AU2001262623A1 - A thin film field effect transistor - Google Patents
A thin film field effect transistorInfo
- Publication number
- AU2001262623A1 AU2001262623A1 AU2001262623A AU6262301A AU2001262623A1 AU 2001262623 A1 AU2001262623 A1 AU 2001262623A1 AU 2001262623 A AU2001262623 A AU 2001262623A AU 6262301 A AU6262301 A AU 6262301A AU 2001262623 A1 AU2001262623 A1 AU 2001262623A1
- Authority
- AU
- Australia
- Prior art keywords
- thin film
- field effect
- effect transistor
- film field
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0012798A GB2362755A (en) | 2000-05-25 | 2000-05-25 | Thin film field effect transistor with a conical structure |
| GB0012798 | 2000-05-25 | ||
| PCT/IL2001/000477 WO2001091192A1 (en) | 2000-05-25 | 2001-05-24 | A thin film field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001262623A1 true AU2001262623A1 (en) | 2001-12-03 |
Family
ID=9892403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001262623A Abandoned AU2001262623A1 (en) | 2000-05-25 | 2001-05-24 | A thin film field effect transistor |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6720617B2 (en) |
| AU (1) | AU2001262623A1 (en) |
| GB (1) | GB2362755A (en) |
| WO (1) | WO2001091192A1 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100485177B1 (en) * | 2002-12-05 | 2005-04-22 | 동부아남반도체 주식회사 | MOS transistor and fabrication method thereof |
| JP3828511B2 (en) * | 2003-06-26 | 2006-10-04 | 株式会社東芝 | Manufacturing method of semiconductor device |
| US20080282967A1 (en) * | 2004-06-16 | 2008-11-20 | Moshe Einav | Crystal Growth Method and Apparatus |
| US7288821B2 (en) * | 2005-04-08 | 2007-10-30 | International Business Machines Corporation | Structure and method of three dimensional hybrid orientation technology |
| US20080210124A1 (en) * | 2007-03-01 | 2008-09-04 | Xerox Corporation | Core-shell polymer particles |
| JP5933300B2 (en) * | 2011-03-16 | 2016-06-08 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| US8847233B2 (en) | 2011-05-12 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film |
| JP2013042117A (en) * | 2011-07-15 | 2013-02-28 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| CN106252352B (en) * | 2016-09-30 | 2019-03-29 | 中国科学院微电子研究所 | Semiconductor arrangement, method for manufacturing the same and electronic device comprising the arrangement |
| CN112382637A (en) * | 2020-11-11 | 2021-02-19 | 京东方科技集团股份有限公司 | Display back plate, preparation method thereof and display device |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4003036A (en) * | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
| JPS5537250U (en) * | 1978-08-31 | 1980-03-10 | ||
| US4272302A (en) * | 1979-09-05 | 1981-06-09 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation |
| FR2466101A1 (en) * | 1979-09-18 | 1981-03-27 | Thomson Csf | PROCESS FOR FORMING POLYCRYSTALLINE SILICON LAYERS LOCATED ON SILICON-COATED SILICA REGIONS AND APPLICATION TO THE MANUFACTURE OF AN AUTOALIGNAL NON-PLANAR MOS TRANSISTOR |
| US4335450A (en) * | 1980-01-30 | 1982-06-15 | International Business Machines Corporation | Non-destructive read out field effect transistor memory cell system |
| FR2513016A1 (en) * | 1981-09-14 | 1983-03-18 | Radiotechnique Compelec | HIGH VOLTAGE TRANSFORMER V MOS AND METHOD FOR MANUFACTURING THE SAME |
| JPS58106870A (en) * | 1981-12-18 | 1983-06-25 | Nissan Motor Co Ltd | Power metal oxide semiconductor field-effect transistor |
| KR920010963A (en) | 1990-11-23 | 1992-06-27 | 오가 노리오 | SOI type vertical channel FET and manufacturing method thereof |
| US5229310A (en) | 1991-05-03 | 1993-07-20 | Motorola, Inc. | Method for making a self-aligned vertical thin-film transistor in a semiconductor device |
| KR950001159B1 (en) | 1991-12-27 | 1995-02-11 | 삼성전자 주식회사 | Tft and its manufacturing method for memory device |
| US5283456A (en) | 1992-06-17 | 1994-02-01 | International Business Machines Corporation | Vertical gate transistor with low temperature epitaxial channel |
| US5391505A (en) * | 1993-11-01 | 1995-02-21 | Lsi Logic Corporation | Active device constructed in opening formed in insulation layer and process for making same |
| US5757038A (en) | 1995-11-06 | 1998-05-26 | International Business Machines Corporation | Self-aligned dual gate MOSFET with an ultranarrow channel |
| KR100223886B1 (en) | 1995-12-26 | 1999-10-15 | 구본준 | A semiconductor device and method for producing the same |
| US5689127A (en) | 1996-03-05 | 1997-11-18 | International Business Machines Corporation | Vertical double-gate field effect transistor |
| JPH10290007A (en) | 1997-04-14 | 1998-10-27 | Sharp Corp | Semiconductor device and its manufacture |
-
2000
- 2000-05-25 GB GB0012798A patent/GB2362755A/en not_active Withdrawn
-
2001
- 2001-05-23 US US09/863,838 patent/US6720617B2/en not_active Expired - Lifetime
- 2001-05-24 AU AU2001262623A patent/AU2001262623A1/en not_active Abandoned
- 2001-05-24 WO PCT/IL2001/000477 patent/WO2001091192A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| GB2362755A (en) | 2001-11-28 |
| GB0012798D0 (en) | 2000-07-19 |
| US20020000619A1 (en) | 2002-01-03 |
| WO2001091192A1 (en) | 2001-11-29 |
| US6720617B2 (en) | 2004-04-13 |
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