SG139537A1 - Film deposition system - Google Patents

Film deposition system

Info

Publication number
SG139537A1
SG139537A1 SG200402185-3A SG2004021853A SG139537A1 SG 139537 A1 SG139537 A1 SG 139537A1 SG 2004021853 A SG2004021853 A SG 2004021853A SG 139537 A1 SG139537 A1 SG 139537A1
Authority
SG
Singapore
Prior art keywords
stage
processed
film deposition
deposition system
processing vessel
Prior art date
Application number
SG200402185-3A
Other languages
English (en)
Inventor
Kentaro Asakura
Shimizu Takaya
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG139537A1 publication Critical patent/SG139537A1/en

Links

Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
SG200402185-3A 1999-12-22 2000-12-22 Film deposition system SG139537A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36570099A JP4419237B2 (ja) 1999-12-22 1999-12-22 成膜装置及び被処理体の処理方法

Publications (1)

Publication Number Publication Date
SG139537A1 true SG139537A1 (en) 2008-02-29

Family

ID=18484898

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200402185-3A SG139537A1 (en) 1999-12-22 2000-12-22 Film deposition system

Country Status (8)

Country Link
US (2) US20020166509A1 (de)
EP (1) EP1199380B1 (de)
JP (1) JP4419237B2 (de)
KR (1) KR100754007B1 (de)
DE (1) DE60040392D1 (de)
SG (1) SG139537A1 (de)
TW (1) TW466578B (de)
WO (1) WO2001046491A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7024105B2 (en) 2003-10-10 2006-04-04 Applied Materials Inc. Substrate heater assembly
US20050176252A1 (en) * 2004-02-10 2005-08-11 Goodman Matthew G. Two-stage load for processing both sides of a wafer
US20060219172A1 (en) * 2005-04-05 2006-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. PVD equipment and electrode and deposition ring thereof
US20080289686A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications
US8999106B2 (en) 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
US9698042B1 (en) * 2016-07-22 2017-07-04 Lam Research Corporation Wafer centering in pocket to improve azimuthal thickness uniformity at wafer edge
JP2021012952A (ja) * 2019-07-05 2021-02-04 東京エレクトロン株式会社 載置台、基板処理装置及び載置台の組立方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578164A (en) * 1993-12-24 1996-11-26 Tokyo Electron Limited Plasma processing apparatus and method
US5635244A (en) * 1995-08-28 1997-06-03 Lsi Logic Corporation Method of forming a layer of material on a wafer
EP0786804A2 (de) * 1996-01-26 1997-07-30 Applied Materials, Inc. Vorrichtung und Verfahren zum Behandeln von Substraten
WO1998014636A1 (en) * 1996-09-30 1998-04-09 Lam Research Corporation Apparatus for reducing polymer deposition on substrate support
US5963834A (en) * 1996-12-20 1999-10-05 Tokyo Electron Limited Method for forming a CVD film
US5968379A (en) * 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
EP1033745A2 (de) * 1999-03-02 2000-09-06 Motorola, Inc. Herstellungsverfahren von Barriereschicht für Kupfer-Verbindungsstruktur
US6162336A (en) * 1999-07-12 2000-12-19 Chartered Semiconductor Manufacturing Ltd. Clamping ring design to reduce wafer sticking problem in metal deposition

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5447570A (en) * 1990-04-23 1995-09-05 Genus, Inc. Purge gas in wafer coating area selection
US5273588A (en) * 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
US5803977A (en) * 1992-09-30 1998-09-08 Applied Materials, Inc. Apparatus for full wafer deposition
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
JPH07201829A (ja) * 1993-12-28 1995-08-04 Tokyo Electron Ltd プラズマ処理装置の洗浄方法
US5846332A (en) * 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US6051286A (en) * 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
US5942042A (en) * 1997-05-23 1999-08-24 Applied Materials, Inc. Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
JP2002529594A (ja) * 1998-10-29 2002-09-10 アプライド マテリアルズ インコーポレイテッド 半導体ウエハ処理システムにおいて加工物を貫通して電力を結合する装置
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6375748B1 (en) * 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578164A (en) * 1993-12-24 1996-11-26 Tokyo Electron Limited Plasma processing apparatus and method
US5968379A (en) * 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
US5635244A (en) * 1995-08-28 1997-06-03 Lsi Logic Corporation Method of forming a layer of material on a wafer
EP0786804A2 (de) * 1996-01-26 1997-07-30 Applied Materials, Inc. Vorrichtung und Verfahren zum Behandeln von Substraten
WO1998014636A1 (en) * 1996-09-30 1998-04-09 Lam Research Corporation Apparatus for reducing polymer deposition on substrate support
US5963834A (en) * 1996-12-20 1999-10-05 Tokyo Electron Limited Method for forming a CVD film
EP1033745A2 (de) * 1999-03-02 2000-09-06 Motorola, Inc. Herstellungsverfahren von Barriereschicht für Kupfer-Verbindungsstruktur
US6162336A (en) * 1999-07-12 2000-12-19 Chartered Semiconductor Manufacturing Ltd. Clamping ring design to reduce wafer sticking problem in metal deposition

Also Published As

Publication number Publication date
US20040168642A1 (en) 2004-09-02
DE60040392D1 (de) 2008-11-13
JP4419237B2 (ja) 2010-02-24
EP1199380A1 (de) 2002-04-24
KR100754007B1 (ko) 2007-09-03
KR20010102302A (ko) 2001-11-15
EP1199380B1 (de) 2008-10-01
JP2001181845A (ja) 2001-07-03
WO2001046491A1 (fr) 2001-06-28
EP1199380A4 (de) 2005-01-19
US20020166509A1 (en) 2002-11-14
TW466578B (en) 2001-12-01

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