DE60045389D1 - Kühlvorrichtung, halbleiterlaser-lichtquellenvorrichtung und halbleiterlaser-lichtquelleneinheit - Google Patents

Kühlvorrichtung, halbleiterlaser-lichtquellenvorrichtung und halbleiterlaser-lichtquelleneinheit

Info

Publication number
DE60045389D1
DE60045389D1 DE60045389T DE60045389T DE60045389D1 DE 60045389 D1 DE60045389 D1 DE 60045389D1 DE 60045389 T DE60045389 T DE 60045389T DE 60045389 T DE60045389 T DE 60045389T DE 60045389 D1 DE60045389 D1 DE 60045389D1
Authority
DE
Germany
Prior art keywords
light source
semiconductor
laser light
semiconductor laser
cooling device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60045389T
Other languages
English (en)
Inventor
Jiro Kitayama
Kyoko Fukumura
Mitsuyasu Matsuo
Toru Sugiyama
Youichi Hisamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE60045389D1 publication Critical patent/DE60045389D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
DE60045389T 2000-10-20 2000-10-20 Kühlvorrichtung, halbleiterlaser-lichtquellenvorrichtung und halbleiterlaser-lichtquelleneinheit Expired - Lifetime DE60045389D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/007331 WO2002035666A1 (en) 2000-10-20 2000-10-20 Cooler, semiconductor laser light source, semiconductor laser light source unit, method for producing semiconductor laser light source unit, and solid laser

Publications (1)

Publication Number Publication Date
DE60045389D1 true DE60045389D1 (de) 2011-01-27

Family

ID=11736607

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60045389T Expired - Lifetime DE60045389D1 (de) 2000-10-20 2000-10-20 Kühlvorrichtung, halbleiterlaser-lichtquellenvorrichtung und halbleiterlaser-lichtquelleneinheit

Country Status (5)

Country Link
US (1) US6970485B1 (de)
EP (1) EP1253685B1 (de)
JP (1) JP3951919B2 (de)
DE (1) DE60045389D1 (de)
WO (1) WO2002035666A1 (de)

