DE60133057D1 - Polysiliziumevaluierungsverfahren. Polysiliziuminspektionsvorrichtung und Herstellung eines Dünnschichttransistors - Google Patents
Polysiliziumevaluierungsverfahren. Polysiliziuminspektionsvorrichtung und Herstellung eines DünnschichttransistorsInfo
- Publication number
- DE60133057D1 DE60133057D1 DE60133057T DE60133057T DE60133057D1 DE 60133057 D1 DE60133057 D1 DE 60133057D1 DE 60133057 T DE60133057 T DE 60133057T DE 60133057 T DE60133057 T DE 60133057T DE 60133057 D1 DE60133057 D1 DE 60133057D1
- Authority
- DE
- Germany
- Prior art keywords
- polysiliziuminspektionsvorrichtung
- production
- thin film
- film transistor
- evaluation procedures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000005994A JP4556266B2 (ja) | 2000-01-07 | 2000-01-07 | ポリシリコン評価方法、ポリシリコン検査装置、薄膜トランジスタ製造方法、及び、アニール処理装置 |
JP2000005995A JP4572436B2 (ja) | 2000-01-07 | 2000-01-07 | 薄膜トランジスタ製造方法 |
JP2000005995 | 2000-01-07 | ||
JP2000005996 | 2000-01-07 | ||
JP2000005994 | 2000-01-07 | ||
JP2000005996A JP4631116B2 (ja) | 2000-01-07 | 2000-01-07 | 薄膜トランジスタ製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60133057D1 true DE60133057D1 (de) | 2008-04-17 |
DE60133057T2 DE60133057T2 (de) | 2009-02-26 |
Family
ID=27342042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60133057T Expired - Lifetime DE60133057T2 (de) | 2000-01-07 | 2001-01-03 | Polysiliziumevaluierungsverfahren. Polysiliziuminspektionsvorrichtung und Herstellung eines Dünnschichttransistors |
Country Status (5)
Country | Link |
---|---|
US (2) | US20010038105A1 (de) |
EP (1) | EP1115150B1 (de) |
KR (1) | KR100753782B1 (de) |
DE (1) | DE60133057T2 (de) |
TW (1) | TW490802B (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4121735B2 (ja) * | 2001-01-22 | 2008-07-23 | ソニー株式会社 | ポリシリコン膜評価装置 |
JP4278940B2 (ja) | 2002-09-09 | 2009-06-17 | 株式会社 液晶先端技術開発センター | 結晶化装置および結晶化方法 |
US8346497B2 (en) * | 2003-03-26 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for testing semiconductor film, semiconductor device and manufacturing method thereof |
TWI254792B (en) * | 2003-07-01 | 2006-05-11 | Au Optronics Corp | Detecting method and device of laser crystalline silicon |
US7247813B2 (en) * | 2004-10-13 | 2007-07-24 | Advanced Lcd Technologies Development Center Co., Ltd. | Crystallization apparatus using pulsed laser beam |
JP5498659B2 (ja) * | 2008-02-07 | 2014-05-21 | 株式会社半導体エネルギー研究所 | レーザ照射位置安定性評価方法及びレーザ照射装置 |
JP5401115B2 (ja) * | 2009-02-13 | 2014-01-29 | 興和株式会社 | 生物由来の生理活性物質の測定方法及び測定装置 |
TWI612293B (zh) | 2016-11-18 | 2018-01-21 | 財團法人工業技術研究院 | Ltps背板結晶品質檢測裝置及其方法 |
KR20220022016A (ko) * | 2020-08-14 | 2022-02-23 | 삼성디스플레이 주식회사 | 디스플레이 장치의 제조 장치 및 디스플레이 장치의 제조 방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4966455A (en) * | 1988-12-05 | 1990-10-30 | Union Camp Corporation | Real time mottle measuring device and method |
US5864394A (en) * | 1994-06-20 | 1999-01-26 | Kla-Tencor Corporation | Surface inspection system |
US5760100B1 (en) * | 1994-09-06 | 2000-11-14 | Ciba Vision Corp | Extended wear ophthalmic lens |
US5756364A (en) * | 1994-11-29 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method of semiconductor device using a catalyst |
WO1997023806A1 (en) * | 1995-12-26 | 1997-07-03 | Seiko Epson Corporation | Active matrix substrate, production method of active matrix substrate, liquid crystal display device and electronic equipment |
US5825498A (en) * | 1996-02-05 | 1998-10-20 | Micron Technology, Inc. | Ultraviolet light reflectance method for evaluating the surface characteristics of opaque materials |
US5843811A (en) * | 1996-04-10 | 1998-12-01 | University Of Florida | Method of fabricating a crystalline thin film on an amorphous substrate |
US5773329A (en) * | 1996-07-24 | 1998-06-30 | International Business Machines Corporation | Polysilicon grown by pulsed rapid thermal annealing |
JP4556302B2 (ja) * | 2000-07-27 | 2010-10-06 | ソニー株式会社 | 薄膜トランジスタ製造システム及び方法、ポリシリコン評価方法及びポリシリコン検査装置 |
-
2000
- 2000-12-30 TW TW089128437A patent/TW490802B/zh not_active IP Right Cessation
-
2001
- 2001-01-03 DE DE60133057T patent/DE60133057T2/de not_active Expired - Lifetime
- 2001-01-03 EP EP01100258A patent/EP1115150B1/de not_active Expired - Lifetime
- 2001-01-06 KR KR1020010000722A patent/KR100753782B1/ko not_active IP Right Cessation
- 2001-01-08 US US09/756,309 patent/US20010038105A1/en not_active Abandoned
-
2003
- 2003-03-24 US US10/394,223 patent/US6933185B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100753782B1 (ko) | 2007-08-31 |
US20010038105A1 (en) | 2001-11-08 |
US6933185B2 (en) | 2005-08-23 |
TW490802B (en) | 2002-06-11 |
EP1115150B1 (de) | 2008-03-05 |
KR20010070446A (ko) | 2001-07-25 |
US20030183853A1 (en) | 2003-10-02 |
DE60133057T2 (de) | 2009-02-26 |
EP1115150A2 (de) | 2001-07-11 |
EP1115150A3 (de) | 2004-10-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |