DE60002367D1 - Fotokoppler - Google Patents

Fotokoppler

Info

Publication number
DE60002367D1
DE60002367D1 DE60002367T DE60002367T DE60002367D1 DE 60002367 D1 DE60002367 D1 DE 60002367D1 DE 60002367 T DE60002367 T DE 60002367T DE 60002367 T DE60002367 T DE 60002367T DE 60002367 D1 DE60002367 D1 DE 60002367D1
Authority
DE
Germany
Prior art keywords
photocoupler
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60002367T
Other languages
English (en)
Other versions
DE60002367T2 (de
Inventor
Yasushi Hasegawa
Hideya Takakura
Kazuo Kusuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP00706799A external-priority patent/JP3478379B2/ja
Priority claimed from JP04378599A external-priority patent/JP3491816B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60002367D1 publication Critical patent/DE60002367D1/de
Publication of DE60002367T2 publication Critical patent/DE60002367T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
DE60002367T 1999-01-13 2000-01-11 Fotokoppler Expired - Fee Related DE60002367T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP706799 1999-01-13
JP00706799A JP3478379B2 (ja) 1999-01-13 1999-01-13 光結合素子の製造方法
JP04378599A JP3491816B2 (ja) 1999-02-22 1999-02-22 光結合装置用リードフレーム及び光結合装置
JP4378599 1999-02-22

Publications (2)

Publication Number Publication Date
DE60002367D1 true DE60002367D1 (de) 2003-06-05
DE60002367T2 DE60002367T2 (de) 2004-02-19

Family

ID=26341315

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60002367T Expired - Fee Related DE60002367T2 (de) 1999-01-13 2000-01-11 Fotokoppler

Country Status (4)

Country Link
US (1) US6507035B1 (de)
EP (1) EP1020933B1 (de)
DE (1) DE60002367T2 (de)
TW (1) TW456055B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8093823B1 (en) * 2000-02-11 2012-01-10 Altair Engineering, Inc. Light sources incorporating light emitting diodes
US7049761B2 (en) 2000-02-11 2006-05-23 Altair Engineering, Inc. Light tube and power supply circuit
JP4801243B2 (ja) * 2000-08-08 2011-10-26 ルネサスエレクトロニクス株式会社 リードフレームおよびそれを用いて製造した半導体装置並びにその製造方法
JP3938479B2 (ja) * 2001-07-18 2007-06-27 シャープ株式会社 光結合素子の生産システム
JP3939554B2 (ja) * 2002-01-15 2007-07-04 シャープ株式会社 半導体用リードフレーム
JP2005294494A (ja) * 2004-03-31 2005-10-20 Toshiba Corp 光半導体装置及びその製造方法
WO2007071210A1 (de) * 2005-12-19 2007-06-28 Siemens Aktiengesellschaft Anordnung zur signalübertragung
JP2014041865A (ja) * 2012-08-21 2014-03-06 Toshiba Corp 半導体装置
JP6325471B2 (ja) 2015-03-02 2018-05-16 株式会社東芝 光結合装置および絶縁装置
CN112271163B (zh) * 2020-10-23 2023-09-15 中国电子科技集团公司第四十四研究所 高精度线性光电耦合器结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0638514B2 (ja) * 1985-11-21 1994-05-18 日本電気株式会社 フオトインタラプタ
JPS6373678A (ja) * 1986-09-17 1988-04-04 Mitsubishi Electric Corp 半導体装置
JPH01161780A (ja) * 1987-12-18 1989-06-26 Toshiba Corp 樹脂封止されたフォトカプラ
JPH065905A (ja) * 1992-06-22 1994-01-14 Sharp Corp 光学装置用リードフレームおよびこれを使用した光学装置の製造方法
JPH0715030A (ja) * 1993-06-07 1995-01-17 Motorola Inc 線形集積光結合素子およびその製造方法
JPH08222757A (ja) * 1995-02-14 1996-08-30 Sharp Corp 光結合素子
US5753929A (en) * 1996-08-28 1998-05-19 Motorola, Inc. Multi-directional optocoupler and method of manufacture
JP3420452B2 (ja) * 1997-01-17 2003-06-23 シャープ株式会社 光結合装置

Also Published As

Publication number Publication date
EP1020933B1 (de) 2003-05-02
TW456055B (en) 2001-09-21
EP1020933A1 (de) 2000-07-19
DE60002367T2 (de) 2004-02-19
US6507035B1 (en) 2003-01-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee