DE60037650D1 - Multichipmodul für hochleistungsanwendungen - Google Patents

Multichipmodul für hochleistungsanwendungen

Info

Publication number
DE60037650D1
DE60037650D1 DE60037650T DE60037650T DE60037650D1 DE 60037650 D1 DE60037650 D1 DE 60037650D1 DE 60037650 T DE60037650 T DE 60037650T DE 60037650 T DE60037650 T DE 60037650T DE 60037650 D1 DE60037650 D1 DE 60037650D1
Authority
DE
Germany
Prior art keywords
high performance
multichip module
performance applications
applications
multichip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60037650T
Other languages
English (en)
Other versions
DE60037650T2 (de
Inventor
Naveed Majid
Ton Mobers
Satyen Mukherjee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seong Capital Ltd Us LLC
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Publication of DE60037650D1 publication Critical patent/DE60037650D1/de
Application granted granted Critical
Publication of DE60037650T2 publication Critical patent/DE60037650T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE60037650T 1999-11-15 2000-10-26 Multichipmodul für hochleistungsanwendungen Expired - Lifetime DE60037650T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/440,595 US6798061B2 (en) 1999-11-15 1999-11-15 Multiple semiconductor chip (multi-chip) module for use in power applications
US440595 1999-11-15
PCT/EP2000/010608 WO2001037336A1 (en) 1999-11-15 2000-10-26 Multi-chip module for use in high-power applications

Publications (2)

Publication Number Publication Date
DE60037650D1 true DE60037650D1 (de) 2008-02-14
DE60037650T2 DE60037650T2 (de) 2009-01-08

Family

ID=23749396

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60037650T Expired - Lifetime DE60037650T2 (de) 1999-11-15 2000-10-26 Multichipmodul für hochleistungsanwendungen

Country Status (7)

Country Link
US (1) US6798061B2 (de)
EP (1) EP1149419B1 (de)
JP (1) JP2003514395A (de)
KR (1) KR100771262B1 (de)
DE (1) DE60037650T2 (de)
TW (1) TW478021B (de)
WO (1) WO2001037336A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7656682B1 (en) * 2000-11-21 2010-02-02 Intel Corporation Electromagnetic noise reduction device
US6649978B2 (en) * 2001-06-19 2003-11-18 Koninklijke Philips Electronics N.V. Semiconductor module having multiple semiconductor chips
DE10149774A1 (de) 2001-10-09 2003-04-24 Bosch Gmbh Robert Verfahren zum Verpacken von elektronischen Baugruppen und Mehrfachchipverpackung
KR100575591B1 (ko) * 2004-07-27 2006-05-03 삼성전자주식회사 웨이퍼 레벨 적층 패키지용 칩 스케일 패키지 및 그 제조 방법
US7291869B2 (en) * 2006-02-06 2007-11-06 Infieon Technologies A.G. Electronic module with stacked semiconductors
JP5157247B2 (ja) * 2006-10-30 2013-03-06 三菱電機株式会社 電力半導体装置
JP4694539B2 (ja) * 2007-07-31 2011-06-08 シャープ株式会社 出力制御装置、ならびに、これを用いたａｃ／ｄｃ電源装置、回路装置、ｌｅｄバックライト回路装置及びスイッチング型ｄｃ／ｄｃコンバータ装置
US10371578B2 (en) * 2015-04-14 2019-08-06 Maxim Integrated Products, Inc. Thermal management of thermal sensor in a mobile device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4314270A (en) * 1977-12-02 1982-02-02 Mitsubishi Denki Kabushiki Kaisha Hybrid thick film integrated circuit heat dissipating and grounding assembly
EP0219627B1 (de) 1985-09-24 1991-06-05 Oerlikon-Contraves AG Mehrschichtige gedruckte Schaltungsplatte
DE3786314D1 (de) * 1986-09-23 1993-07-29 Siemens Ag Halbleiterbauelemente mit leistungs-mosfet und steuerschaltung.
JPH04233258A (ja) 1990-07-23 1992-08-21 Internatl Business Mach Corp <Ibm> 超小型電子回路パッケージ
JPH0750766B2 (ja) 1993-07-28 1995-05-31 富士電機株式会社 半導体装置
US6028348A (en) * 1993-11-30 2000-02-22 Texas Instruments Incorporated Low thermal impedance integrated circuit
US5489792A (en) * 1994-04-07 1996-02-06 Regents Of The University Of California Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
JPH07335811A (ja) 1994-06-10 1995-12-22 Nippondenso Co Ltd 半導体装置
JP3575908B2 (ja) * 1996-03-28 2004-10-13 株式会社東芝 半導体装置
US6140690A (en) * 1996-11-18 2000-10-31 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US6060748A (en) * 1996-12-26 2000-05-09 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device using a silicon-on-insulator substrate
JP3426101B2 (ja) * 1997-02-25 2003-07-14 三菱電機株式会社 整流装置
US5998868A (en) * 1998-02-04 1999-12-07 International Business Machines Corporation Very dense chip package
US6150724A (en) * 1998-03-02 2000-11-21 Motorola, Inc. Multi-chip semiconductor device and method for making the device by using multiple flip chip interfaces
US6255710B1 (en) * 1998-05-04 2001-07-03 Motorola, Inc. 3-D smart power IC

Also Published As

Publication number Publication date
KR20010110341A (ko) 2001-12-13
WO2001037336A1 (en) 2001-05-25
JP2003514395A (ja) 2003-04-15
EP1149419A1 (de) 2001-10-31
KR100771262B1 (ko) 2007-10-29
EP1149419B1 (de) 2008-01-02
TW478021B (en) 2002-03-01
DE60037650T2 (de) 2009-01-08
US20020079566A1 (en) 2002-06-27
US6798061B2 (en) 2004-09-28

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