DE60036166D1 - Gerät zur Bearbeitung eines Halbleiterwerkstückes - Google Patents

Gerät zur Bearbeitung eines Halbleiterwerkstückes

Info

Publication number
DE60036166D1
DE60036166D1 DE60036166T DE60036166T DE60036166D1 DE 60036166 D1 DE60036166 D1 DE 60036166D1 DE 60036166 T DE60036166 T DE 60036166T DE 60036166 T DE60036166 T DE 60036166T DE 60036166 D1 DE60036166 D1 DE 60036166D1
Authority
DE
Germany
Prior art keywords
processing
semiconductor workpiece
workpiece
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60036166T
Other languages
English (en)
Other versions
DE60036166T2 (de
Inventor
Naohiro Shoda
Peter Weigand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Toshiba Corp
Original Assignee
Siemens AG
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Toshiba Corp filed Critical Siemens AG
Application granted granted Critical
Publication of DE60036166D1 publication Critical patent/DE60036166D1/de
Publication of DE60036166T2 publication Critical patent/DE60036166T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
DE60036166T 1999-07-27 2000-07-27 Gerät zur Bearbeitung eines Halbleiterwerkstückes Expired - Fee Related DE60036166T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US361304 1982-03-24
US09/361,304 US6406545B2 (en) 1999-07-27 1999-07-27 Semiconductor workpiece processing apparatus and method

Publications (2)

Publication Number Publication Date
DE60036166D1 true DE60036166D1 (de) 2007-10-11
DE60036166T2 DE60036166T2 (de) 2008-05-21

Family

ID=23421499

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60036166T Expired - Fee Related DE60036166T2 (de) 1999-07-27 2000-07-27 Gerät zur Bearbeitung eines Halbleiterwerkstückes

Country Status (8)

Country Link
US (1) US6406545B2 (de)
EP (1) EP1073096B1 (de)
JP (1) JP2001077040A (de)
KR (1) KR100346587B1 (de)
CN (1) CN1192416C (de)
DE (1) DE60036166T2 (de)
HK (1) HK1033502A1 (de)
TW (1) TW465000B (de)

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US6705394B1 (en) * 1999-10-29 2004-03-16 Cvc Products, Inc. Rapid cycle chuck for low-pressure processing
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DE10059386A1 (de) * 2000-11-30 2002-06-13 Aixtron Ag Verfahren und Vorrichtung zur dosierten Abgabe kleiner Flüssigkeitsvolumenströme
US7871676B2 (en) * 2000-12-06 2011-01-18 Novellus Systems, Inc. System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
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US20020144786A1 (en) * 2001-04-05 2002-10-10 Angstron Systems, Inc. Substrate temperature control in an ALD reactor
US7033514B2 (en) * 2001-08-27 2006-04-25 Micron Technology, Inc. Method and apparatus for micromachining using a magnetic field and plasma etching
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US7186364B2 (en) * 2002-01-28 2007-03-06 Depuy Products, Inc. Composite prosthetic bearing constructed of polyethylene and an ethylene-acrylate copolymer and method for making the same
US6913670B2 (en) * 2002-04-08 2005-07-05 Applied Materials, Inc. Substrate support having barrier capable of detecting fluid leakage
US6837965B2 (en) * 2002-08-14 2005-01-04 Aaron D. Gustafson Method and apparatus for etch processing with end point detection thereof
WO2004057650A1 (en) 2002-12-20 2004-07-08 Mattson Technology Canada, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece
JP4186644B2 (ja) 2003-02-17 2008-11-26 株式会社Ｉｈｉ 真空処理装置の冷却装置
US7871490B2 (en) * 2003-03-18 2011-01-18 Top Engineering Co., Ltd. Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes and improved field distribution
US20040182319A1 (en) * 2003-03-18 2004-09-23 Harqkyun Kim Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
US20050037620A1 (en) * 2003-08-15 2005-02-17 Berman Michael J. Method for achieving wafer contact for electro-processing
JP5630935B2 (ja) * 2003-12-19 2014-11-26 マトソン テクノロジー、インコーポレイテッド 工作物の熱誘起運動を抑制する機器及び装置
JP4523352B2 (ja) * 2004-07-20 2010-08-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7202562B2 (en) * 2004-12-02 2007-04-10 Micron Technology, Inc. Integrated circuit cooling system and method
KR100718276B1 (ko) * 2006-08-01 2007-05-15 세메스 주식회사 기판 에싱 방법
US7501605B2 (en) * 2006-08-29 2009-03-10 Lam Research Corporation Method of tuning thermal conductivity of electrostatic chuck support assembly
US7723648B2 (en) * 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
US7838800B2 (en) * 2006-09-25 2010-11-23 Tokyo Electron Limited Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system
WO2008058397A1 (en) 2006-11-15 2008-05-22 Mattson Technology Canada, Inc. Systems and methods for supporting a workpiece during heat-treating
US20080203081A1 (en) * 2006-12-01 2008-08-28 Honeywell International Inc. Variable thermal resistor system
DE102007026348A1 (de) * 2007-06-06 2008-12-11 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
KR101610269B1 (ko) * 2008-05-16 2016-04-07 맷슨 테크놀로지, 인크. 워크피스 파손 방지 방법 및 장치
JP5478280B2 (ja) * 2010-01-27 2014-04-23 東京エレクトロン株式会社 基板加熱装置および基板加熱方法、ならびに基板処理システム
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
TWI659674B (zh) * 2011-10-05 2019-05-11 應用材料股份有限公司 電漿處理設備及蓋組件
US9196334B2 (en) 2012-04-19 2015-11-24 Qualcomm Incorporated Hierarchical memory magnetoresistive random-access memory (MRAM) architecture
US9976215B2 (en) * 2012-05-01 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film formation apparatus and process
WO2014005780A1 (en) 2012-07-06 2014-01-09 Asml Netherlands B.V. A lithographic apparatus
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
CN103074612A (zh) * 2012-12-29 2013-05-01 光达光电设备科技（嘉兴）有限公司 加热装置及化学气相沉积设备
US9368232B2 (en) 2013-03-07 2016-06-14 Qualcomm Incorporated Magnetic automatic test equipment (ATE) memory tester device and method employing temperature control
US10692765B2 (en) * 2014-11-07 2020-06-23 Applied Materials, Inc. Transfer arm for film frame substrate handling during plasma singulation of wafers
CN104485303A (zh) * 2015-01-04 2015-04-01 合肥京东方光电科技有限公司 一种吸附装置及其工作方法
CN107331595B (zh) * 2016-04-29 2019-08-13 中微半导体设备(上海)股份有限公司 用于等离子处理装置及其温度控制方法和校准方法
JP6643197B2 (ja) * 2016-07-13 2020-02-12 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
CN110828311B (zh) * 2018-08-08 2024-04-16 北京北方华创微电子装备有限公司 晶片处理方法、辅助控制器和晶片处理系统
KR20220092575A (ko) * 2019-11-01 2022-07-01 어플라이드 머티어리얼스, 인코포레이티드 감소된 결함의 증착 프로세스들
KR20230054155A (ko) * 2021-10-15 2023-04-24 광운대학교 산학협력단 극저온 정전척 시스템 및 이의 제어 방법

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JP2651597B2 (ja) * 1988-06-27 1997-09-10 富士通株式会社 ドライエッチング方法及び装置
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DE4013929C2 (de) 1989-05-02 1995-12-07 Toshiba Kawasaki Kk Verfahren zum Einbringen von Störstoffen in eine Halbleitermaterial-Schicht beim Herstellen eines Halbleiterbauelements und Anwendung des Verfahrens
JP2638649B2 (ja) * 1989-12-22 1997-08-06 東京エレクトロン株式会社 静電チャック
JP3131436B2 (ja) 1990-02-26 2001-01-31 株式会社東芝 半導体装置の製造方法
US4971653A (en) 1990-03-14 1990-11-20 Matrix Integrated Systems Temperature controlled chuck for elevated temperature etch processing
JPH04196528A (ja) 1990-11-28 1992-07-16 Toshiba Corp マグネトロンエッチング装置
US5213349A (en) 1991-12-18 1993-05-25 Elliott Joe C Electrostatic chuck
JPH06158361A (ja) 1992-11-20 1994-06-07 Hitachi Ltd プラズマ処理装置
US5567267A (en) 1992-11-20 1996-10-22 Tokyo Electron Limited Method of controlling temperature of susceptor
KR100238629B1 (ko) 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
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Also Published As

Publication number Publication date
EP1073096A1 (de) 2001-01-31
HK1033502A1 (en) 2001-08-31
KR20010030010A (ko) 2001-04-16
JP2001077040A (ja) 2001-03-23
DE60036166T2 (de) 2008-05-21
TW465000B (en) 2001-11-21
EP1073096B1 (de) 2007-08-29
US20010008172A1 (en) 2001-07-19
US6406545B2 (en) 2002-06-18
KR100346587B1 (ko) 2002-08-03
CN1192416C (zh) 2005-03-09
CN1282099A (zh) 2001-01-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee