DE60034730D1 - Suspension zum Polieren und Polierverfahren - Google Patents

Suspension zum Polieren und Polierverfahren

Info

Publication number
DE60034730D1
DE60034730D1 DE60034730T DE60034730T DE60034730D1 DE 60034730 D1 DE60034730 D1 DE 60034730D1 DE 60034730 T DE60034730 T DE 60034730T DE 60034730 T DE60034730 T DE 60034730T DE 60034730 D1 DE60034730 D1 DE 60034730D1
Authority
DE
Germany
Prior art keywords
polishing
suspension
polishing process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60034730T
Other languages
English (en)
Other versions
DE60034730T2 (de
Inventor
Hiroshi Kato
Naoto Mochizuki
Hiroyuki Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuyama Corp
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of DE60034730D1 publication Critical patent/DE60034730D1/de
Application granted granted Critical
Publication of DE60034730T2 publication Critical patent/DE60034730T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE60034730T 1999-03-31 2000-03-29 Suspension zum Polieren und Polierverfahren Expired - Lifetime DE60034730T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9307099 1999-03-31
JP9307099 1999-03-31

Publications (2)

Publication Number Publication Date
DE60034730D1 true DE60034730D1 (de) 2007-06-21
DE60034730T2 DE60034730T2 (de) 2008-01-17

Family

ID=14072267

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60034730T Expired - Lifetime DE60034730T2 (de) 1999-03-31 2000-03-29 Suspension zum Polieren und Polierverfahren

Country Status (5)

Country Link
US (1) US6340374B1 (de)
EP (1) EP1041129B1 (de)
KR (1) KR100574259B1 (de)
DE (1) DE60034730T2 (de)
TW (1) TW460963B (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3721497B2 (ja) * 1999-07-15 2005-11-30 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
KR100803876B1 (ko) * 2000-05-12 2008-02-14 닛산 가가쿠 고교 가부시키 가이샤 연마용 조성물
KR100341141B1 (ko) * 2000-07-26 2002-06-20 이종학 반도체 ｃｍｐ 공정의 산화막 연마용 슬러리 및 이의제조방법
US6551935B1 (en) * 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
CA2467806C (en) 2001-11-20 2011-04-19 Rensselaer Polytechnic Institute Method for polishing a substrate surface
KR100499403B1 (ko) * 2002-03-06 2005-07-07 주식회사 하이닉스반도체 슬러리 제조 방법
US6955914B2 (en) * 2002-04-10 2005-10-18 Geneohm Sciences, Inc. Method for making a molecularly smooth surface
TWI307712B (en) * 2002-08-28 2009-03-21 Kao Corp Polishing composition
JP4608856B2 (ja) * 2003-07-24 2011-01-12 信越半導体株式会社 ウエーハの研磨方法
US20050070109A1 (en) * 2003-09-30 2005-03-31 Feller A. Daniel Novel slurry for chemical mechanical polishing of metals
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
US20050189322A1 (en) * 2004-02-27 2005-09-01 Lane Sarah J. Compositions and methods for chemical mechanical polishing silica and silicon nitride
GB0407198D0 (en) * 2004-03-30 2004-05-05 British Telecomm Joint fault detection
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US6979252B1 (en) 2004-08-10 2005-12-27 Dupont Air Products Nanomaterials Llc Low defectivity product slurry for CMP and associated production method
JP2008523638A (ja) * 2004-12-13 2008-07-03 プラナー ソリューションズ エルエルシー コロイド状シリカをベースとする化学機械研磨用スラリー
JP5319887B2 (ja) * 2005-01-05 2013-10-16 ニッタ・ハース株式会社 研磨用スラリー
US20060205218A1 (en) * 2005-03-09 2006-09-14 Mueller Brian L Compositions and methods for chemical mechanical polishing thin films and dielectric materials
JP4154399B2 (ja) * 2005-03-29 2008-09-24 日本航空電子工業株式会社 接点部材、コネクタ、及び接点部材の表面改質方法
KR20080059266A (ko) 2005-09-26 2008-06-26 플레이너 솔루션즈 엘엘씨 화학적 기계적 연마 용도로 사용되기 위한 초고순도의콜로이드 실리카
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
GB2454343B (en) * 2007-10-29 2012-07-11 Kao Corp Polishing composition for hard disk substrate
JP6156207B2 (ja) * 2013-04-02 2017-07-05 信越化学工業株式会社 合成石英ガラス基板の製造方法
US9593272B2 (en) * 2013-07-24 2017-03-14 Tokuyama Corporation Silica for CMP, aqueous dispersion, and process for producing silica for CMP
JP6506913B2 (ja) 2014-03-31 2019-04-24 ニッタ・ハース株式会社 研磨用組成物及び研磨方法
US9551075B2 (en) 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
DE102015206433A1 (de) * 2015-04-10 2016-10-13 Evonik Degussa Gmbh Verfahren zur Herstellung eines Wärmedämmformkörpers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588421A (en) 1984-10-15 1986-05-13 Nalco Chemical Company Aqueous silica compositions for polishing silicon wafers
US5264010A (en) 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
EP0773270B1 (de) 1995-11-10 2001-01-24 Tokuyama Corporation Poliersuspensionen und Verfahren zu ihrer Herstellung
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
SG54606A1 (en) * 1996-12-05 1998-11-16 Fujimi Inc Polishing composition
JP3359535B2 (ja) 1997-04-25 2002-12-24 三井金属鉱業株式会社 半導体装置の製造方法
JP4113282B2 (ja) 1998-05-07 2008-07-09 スピードファム株式会社 研磨組成物及びそれを用いたエッジポリッシング方法
US6132298A (en) * 1998-11-25 2000-10-17 Applied Materials, Inc. Carrier head with edge control for chemical mechanical polishing

Also Published As

Publication number Publication date
EP1041129B1 (de) 2007-05-09
KR100574259B1 (ko) 2006-04-27
US6340374B1 (en) 2002-01-22
KR20010014524A (ko) 2001-02-26
EP1041129A1 (de) 2000-10-04
DE60034730T2 (de) 2008-01-17
TW460963B (en) 2001-10-21

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