DE60003989D1 - Seitenprogrammiermodus für EEPROM und zugehörige Schaltung - Google Patents

Seitenprogrammiermodus für EEPROM und zugehörige Schaltung

Info

Publication number
DE60003989D1
DE60003989D1 DE60003989T DE60003989T DE60003989D1 DE 60003989 D1 DE60003989 D1 DE 60003989D1 DE 60003989 T DE60003989 T DE 60003989T DE 60003989 T DE60003989 T DE 60003989T DE 60003989 D1 DE60003989 D1 DE 60003989D1
Authority
DE
Germany
Prior art keywords
eeprom
programming mode
associated circuit
page programming
page
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60003989T
Other languages
English (en)
Other versions
DE60003989T2 (de
Inventor
David Naura
Sebastien Zink
Bertrand Bertrand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Publication of DE60003989D1 publication Critical patent/DE60003989D1/de
Application granted granted Critical
Publication of DE60003989T2 publication Critical patent/DE60003989T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
DE60003989T 1999-09-16 2000-09-15 Seitenprogrammiermodus für EEPROM und zugehörige Schaltung Expired - Lifetime DE60003989T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9911601A FR2798767B1 (fr) 1999-09-16 1999-09-16 Procede d'ecriture en mode page d'une memoire non volatile electriquement programmable/effacable et architecture correspondante
FR9911601 1999-09-16

Publications (2)

Publication Number Publication Date
DE60003989D1 true DE60003989D1 (de) 2003-08-28
DE60003989T2 DE60003989T2 (de) 2004-05-06

Family

ID=9549928

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60003989T Expired - Lifetime DE60003989T2 (de) 1999-09-16 2000-09-15 Seitenprogrammiermodus für EEPROM und zugehörige Schaltung

Country Status (5)

Country Link
US (1) US6504791B1 (de)
EP (1) EP1085520B1 (de)
JP (1) JP2001118394A (de)
DE (1) DE60003989T2 (de)
FR (1) FR2798767B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7606111B2 (en) * 2007-04-26 2009-10-20 Super Talent Electronics, Inc. Synchronous page-mode phase-change memory with ECC and RAM cache
KR100921683B1 (ko) 2007-12-17 2009-10-15 한국전자통신연구원 키-값 데이터 모델을 위한 메모리 페이지 내 데이터저장방법
JP6192256B2 (ja) * 2010-10-12 2017-09-06 サムスン セミコンダクター，インコーポレーテッド 疑似ページモードのメモリアーキテクチャおよび方法
TWI609376B (zh) * 2016-11-16 2017-12-21 旺宏電子股份有限公司 記憶體陣列的操作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63251999A (ja) * 1987-04-08 1988-10-19 Mitsubishi Electric Corp 半導体記憶装置
KR940006611B1 (ko) * 1990-08-20 1994-07-23 삼성전자 주식회사 전기적으로 소거 및 프로그램이 가능한 반도체 메모리장치의 자동 소거 최적화회로 및 방법
US5363330A (en) * 1991-01-28 1994-11-08 Mitsubishi Denki Kabushiki Kaisha Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
US5606532A (en) * 1995-03-17 1997-02-25 Atmel Corporation EEPROM array with flash-like core
JP3807744B2 (ja) * 1995-06-07 2006-08-09 マクロニクス インターナショナル カンパニイ リミテッド 可変プログラムパルス高及びパルス幅によるページモードフラッシュメモリ用自動プログラミングアルゴリズム
US5724303A (en) * 1996-02-15 1998-03-03 Nexcom Technology, Inc. Non-volatile programmable memory having an SRAM capability

Also Published As

Publication number Publication date
FR2798767A1 (fr) 2001-03-23
DE60003989T2 (de) 2004-05-06
FR2798767B1 (fr) 2001-12-14
JP2001118394A (ja) 2001-04-27
EP1085520B1 (de) 2003-07-23
US6504791B1 (en) 2003-01-07
EP1085520A1 (de) 2001-03-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition