DE60012896D1 - Kapazitiver hochspannungsteiler mit hochspannungs soi-kondensator - Google Patents
Kapazitiver hochspannungsteiler mit hochspannungs soi-kondensatorInfo
- Publication number
- DE60012896D1 DE60012896D1 DE60012896T DE60012896T DE60012896D1 DE 60012896 D1 DE60012896 D1 DE 60012896D1 DE 60012896 T DE60012896 T DE 60012896T DE 60012896 T DE60012896 T DE 60012896T DE 60012896 D1 DE60012896 D1 DE 60012896D1
- Authority
- DE
- Germany
- Prior art keywords
- high voltage
- capacitive
- voltage divider
- soi capacitor
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/12—Shaping pulses by steepening leading or trailing edges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/04—Voltage dividers
- G01R15/06—Voltage dividers having reactive components, e.g. capacitive transformer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/473,530 US6518814B1 (en) | 1999-12-28 | 1999-12-28 | High-voltage capacitor voltage divider circuit having a high-voltage silicon-on-insulation (SOI) capacitor |
US473530 | 1999-12-28 | ||
PCT/EP2000/012538 WO2001048824A1 (en) | 1999-12-28 | 2000-12-11 | High-voltage capacitor voltage divider circuit having a high-voltage silicon-on-insulator (soi) capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60012896D1 true DE60012896D1 (de) | 2004-09-16 |
DE60012896T2 DE60012896T2 (de) | 2005-07-28 |
Family
ID=23879915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60012896T Expired - Fee Related DE60012896T2 (de) | 1999-12-28 | 2000-12-11 | Kapazitiver hochspannungsteiler mit hochspannungs soi-kondensator |
Country Status (6)
Country | Link |
---|---|
US (1) | US6518814B1 (de) |
EP (1) | EP1159759B1 (de) |
JP (1) | JP2003518774A (de) |
KR (1) | KR20010102412A (de) |
DE (1) | DE60012896T2 (de) |
WO (1) | WO2001048824A1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI278987B (en) * | 2001-12-04 | 2007-04-11 | Em Microelectronic Marin Sa | Complementary electronic system for lowering electric power consumption |
JP2005038882A (ja) * | 2003-07-15 | 2005-02-10 | Sanyo Electric Co Ltd | 半導体装置、及び分圧回路 |
JP2005038883A (ja) * | 2003-07-15 | 2005-02-10 | Sanyo Electric Co Ltd | 半導体装置、及び分圧回路 |
JP2005038881A (ja) * | 2003-07-15 | 2005-02-10 | Sanyo Electric Co Ltd | 半導体装置、及び分圧回路 |
US7307467B2 (en) * | 2006-04-28 | 2007-12-11 | International Business Machines Corporation | Structure and method for implementing oxide leakage based voltage divider network for integrated circuit devices |
US7061308B2 (en) * | 2003-10-01 | 2006-06-13 | International Business Machines Corporation | Voltage divider for integrated circuits |
WO2006052233A1 (en) * | 2004-11-04 | 2006-05-18 | International Business Machines Corporation | Voltage divider for integrated circuits |
US20060170487A1 (en) * | 2005-01-31 | 2006-08-03 | International Business Machines Corporation | A voltage reference circuit for ultra-thin oxide technology and low voltage applications |
US7579897B2 (en) * | 2006-04-28 | 2009-08-25 | International Business Machines Corporation | Design structure for implementing oxide leakage based voltage divider network for integrated circuit devices |
US20090237312A1 (en) * | 2008-03-24 | 2009-09-24 | Schober Edward A | Antenna |
US7994729B2 (en) * | 2008-07-21 | 2011-08-09 | Simplexgrinnell Lp | Optical element driving circuit |
FR2940457B1 (fr) | 2008-12-18 | 2011-02-18 | Schneider Electric Ind Sas | Dispositif diviseur capacitif, capteur de tension, module de declencheur et appareil de protection electrique pourvus d'un tel dispositif |
US8513723B2 (en) * | 2010-01-19 | 2013-08-20 | International Business Machines Corporation | Method and structure for forming high performance MOS capacitor along with fully depleted semiconductor on insulator devices on the same chip |
US9081038B2 (en) * | 2011-10-04 | 2015-07-14 | Analog Devices, Inc. | Voltage monitor |
CN102809677B (zh) * | 2012-07-17 | 2015-02-04 | 西北核技术研究所 | 一种标定薄膜电容分压器的方法 |
WO2020198707A1 (en) * | 2019-03-27 | 2020-10-01 | Prippell Technologies, Llc | Polyphase switching regulator |
EP4142133A1 (de) | 2021-08-30 | 2023-03-01 | Murata Manufacturing Co., Ltd. | Elektrische vorrichtung mit einem wechselspannungsteiler und in integrierten komponenten angeordneten kondensatoren |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL158054B (nl) * | 1968-11-20 | 1978-09-15 | Auco Nv | Van twee aansluitorganen voorziene hulpinrichting voor het ontsteken van een gasontladingsbuis. |
DE2215928B2 (de) * | 1972-03-29 | 1975-10-30 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Spannungs-Meßeinrichtung für eine vollisolierte, metallgekapselte Hochspannungs-Schaltanlage |
FR2493527A1 (fr) * | 1980-11-06 | 1982-05-07 | Alsthom Atlantique | Dispositif pour l'elimination rapide des charges piegees dans un pont diviseur capacitif utilise pour la surveillance des tensions alternatives elevees |
JPS60179998A (ja) | 1984-02-28 | 1985-09-13 | Fujitsu Ltd | 電圧検出回路 |
US4709320A (en) * | 1986-10-23 | 1987-11-24 | Zenith Electronics Corporation | Low voltage shutdown circuit |
JPH02142319A (ja) | 1988-11-21 | 1990-05-31 | Toshiba Corp | 変圧器用接地線の断線検出装置 |
EP0631144A1 (de) | 1993-06-24 | 1994-12-28 | Koninklijke Philips Electronics N.V. | Hochspannungdifferentialsensor mit kapazitiver Abschwächung |
KR950010763B1 (ko) * | 1993-12-03 | 1995-09-22 | 재단법인한국전자통신연구소 | 커패시터형 전압분배기 회로 |
EP0661749A1 (de) | 1993-12-28 | 1995-07-05 | Seiko Instruments Inc. | Integrierte Halbleiterschaltung für einen Spannungshöher und elektronische Anordnung für eine solche integrierte Halbleiterschaltung |
US5910738A (en) * | 1995-04-07 | 1999-06-08 | Kabushiki Kaisha Toshiba | Driving circuit for driving a semiconductor device at high speed and method of operating the same |
JP3311205B2 (ja) * | 1995-07-13 | 2002-08-05 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
US5796296A (en) * | 1996-10-07 | 1998-08-18 | Texas Instruments Incorporated | Combined resistance-capacitance ladder voltage divider circuit |
US5952695A (en) * | 1997-03-05 | 1999-09-14 | International Business Machines Corporation | Silicon-on-insulator and CMOS-on-SOI double film structures |
-
1999
- 1999-12-28 US US09/473,530 patent/US6518814B1/en not_active Expired - Fee Related
-
2000
- 2000-12-11 JP JP2001548442A patent/JP2003518774A/ja active Pending
- 2000-12-11 KR KR1020017010945A patent/KR20010102412A/ko not_active Application Discontinuation
- 2000-12-11 DE DE60012896T patent/DE60012896T2/de not_active Expired - Fee Related
- 2000-12-11 EP EP00983282A patent/EP1159759B1/de not_active Expired - Lifetime
- 2000-12-11 WO PCT/EP2000/012538 patent/WO2001048824A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP1159759B1 (de) | 2004-08-11 |
US6518814B1 (en) | 2003-02-11 |
DE60012896T2 (de) | 2005-07-28 |
KR20010102412A (ko) | 2001-11-15 |
EP1159759A1 (de) | 2001-12-05 |
JP2003518774A (ja) | 2003-06-10 |
WO2001048824A1 (en) | 2001-07-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |