DE60040392D1 - Filmherstellungsvorrichtung - Google Patents

Filmherstellungsvorrichtung

Info

Publication number
DE60040392D1
DE60040392D1 DE60040392T DE60040392T DE60040392D1 DE 60040392 D1 DE60040392 D1 DE 60040392D1 DE 60040392 T DE60040392 T DE 60040392T DE 60040392 T DE60040392 T DE 60040392T DE 60040392 D1 DE60040392 D1 DE 60040392D1
Authority
DE
Germany
Prior art keywords
production device
film production
film
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60040392T
Other languages
English (en)
Inventor
Kentaro Asakura
Takaya Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE60040392D1 publication Critical patent/DE60040392D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
DE60040392T 1999-12-22 2000-12-22 Filmherstellungsvorrichtung Expired - Fee Related DE60040392D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP36570099A JP4419237B2 (ja) 1999-12-22 1999-12-22 成膜装置及び被処理体の処理方法
PCT/JP2000/009153 WO2001046491A1 (fr) 1999-12-22 2000-12-22 Dispositif filmogene

Publications (1)

Publication Number Publication Date
DE60040392D1 true DE60040392D1 (de) 2008-11-13

Family

ID=18484898

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60040392T Expired - Fee Related DE60040392D1 (de) 1999-12-22 2000-12-22 Filmherstellungsvorrichtung

Country Status (8)

Country Link
US (2) US20020166509A1 (de)
EP (1) EP1199380B1 (de)
JP (1) JP4419237B2 (de)
KR (1) KR100754007B1 (de)
DE (1) DE60040392D1 (de)
SG (1) SG139537A1 (de)
TW (1) TW466578B (de)
WO (1) WO2001046491A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7024105B2 (en) 2003-10-10 2006-04-04 Applied Materials Inc. Substrate heater assembly
US20050176252A1 (en) * 2004-02-10 2005-08-11 Goodman Matthew G. Two-stage load for processing both sides of a wafer
US20060219172A1 (en) * 2005-04-05 2006-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. PVD equipment and electrode and deposition ring thereof
US20080289686A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications
US8999106B2 (en) 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
US9698042B1 (en) * 2016-07-22 2017-07-04 Lam Research Corporation Wafer centering in pocket to improve azimuthal thickness uniformity at wafer edge
JP2021012952A (ja) * 2019-07-05 2021-02-04 東京エレクトロン株式会社 載置台、基板処理装置及び載置台の組立方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5447570A (en) * 1990-04-23 1995-09-05 Genus, Inc. Purge gas in wafer coating area selection
US5273588A (en) * 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
US5803977A (en) * 1992-09-30 1998-09-08 Applied Materials, Inc. Apparatus for full wafer deposition
US5695568A (en) * 1993-04-05 1997-12-09 Applied Materials, Inc. Chemical vapor deposition chamber
TW357404B (en) * 1993-12-24 1999-05-01 Tokyo Electron Ltd Apparatus and method for processing of plasma
JPH07201829A (ja) * 1993-12-28 1995-08-04 Tokyo Electron Ltd プラズマ処理装置の洗浄方法
US5968379A (en) * 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
US5635244A (en) * 1995-08-28 1997-06-03 Lsi Logic Corporation Method of forming a layer of material on a wafer
US5891348A (en) * 1996-01-26 1999-04-06 Applied Materials, Inc. Process gas focusing apparatus and method
US5846332A (en) * 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
WO1998014636A1 (en) * 1996-09-30 1998-04-09 Lam Research Corporation Apparatus for reducing polymer deposition on substrate support
JP3476638B2 (ja) * 1996-12-20 2003-12-10 東京エレクトロン株式会社 Ｃｖｄ成膜方法
US6051286A (en) * 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
US5942042A (en) * 1997-05-23 1999-08-24 Applied Materials, Inc. Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
WO2000026939A1 (en) * 1998-10-29 2000-05-11 Applied Materials, Inc. Apparatus for coupling power through a workpiece in a semiconductor wafer processing system
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6451181B1 (en) * 1999-03-02 2002-09-17 Motorola, Inc. Method of forming a semiconductor device barrier layer
US6162336A (en) * 1999-07-12 2000-12-19 Chartered Semiconductor Manufacturing Ltd. Clamping ring design to reduce wafer sticking problem in metal deposition
US6375748B1 (en) * 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition

Also Published As

Publication number Publication date
US20020166509A1 (en) 2002-11-14
JP2001181845A (ja) 2001-07-03
KR100754007B1 (ko) 2007-09-03
EP1199380A4 (de) 2005-01-19
US20040168642A1 (en) 2004-09-02
TW466578B (en) 2001-12-01
EP1199380A1 (de) 2002-04-24
WO2001046491A1 (fr) 2001-06-28
KR20010102302A (ko) 2001-11-15
JP4419237B2 (ja) 2010-02-24
SG139537A1 (en) 2008-02-29
EP1199380B1 (de) 2008-10-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee