NO20004348D0 - Ultraliten kondensatorgruppe - Google Patents

Ultraliten kondensatorgruppe

Info

Publication number
NO20004348D0
NO20004348D0 NO20004348A NO20004348A NO20004348D0 NO 20004348 D0 NO20004348 D0 NO 20004348D0 NO 20004348 A NO20004348 A NO 20004348A NO 20004348 A NO20004348 A NO 20004348A NO 20004348 D0 NO20004348 D0 NO 20004348D0
Authority
NO
Norway
Prior art keywords
ultralite
capacitor group
capacitor
group
ultralite capacitor
Prior art date
Application number
NO20004348A
Other languages
English (en)
Other versions
NO20004348L (no
Inventor
Donghang Liu
Original Assignee
Avx Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avx Corp filed Critical Avx Corp
Publication of NO20004348D0 publication Critical patent/NO20004348D0/no
Publication of NO20004348L publication Critical patent/NO20004348L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49099—Coating resistive material on a base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
NO20004348A 1998-03-04 2000-09-01 Ultraliten kondensatorgruppe NO20004348L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/034,754 US6324048B1 (en) 1998-03-04 1998-03-04 Ultra-small capacitor array
PCT/US1998/022778 WO1999045572A2 (en) 1998-03-04 1998-10-27 Ultra-small capacitor array

Publications (2)

Publication Number Publication Date
NO20004348D0 true NO20004348D0 (no) 2000-09-01
NO20004348L NO20004348L (no) 2000-10-19

Family

ID=21878383

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20004348A NO20004348L (no) 1998-03-04 2000-09-01 Ultraliten kondensatorgruppe

Country Status (8)

Country Link
US (3) US6324048B1 (no)
EP (1) EP1060503A2 (no)
JP (1) JP2002506283A (no)
KR (1) KR20010041574A (no)
CN (1) CN1301392A (no)
AU (1) AU1202699A (no)
NO (1) NO20004348L (no)
WO (1) WO1999045572A2 (no)

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US7321485B2 (en) 1997-04-08 2008-01-22 X2Y Attenuators, Llc Arrangement for energy conditioning
US7336468B2 (en) 1997-04-08 2008-02-26 X2Y Attenuators, Llc Arrangement for energy conditioning
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
JP3386029B2 (ja) * 2000-02-09 2003-03-10 日本電気株式会社 フリップチップ型半導体装置及びその製造方法
US6515842B1 (en) 2000-03-30 2003-02-04 Avx Corporation Multiple array and method of making a multiple array
US20020171530A1 (en) * 2000-03-30 2002-11-21 Victor Company Of Japan, Limited Production method of thin film passive element formed on printed circuit board and thin film passive element produced by the method
JP2002252143A (ja) * 2000-12-21 2002-09-06 Alps Electric Co Ltd 温度補償用薄膜コンデンサ及び電子機器
CN100345228C (zh) * 2001-05-10 2007-10-24 微涂技术股份有限公司 具有改进电极的电容器
US7016175B2 (en) * 2002-10-03 2006-03-21 Avx Corporation Window via capacitor
US7573698B2 (en) * 2002-10-03 2009-08-11 Avx Corporation Window via capacitors
US6819543B2 (en) * 2002-12-31 2004-11-16 Intel Corporation Multilayer capacitor with multiple plates per layer
US6785118B1 (en) 2003-03-31 2004-08-31 Intel Corporation Multiple electrode capacitor
US6950300B2 (en) * 2003-05-06 2005-09-27 Marvell World Trade Ltd. Ultra low inductance multi layer ceramic capacitor
JP4093188B2 (ja) * 2003-05-27 2008-06-04 株式会社村田製作所 積層セラミック電子部品とその実装構造および実装方法
US7177135B2 (en) * 2003-09-23 2007-02-13 Samsung Electronics Co., Ltd. On-chip bypass capacitor and method of manufacturing the same
US7675729B2 (en) 2003-12-22 2010-03-09 X2Y Attenuators, Llc Internally shielded energy conditioner
KR100980056B1 (ko) * 2003-12-24 2010-09-03 주식회사 하이닉스반도체 비대칭 커패시터 패턴 어레이
TWI251706B (en) * 2003-12-26 2006-03-21 Display Optronics Corp M Storage capacitor having light scattering function and manufacturing process of the same
JP2008535207A (ja) 2005-03-01 2008-08-28 エックストゥーワイ アテニュエイターズ，エルエルシー 共平面導体を有する調整器
US7817397B2 (en) 2005-03-01 2010-10-19 X2Y Attenuators, Llc Energy conditioner with tied through electrodes
US20060202250A1 (en) * 2005-03-10 2006-09-14 Thomas Hecht Storage capacitor, array of storage capacitors and memory cell array
US7548407B2 (en) * 2005-09-12 2009-06-16 Qualcomm Incorporated Capacitor structure
KR101390426B1 (ko) 2006-03-07 2014-04-30 엑스2와이 어테뉴에이터스, 엘.엘.씨 에너지 컨디셔너 구조물들
US7573112B2 (en) * 2006-04-14 2009-08-11 Allegro Microsystems, Inc. Methods and apparatus for sensor having capacitor on chip
US7687882B2 (en) * 2006-04-14 2010-03-30 Allegro Microsystems, Inc. Methods and apparatus for integrated circuit having multiple dies with at least one on chip capacitor
US20080013298A1 (en) 2006-07-14 2008-01-17 Nirmal Sharma Methods and apparatus for passive attachment of components for integrated circuits
US7280343B1 (en) 2006-10-31 2007-10-09 Avx Corporation Low profile electrolytic capacitor assembly
US8093670B2 (en) 2008-07-24 2012-01-10 Allegro Microsystems, Inc. Methods and apparatus for integrated circuit having on chip capacitor with eddy current reductions
US9450556B2 (en) * 2009-10-16 2016-09-20 Avx Corporation Thin film surface mount components
US8699204B2 (en) * 2010-02-23 2014-04-15 Avx Corporation Element array and footprint layout for element array
US8629539B2 (en) 2012-01-16 2014-01-14 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having non-conductive die paddle
US9666788B2 (en) 2012-03-20 2017-05-30 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US9812588B2 (en) 2012-03-20 2017-11-07 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US10234513B2 (en) 2012-03-20 2019-03-19 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US9494660B2 (en) 2012-03-20 2016-11-15 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US10319529B2 (en) 2013-02-14 2019-06-11 Kemet Electronics Corporation One-sided capacitor foils and methods of making one-sided capacitor foils
US9411025B2 (en) 2013-04-26 2016-08-09 Allegro Microsystems, Llc Integrated circuit package having a split lead frame and a magnet
US10411498B2 (en) 2015-10-21 2019-09-10 Allegro Microsystems, Llc Apparatus and methods for extending sensor integrated circuit operation through a power disturbance
US9991331B2 (en) * 2016-09-26 2018-06-05 Micron Technology, Inc. Apparatuses and methods for semiconductor circuit layout
US10978897B2 (en) 2018-04-02 2021-04-13 Allegro Microsystems, Llc Systems and methods for suppressing undesirable voltage supply artifacts
US10991644B2 (en) 2019-08-22 2021-04-27 Allegro Microsystems, Llc Integrated circuit package having a low profile
CN115485839A (zh) * 2020-05-01 2022-12-16 株式会社村田制作所 半导体装置以及模块

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Also Published As

Publication number Publication date
KR20010041574A (ko) 2001-05-25
US6519132B1 (en) 2003-02-11
AU1202699A (en) 1999-09-20
CN1301392A (zh) 2001-06-27
WO1999045572A2 (en) 1999-09-10
NO20004348L (no) 2000-10-19
EP1060503A2 (en) 2000-12-20
US6832420B2 (en) 2004-12-21
JP2002506283A (ja) 2002-02-26
US20020126438A1 (en) 2002-09-12
WO1999045572A3 (en) 2000-06-22
US6324048B1 (en) 2001-11-27

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