DE60136007D1 - Verfahren zur herstellung einer stapelstruktur - Google Patents
Verfahren zur herstellung einer stapelstrukturInfo
- Publication number
- DE60136007D1 DE60136007D1 DE60136007T DE60136007T DE60136007D1 DE 60136007 D1 DE60136007 D1 DE 60136007D1 DE 60136007 T DE60136007 T DE 60136007T DE 60136007 T DE60136007 T DE 60136007T DE 60136007 D1 DE60136007 D1 DE 60136007D1
- Authority
- DE
- Germany
- Prior art keywords
- crystalline
- tilt angle
- structures
- face
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Micromachines (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Fuel Cell (AREA)
- Turbine Rotor Nozzle Sealing (AREA)
- Seeds, Soups, And Other Foods (AREA)
- Manipulator (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0017215A FR2819099B1 (fr) | 2000-12-28 | 2000-12-28 | Procede de realisation d'une structure empilee |
PCT/FR2001/004130 WO2002054466A1 (fr) | 2000-12-28 | 2001-12-27 | Procede de realisation d'une structure empilee |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60136007D1 true DE60136007D1 (de) | 2008-11-13 |
Family
ID=8858336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60136007T Expired - Lifetime DE60136007D1 (de) | 2000-12-28 | 2001-12-27 | Verfahren zur herstellung einer stapelstruktur |
Country Status (7)
Country | Link |
---|---|
US (1) | US7229897B2 (de) |
EP (1) | EP1346402B1 (de) |
JP (1) | JP4167065B2 (de) |
AT (1) | ATE409955T1 (de) |
DE (1) | DE60136007D1 (de) |
FR (1) | FR2819099B1 (de) |
WO (1) | WO2002054466A1 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
FR2848336B1 (fr) | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | Procede de realisation d'une structure contrainte destinee a etre dissociee |
FR2850487B1 (fr) * | 2002-12-24 | 2005-12-09 | Commissariat Energie Atomique | Procede de realisation de substrats mixtes et structure ainsi obtenue |
FR2856844B1 (fr) | 2003-06-24 | 2006-02-17 | Commissariat Energie Atomique | Circuit integre sur puce de hautes performances |
FR2857953B1 (fr) | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | Structure empilee, et procede pour la fabriquer |
FR2861497B1 (fr) | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | Procede de transfert catastrophique d'une couche fine apres co-implantation |
JP2005279843A (ja) * | 2004-03-29 | 2005-10-13 | Univ Of Tokyo | 細線を含む結晶材料とその製造方法、およびこれを用いたナノ細線デバイス |
FR2876498B1 (fr) | 2004-10-12 | 2008-03-14 | Commissariat Energie Atomique | Procede de realisation d'heterostructures resonnantes a transport planaire |
FR2877662B1 (fr) | 2004-11-09 | 2007-03-02 | Commissariat Energie Atomique | Reseau de particules et procede de realisation d'un tel reseau. |
US7422956B2 (en) | 2004-12-08 | 2008-09-09 | Advanced Micro Devices, Inc. | Semiconductor device and method of making semiconductor device comprising multiple stacked hybrid orientation layers |
FR2889887B1 (fr) | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
FR2891281B1 (fr) | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | Procede de fabrication d'un element en couches minces. |
FR2895391B1 (fr) * | 2005-12-27 | 2008-01-25 | Commissariat Energie Atomique | Procede d'elaboration de nanostructures ordonnees |
FR2895419B1 (fr) * | 2005-12-27 | 2008-02-22 | Commissariat Energie Atomique | Procede de realisation simplifiee d'une structure epitaxiee |
FR2895571B1 (fr) * | 2005-12-28 | 2008-04-18 | Commissariat Energie Atomique | Procede de realisation d'une jonction pn electroluminescente en materiau semi-conducteur par collage moleculaire |
FR2903810B1 (fr) | 2006-07-13 | 2008-10-10 | Commissariat Energie Atomique | Procede de nanostructuration de la surface d'un substrat |
JP2008060355A (ja) * | 2006-08-31 | 2008-03-13 | Sumco Corp | 貼り合わせウェーハの製造方法および貼り合わせウェーハ |
FR2910179B1 (fr) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
FR2925221B1 (fr) | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | Procede de transfert d'une couche mince |
US8129256B2 (en) * | 2008-08-19 | 2012-03-06 | International Business Machines Corporation | 3D integrated circuit device fabrication with precisely controllable substrate removal |
FR2937797B1 (fr) * | 2008-10-28 | 2010-12-24 | S O I Tec Silicon On Insulator Tech | Procede de fabrication et de traitement d'une structure de type semi-conducteur sur isolant, permettant de deplacer des dislocations, et structure correspondante |
FR2942674B1 (fr) * | 2009-02-27 | 2011-12-16 | Commissariat Energie Atomique | Procede d'elaboration d'un substrat hybride par recristallisation partielle d'une couche mixte |
FR2947098A1 (fr) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
US8367519B2 (en) * | 2009-12-30 | 2013-02-05 | Memc Electronic Materials, Inc. | Method for the preparation of a multi-layered crystalline structure |
FR2975109B1 (fr) | 2011-05-13 | 2013-07-05 | Commissariat Energie Atomique | Procede de realisation d'une structure a reseau bidimensionnel de dislocations coin a periode maitrisee |
JP2013001624A (ja) * | 2011-06-21 | 2013-01-07 | Sumitomo Electric Ind Ltd | Iii族窒化物複合基板およびその評価方法 |
SG186759A1 (en) * | 2012-01-23 | 2013-02-28 | Ev Group E Thallner Gmbh | Method and device for permanent bonding of wafers, as well as cutting tool |
FR3039699B1 (fr) | 2015-07-31 | 2017-07-28 | Commissariat Energie Atomique | Procede de realisation d'un dispositif electronique |
FR3109016B1 (fr) * | 2020-04-01 | 2023-12-01 | Soitec Silicon On Insulator | Structure demontable et procede de transfert d’une couche mettant en œuvre ladite structure demontable |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69127582T2 (de) * | 1990-05-18 | 1998-03-26 | Fujitsu Ltd | Verfahren zur Herstellung eines Halbleitersubstrates und Verfahren zur Herstellung einer Halbleiteranordnung unter Verwendung dieses Substrates |
JPH04226031A (ja) * | 1990-05-18 | 1992-08-14 | Fujitsu Ltd | 半導体ウエハの製造方法および該ウエハから成る半導体装置の製造方法 |
JPH05109594A (ja) * | 1991-10-18 | 1993-04-30 | Hitachi Ltd | 半導体基板、その製造方法および半導体装置 |
JPH05251294A (ja) * | 1992-03-06 | 1993-09-28 | Iwao Matsunaga | ガリウム化合物半導体単結晶ウエハ及びその製造方法 |
TW289837B (de) * | 1994-01-18 | 1996-11-01 | Hwelett Packard Co | |
JPH07335511A (ja) * | 1994-06-13 | 1995-12-22 | Nippon Telegr & Teleph Corp <Ntt> | 張り合わせウエハ |
JP2820120B2 (ja) * | 1996-06-03 | 1998-11-05 | 日本電気株式会社 | 半導体基板の製造方法 |
US5783477A (en) * | 1996-09-20 | 1998-07-21 | Hewlett-Packard Company | Method for bonding compounds semiconductor wafers to create an ohmic interface |
EP0995227A4 (de) * | 1997-05-12 | 2000-07-05 | Silicon Genesis Corp | Kontrolliertes spaltungsverfahren |
US6013563A (en) * | 1997-05-12 | 2000-01-11 | Silicon Genesis Corporation | Controlled cleaning process |
JPH1140786A (ja) * | 1997-07-18 | 1999-02-12 | Denso Corp | 半導体基板及びその製造方法 |
FR2766620B1 (fr) * | 1997-07-22 | 2000-12-01 | Commissariat Energie Atomique | Realisation de microstructures ou de nanostructures sur un support |
JP3452122B2 (ja) * | 1998-04-22 | 2003-09-29 | 三菱住友シリコン株式会社 | Soi基板の製造方法 |
-
2000
- 2000-12-28 FR FR0017215A patent/FR2819099B1/fr not_active Expired - Fee Related
-
2001
- 2001-12-27 EP EP01995751A patent/EP1346402B1/de not_active Expired - Lifetime
- 2001-12-27 DE DE60136007T patent/DE60136007D1/de not_active Expired - Lifetime
- 2001-12-27 JP JP2002555464A patent/JP4167065B2/ja not_active Expired - Fee Related
- 2001-12-27 WO PCT/FR2001/004130 patent/WO2002054466A1/fr active IP Right Grant
- 2001-12-27 AT AT01995751T patent/ATE409955T1/de not_active IP Right Cessation
- 2001-12-27 US US10/450,528 patent/US7229897B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1346402B1 (de) | 2008-10-01 |
EP1346402A1 (de) | 2003-09-24 |
US20050101095A1 (en) | 2005-05-12 |
WO2002054466A1 (fr) | 2002-07-11 |
JP2004522296A (ja) | 2004-07-22 |
FR2819099B1 (fr) | 2003-09-26 |
FR2819099A1 (fr) | 2002-07-05 |
JP4167065B2 (ja) | 2008-10-15 |
ATE409955T1 (de) | 2008-10-15 |
US7229897B2 (en) | 2007-06-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |