DE60035642D1 - Verfahren zur Herstellung von bipolaren Bauelementen mit selbstausrichtetem Basis-Emitter Übergang - Google Patents

Verfahren zur Herstellung von bipolaren Bauelementen mit selbstausrichtetem Basis-Emitter Übergang

Info

Publication number
DE60035642D1
DE60035642D1 DE60035642T DE60035642T DE60035642D1 DE 60035642 D1 DE60035642 D1 DE 60035642D1 DE 60035642 T DE60035642 T DE 60035642T DE 60035642 T DE60035642 T DE 60035642T DE 60035642 D1 DE60035642 D1 DE 60035642D1
Authority
DE
Germany
Prior art keywords
self
emitter junction
bipolar devices
aligned base
making bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60035642T
Other languages
English (en)
Inventor
Yvon Gris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE60035642D1 publication Critical patent/DE60035642D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE60035642T 1999-05-31 2000-05-30 Verfahren zur Herstellung von bipolaren Bauelementen mit selbstausrichtetem Basis-Emitter Übergang Expired - Lifetime DE60035642D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9907023A FR2794285B1 (fr) 1999-05-31 1999-05-31 Procede de fabrication de dispositifs bipolaires a jonction base-emetteur autoalignee

Publications (1)

Publication Number Publication Date
DE60035642D1 true DE60035642D1 (de) 2007-09-06

Family

ID=9546339

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60035642T Expired - Lifetime DE60035642D1 (de) 1999-05-31 2000-05-30 Verfahren zur Herstellung von bipolaren Bauelementen mit selbstausrichtetem Basis-Emitter Übergang

Country Status (5)

Country Link
US (1) US6352907B1 (de)
EP (1) EP1058302B1 (de)
JP (1) JP3324597B2 (de)
DE (1) DE60035642D1 (de)
FR (1) FR2794285B1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016074A (ja) * 2000-06-27 2002-01-18 Sony Corp 半導体装置およびその製造方法
US6674102B2 (en) * 2001-01-25 2004-01-06 International Business Machines Corporation Sti pull-down to control SiGe facet growth
US6784065B1 (en) 2001-06-15 2004-08-31 National Semiconductor Corporation Bipolar transistor with ultra small self-aligned polysilicon emitter and method of forming the transistor
US7087979B1 (en) 2001-06-15 2006-08-08 National Semiconductor Corporation Bipolar transistor with an ultra small self-aligned polysilicon emitter
US6649482B1 (en) * 2001-06-15 2003-11-18 National Semiconductor Corporation Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor
US6579771B1 (en) 2001-12-10 2003-06-17 Intel Corporation Self aligned compact bipolar junction transistor layout, and method of making same
JP2005268261A (ja) * 2004-03-16 2005-09-29 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US8735289B2 (en) * 2010-11-29 2014-05-27 Infineon Technologies Ag Method of contacting a doping region in a semiconductor substrate
CN108054095B (zh) * 2017-12-21 2020-08-28 南京溧水高新创业投资管理有限公司 双极晶体管的制作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132765A (en) 1989-09-11 1992-07-21 Blouse Jeffrey L Narrow base transistor and method of fabricating same
US5008207A (en) 1989-09-11 1991-04-16 International Business Machines Corporation Method of fabricating a narrow base transistor
US5137840A (en) * 1990-10-24 1992-08-11 International Business Machines Corporation Vertical bipolar transistor with recessed epitaxially grown intrinsic base region
US5488003A (en) * 1993-03-31 1996-01-30 Intel Corporation Method of making emitter trench BiCMOS using integrated dual layer emitter mask
EP0626769B1 (de) * 1993-05-26 2000-02-02 Nec Corporation Netzwerksynchronisierung für zellulare TDMA Kommunikation unter Verwendung von Signalen von Mobilstationen in benachbarten Zellen
US5541121A (en) * 1995-01-30 1996-07-30 Texas Instruments Incorporated Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer
KR100257517B1 (ko) * 1997-07-01 2000-06-01 윤종용 고속 바이폴라 트랜지스터 및 그 제조방법

Also Published As

Publication number Publication date
FR2794285B1 (fr) 2001-08-10
JP2001023998A (ja) 2001-01-26
FR2794285A1 (fr) 2000-12-01
EP1058302B1 (de) 2007-07-25
US6352907B1 (en) 2002-03-05
EP1058302A1 (de) 2000-12-06
JP3324597B2 (ja) 2002-09-17

Similar Documents

Publication Publication Date Title
DE69909205D1 (de) Verfahren zur Herstellung vertikaler Transistoren
DE69717356T2 (de) Verfahren zur Herstellung von Heteroübergang-Bipolartransistoren mit hoher Verstärkung
DE59710005D1 (de) Verfahren zur Herstellung eines Heterobipolartransistors
DE60028912D1 (de) Verfahren zur Herstellung von Hableitervorrichtungen
DE69704014T2 (de) Verfahren zur Herstellung von konjugierter Linolsäure
DE69715802D1 (de) Quantentopf-mos-transistor und verfahren zur herstellung
DE69841854D1 (de) Verfahren zur Herstellung eines Wertbeständigen Bipolartransistors mit elektrisch isolierenden Elementen
DE60000364T2 (de) Verfahren zur herstellung von 5-cyanophthalid
DE69942333D1 (de) Lateraler bipolartransistor mit cmos und verfahren zur herstellung
DE60009433D1 (de) Verfahren zur Herstellung von Olefinpolymeren mit langkettigen Verzweigungen
DE69838770D1 (de) Verfahren zur Herstellung elektrolumineszierender Vorrichtungen
DE69734871D1 (de) Verfahren zur Herstellung eines Germanium-implantierten bipolaren Heteroübergangtransistors
DE69524516T2 (de) Verfahren zur Herstellung eines Bipolatransistors
DE69719711D1 (de) Verfahren zur Herstellung eines Bipolartransistors mit dielektrischer Isolation
DE60035642D1 (de) Verfahren zur Herstellung von bipolaren Bauelementen mit selbstausrichtetem Basis-Emitter Übergang
DE69427913D1 (de) Bipolarer Hochfrequenztransistor und Verfahren zur Herstellung
DE69934332D1 (de) Verfahren zur herstellung von polyolefinen
DE60019898D1 (de) Mikrobielles verfahren zur herstellung von pravastatin
DE60030059D1 (de) Durchbruchsdiode und verfahren zur herstellung
ATE364042T1 (de) Verfahren zur herstellung von thiamethoxam
DE60001015D1 (de) Verfahren zur Herstellung von Canthaxanthin
DE60228916D1 (de) Heteroübergang-Bipolartransistor und Verfahren zur Herstellung
DE69922488D1 (de) Butadienpolymere und verfahren zur herstellung konjugierter dienpolymere
DE69629974D1 (de) Verfahren zur Herstellung einer integrierten Schaltung mit komplementären Bipolartransistoren
DE60043610D1 (de) Verfahren zur herstellung von l-lysin

Legal Events

Date Code Title Description
8332 No legal effect for de