | Film resistors having trimmable electrodes |
US5635635A (en) * | 1993-11-18 | 1997-06-03 | Unisia Jecs Corporation | Method and apparatus for detecting the intake air quantity of an engine |
US5668524A (en) * | 1994-02-09 | 1997-09-16 | Kyocera Corporation | Ceramic resistor and electrostatic chuck having an aluminum nitride crystal phase |
EP0878707A4 (de) * | 1996-10-22 | 2000-06-28 | Riken Kk | Sensor mit heizung |
US6025609A (en) * | 1996-12-05 | 2000-02-15 | Quick; Nathaniel R. | Laser synthesized ceramic electronic devices and circuits and method for making |
US6319757B1 (en) * | 1998-07-08 | 2001-11-20 | Caldus Semiconductor, Inc. | Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates |
US6239432B1 (en) * | 1999-05-21 | 2001-05-29 | Hetron | IR radiation sensing with SIC |
US6291884B1 (en) * | 1999-11-09 | 2001-09-18 | Amkor Technology, Inc. | Chip-size semiconductor packages |
-
2000
- 2000-08-24 US US09/645,383 patent/US6576972B1/en not_active Expired - Fee Related
-
2001
- 2001-07-20 WO PCT/US2001/023008 patent/WO2002016897A2/en active Application Filing
- 2001-07-20 CN CNB018177689A patent/CN1256575C/zh not_active Expired - Fee Related
- 2001-07-20 AU AU2001280676A patent/AU2001280676A1/en not_active Abandoned
- 2001-07-20 RU RU2003107836/28A patent/RU2248538C2/ru not_active IP Right Cessation
- 2001-07-20 JP JP2002521945A patent/JP3796218B2/ja not_active Expired - Fee Related
- 2001-07-20 CN CNA2005101250448A patent/CN1773231A/zh active Pending
- 2001-07-20 DE DE60139130T patent/DE60139130D1/de not_active Expired - Fee Related
- 2001-07-20 EP EP01959086A patent/EP1311815B1/de not_active Expired - Lifetime
-
2002
- 2002-06-20 US US10/175,933 patent/US6765278B2/en not_active Expired - Fee Related
- 2002-06-20 US US10/175,940 patent/US6649994B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
AU2001280676A1 (en) | 2002-03-04 |
EP1311815A2 (de) | 2003-05-21 |
CN1256575C (zh) | 2006-05-17 |
EP1311815B1 (de) | 2009-07-01 |
CN1773231A (zh) | 2006-05-17 |
US6765278B2 (en) | 2004-07-20 |
JP2004507728A (ja) | 2004-03-11 |
US6576972B1 (en) | 2003-06-10 |
WO2002016897A3 (en) | 2002-05-02 |
US20030146502A1 (en) | 2003-08-07 |
RU2248538C2 (ru) | 2005-03-20 |
WO2002016897A2 (en) | 2002-02-28 |
JP3796218B2 (ja) | 2006-07-12 |
CN1471632A (zh) | 2004-01-28 |
US20020179992A1 (en) | 2002-12-05 |
US6649994B2 (en) | 2003-11-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |