DE60128546D1 - Halbleiterdiodenlaser mit verbesserter Strahldivergenz - Google Patents

Halbleiterdiodenlaser mit verbesserter Strahldivergenz

Info

Publication number
DE60128546D1
DE60128546D1 DE60128546T DE60128546T DE60128546D1 DE 60128546 D1 DE60128546 D1 DE 60128546D1 DE 60128546 T DE60128546 T DE 60128546T DE 60128546 T DE60128546 T DE 60128546T DE 60128546 D1 DE60128546 D1 DE 60128546D1
Authority
DE
Germany
Prior art keywords
refractive index
diode laser
semiconductor diode
waveguide
beam divergence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60128546T
Other languages
English (en)
Other versions
DE60128546T2 (de
Inventor
Dimitri Z Garbuzov
Viktor B Khalfin
John C Connolly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trumpf Photonics Inc
Original Assignee
Trumpf Photonics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trumpf Photonics Inc filed Critical Trumpf Photonics Inc
Application granted granted Critical
Publication of DE60128546D1 publication Critical patent/DE60128546D1/de
Publication of DE60128546T2 publication Critical patent/DE60128546T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
DE60128546T 2000-01-20 2001-01-19 Halbleiterdiodenlaser mit verbesserter Strahldivergenz Expired - Lifetime DE60128546T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US17690900P 2000-01-20 2000-01-20
US176909P 2000-01-20
US09/553,551 US6650671B1 (en) 2000-01-20 2000-04-20 Semiconductor diode lasers with improved beam divergence
US553551 2000-04-20
PCT/US2001/001971 WO2001057974A1 (en) 2000-01-20 2001-01-19 Semiconductor diode lasers with improved beam divergence priority

Publications (2)

Publication Number Publication Date
DE60128546D1 true DE60128546D1 (de) 2007-07-05
DE60128546T2 DE60128546T2 (de) 2008-01-31

Family

ID=26872738

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60128546T Expired - Lifetime DE60128546T2 (de) 2000-01-20 2001-01-19 Halbleiterdiodenlaser mit verbesserter Strahldivergenz

Country Status (7)

Country Link
US (1) US6650671B1 (de)
EP (1) EP1258062B1 (de)
JP (1) JP2003524890A (de)
AT (1) ATE363141T1 (de)
CA (1) CA2398829A1 (de)
DE (1) DE60128546T2 (de)
WO (1) WO2001057974A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2833418B1 (fr) * 2001-12-06 2004-04-09 Cit Alcatel Composant optique de type laser a semiconducteur
US6993053B2 (en) * 2002-04-03 2006-01-31 The Australian National University Thin clad diode laser
US7251381B2 (en) * 2002-04-03 2007-07-31 The Australian National University Single-mode optical device
JP3525257B1 (ja) * 2002-11-01 2004-05-10 アンリツ株式会社 半導体発光素子
EP1601028A4 (de) * 2004-01-28 2012-09-12 Anritsu Corp Optisches halbleiterbauelement und verfahren zu seiner herstellung
JP4842668B2 (ja) * 2006-02-24 2011-12-21 シャープ株式会社 半導体レーザ素子とその製造方法、および光無線通信用送信装置、光ディスク装置
EP2015412B1 (de) * 2007-07-06 2022-03-09 Lumentum Operations LLC Halbleiter-Laser mit schmaler Strahldivergenz.
US8571080B2 (en) * 2009-12-02 2013-10-29 Massachusetts Institute Of Technology High efficiency slab-coupled optical waveguide laser and amplifier
DE102010040767B4 (de) * 2010-09-14 2014-01-30 Forschungsverbund Berlin E.V. Laserdiode mit hoher Effizienz und hoher Augensicherheit

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
JPH069282B2 (ja) * 1988-09-09 1994-02-02 株式会社東芝 半導体レーザ装置
JP2775950B2 (ja) * 1990-01-12 1998-07-16 日本電気株式会社 半導体レーザ
JP2689698B2 (ja) * 1990-07-19 1997-12-10 国際電信電話株式会社 αパラメータ符号を反転させた半導体素子
JPH04186687A (ja) * 1990-11-17 1992-07-03 Seiko Epson Corp 半導体レーザ
JP3053139B2 (ja) * 1992-03-27 2000-06-19 株式会社日立製作所 歪量子井戸半導体レーザ
US5301202A (en) * 1993-02-25 1994-04-05 International Business Machines, Corporation Semiconductor ridge waveguide laser with asymmetrical cladding
JPH07235733A (ja) * 1993-12-27 1995-09-05 Sanyo Electric Co Ltd 半導体レーザ素子
JP3140788B2 (ja) * 1995-12-28 2001-03-05 松下電器産業株式会社 半導体レーザ装置
AU3659297A (en) * 1996-08-21 1998-03-06 W.L. Gore & Associates, Inc. Vertical cavity surface emitting lasers using patterned wafer fusion
JPH11163458A (ja) * 1997-11-26 1999-06-18 Mitsui Chem Inc 半導体レーザ装置
JPH11243259A (ja) * 1997-12-25 1999-09-07 Denso Corp 半導体レーザおよび半導体レーザの駆動方法
JP4387472B2 (ja) * 1998-02-18 2009-12-16 三菱電機株式会社 半導体レーザ
US6546032B1 (en) * 1999-08-27 2003-04-08 Mitsui Chemicals, Inc. Semiconductor laser apparatus

Also Published As

Publication number Publication date
DE60128546T2 (de) 2008-01-31
WO2001057974A1 (en) 2001-08-09
JP2003524890A (ja) 2003-08-19
EP1258062A4 (de) 2006-01-11
US6650671B1 (en) 2003-11-18
EP1258062B1 (de) 2007-05-23
CA2398829A1 (en) 2001-08-09
EP1258062A1 (de) 2002-11-20
ATE363141T1 (de) 2007-06-15

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