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US7017792B2 (en) * 2001-02-02 2006-03-28 Mitsubishi Heavy Industries, Ltd. Integrated piping plate, machining method for same, machining apparatus for same, and machining equipment for same
JP2003008273A (ja) * 2001-06-25 2003-01-10 Fanuc Ltd 冷却装置及び光源装置
JP2005268445A (ja) * 2004-03-17 2005-09-29 Hamamatsu Photonics Kk 半導体レーザ装置
US20060045153A1 (en) * 2004-08-31 2006-03-02 Carter Serrena M Low thermal expansion coefficient cooler for diode-laser bar
US7538275B2 (en) 2005-02-07 2009-05-26 Rockbestos Surprenant Cable Corp. Fire resistant cable
DE602005017741D1 (de) * 2005-03-30 2009-12-31 Tecnisco Ltd Halbleiter-Kühleinrichtung und Halbleiter-Kühleinrichtungsstapel
JP4929612B2 (ja) * 2005-04-12 2012-05-09 ソニー株式会社 半導体レーザ装置及びヒートシンク
CN103236556B (zh) * 2007-03-21 2016-06-08 智能能源有限公司 电化学电池系统及相关方法
US8133629B2 (en) 2007-03-21 2012-03-13 SOCIéTé BIC Fluidic distribution system and related methods
JP2008300596A (ja) * 2007-05-31 2008-12-11 Sony Corp ヒートシンクおよび半導体レーザ装置
DE102009024310A1 (de) 2008-06-05 2010-05-27 Jenoptik Laserdiode Gmbh Vorrichtung mit einer Halbleiterbauelement-Anordnung und einem Kühlelement
JP4557055B2 (ja) * 2008-06-25 2010-10-06 ソニー株式会社 熱輸送デバイス及び電子機器
US9590388B2 (en) 2011-01-11 2017-03-07 Northrop Grumman Systems Corp. Microchannel cooler for a single laser diode emitter based system
JP2013008950A (ja) * 2011-05-23 2013-01-10 Panasonic Corp 光源装置および画像表示装置
GB2495774A (en) * 2011-10-21 2013-04-24 Barco Nv Laser diode grid element comprised of standard laser diodes on a heat exchange plate and PCB
JP5974594B2 (ja) * 2012-04-02 2016-08-23 三菱電機株式会社 冷却器
DE102012107570B4 (de) * 2012-08-17 2017-08-03 Rogers Germany Gmbh Verfahren zur Herstellung von Hohlkörpern, insbesondere von Kühlern, Hohlkörper sowie Kühler enthaltende elektrische oder elektronische Baugruppen
DE112014001497A5 (de) * 2013-03-18 2015-12-10 Mahle International Gmbh Schichtwärmeübertragungseinrichtung und Verfahren zur Herstellung einer Schichtwärmeübertragungseinrichtung
JP2015213109A (ja) * 2014-05-01 2015-11-26 三菱電機株式会社 レーザ光源モジュール
EP3171465B1 (de) * 2014-07-14 2019-09-25 Panasonic Intellectual Property Management Co., Ltd. Gekühlte halbleiterlaservorrichtung
JP6500208B2 (ja) * 2014-07-14 2019-04-17 パナソニックＩｐマネジメント株式会社 半導体レーザモジュール
US20160033209A1 (en) * 2014-07-30 2016-02-04 Geoffrey O. Campbell Reduced thermal expansion microchannel coolers
WO2017059382A1 (en) 2015-09-30 2017-04-06 Microfabrica Inc. Micro heat transfer arrays, micro cold plates, and thermal management systems for cooling semiconductor devices, and methods for using and making such arrays, plates, and systems
JP6431617B2 (ja) * 2015-10-27 2018-11-28 三菱電機株式会社 レーザ光源モジュール
EP3447863B1 (de) 2016-04-19 2021-03-31 Panasonic Intellectual Property Management Co., Ltd. Halbleiterlaservorrichtung und verfahren zur herstellung davon
JP6726769B2 (ja) * 2016-06-20 2020-07-22 テラダイオード， インコーポレーテッド 高出力レーザデバイスのためのパッケージ
US10492343B2 (en) 2016-08-23 2019-11-26 Ford Global Technologies, Llc Vehicle power module assembly with cooling
JP7022901B2 (ja) * 2017-07-07 2022-02-21 パナソニックＩｐマネジメント株式会社 半導体レーザ装置
JP7186345B2 (ja) 2018-05-21 2022-12-09 パナソニックＩｐマネジメント株式会社 半導体レーザ装置
CN112713498A (zh) * 2019-10-25 2021-04-27 山东华光光电子股份有限公司 一种改善激光器smile效应的水冷热沉及封装方法
US20210167575A1 (en) * 2019-12-03 2021-06-03 Panasonic intellectual property Management co., Ltd Assembly techniques and cooling manifold configuration for high-power laser systems
CN110957632B (zh) * 2019-12-11 2021-09-03 北京凯普林光电科技股份有限公司 一种改善半导体激光阵列光谱半宽的微通道热沉
CN112821185B (zh) * 2020-12-31 2022-03-29 中国电子科技集团公司第十三研究所 半导体激光器及半导体激光器侧泵模块

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JPH09102568A (ja) 1995-10-05 1997-04-15 Mitsubishi Electric Corp プレート型ヒートシンク
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JP3417264B2 (ja) * 1997-09-04 2003-06-16 三菱電機株式会社 ヒートシンクの製造方法
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JP3681581B2 (ja) * 1999-07-30 2005-08-10 ファナック株式会社 冷却装置とそれを備えた面発光装置
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CA2400982A1 (en) * 2000-03-10 2001-09-20 Satcon Technology Corporation High performance cold plate for electronic cooling
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Also Published As

Publication number Publication date
EP1253685A4 (de) 2006-09-20
JPWO2002035666A1 (ja) 2004-03-04
EP1253685B1 (de) 2010-12-15
US6970485B1 (en) 2005-11-29
JP3951919B2 (ja) 2007-08-01
WO2002035666A1 (en) 2002-05-02
EP1253685A1 (de) 2002-10-30

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