DE60000851T2 - Halbleiterlaser mit parametrischer Lichterzeugung - Google Patents
Halbleiterlaser mit parametrischer LichterzeugungInfo
- Publication number
- DE60000851T2 DE60000851T2 DE60000851T DE60000851T DE60000851T2 DE 60000851 T2 DE60000851 T2 DE 60000851T2 DE 60000851 T DE60000851 T DE 60000851T DE 60000851 T DE60000851 T DE 60000851T DE 60000851 T2 DE60000851 T2 DE 60000851T2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- light generation
- parametric light
- parametric
- generation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
- G02F1/395—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves in optical waveguides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
- H01S5/0605—Self doubling, e.g. lasing and frequency doubling by the same active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9912303A FR2799314B1 (fr) | 1999-10-01 | 1999-10-01 | Laser a generations parametriques |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60000851D1 DE60000851D1 (de) | 2003-01-09 |
DE60000851T2 true DE60000851T2 (de) | 2003-09-04 |
Family
ID=9550504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60000851T Expired - Fee Related DE60000851T2 (de) | 1999-10-01 | 2000-09-29 | Halbleiterlaser mit parametrischer Lichterzeugung |
Country Status (5)
Country | Link |
---|---|
US (1) | US6631151B1 (de) |
EP (1) | EP1089405B1 (de) |
JP (1) | JP2001159766A (de) |
DE (1) | DE60000851T2 (de) |
FR (1) | FR2799314B1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3968086A1 (de) | 2020-09-15 | 2022-03-16 | Shan Dong University | Parametrisches lichterzeugungsverfahren und dessen anwendung |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060222180A1 (en) * | 2002-10-15 | 2006-10-05 | Elliott Brig B | Chip-scale transmitter for quantum cryptography |
US20070130455A1 (en) * | 2005-12-06 | 2007-06-07 | Elliott Brig B | Series encryption in a quantum cryptographic system |
US20070133798A1 (en) * | 2005-12-14 | 2007-06-14 | Elliott Brig B | Quantum cryptography on a multi-drop optical network |
US8082443B2 (en) * | 2006-01-09 | 2011-12-20 | Bbnt Solutions Llc. | Pedigrees for quantum cryptography |
FR2934712B1 (fr) * | 2008-08-01 | 2010-08-27 | Thales Sa | Procede de fabrication d'un dispositif optique d'analyse comportant un laser a cascades quantiques et un detecteur quantique. |
FR3005800B1 (fr) * | 2013-05-16 | 2015-05-22 | Commissariat Energie Atomique | Source optique parametrique sur puce pompee electriquement |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2546127B2 (ja) * | 1993-04-06 | 1996-10-23 | 日本電気株式会社 | 半導体レーザ |
FR2734097B1 (fr) | 1995-05-12 | 1997-06-06 | Thomson Csf | Laser a semiconducteurs |
FR2736168B1 (fr) | 1995-06-30 | 1997-07-25 | Thomson Csf | Convertisseur de frequence comprenant un guide semiconducteur a heterostructure |
FR2757684B1 (fr) | 1996-12-20 | 1999-03-26 | Thomson Csf | Detecteur infrarouge a structure quantique, non refroidie |
FR2760574B1 (fr) | 1997-03-04 | 1999-05-28 | Thomson Csf | Laser unipolaire multi-longueurs d'ondes |
JPH11243256A (ja) * | 1997-12-03 | 1999-09-07 | Canon Inc | 分布帰還形半導体レーザとその駆動方法 |
-
1999
- 1999-10-01 FR FR9912303A patent/FR2799314B1/fr not_active Expired - Fee Related
-
2000
- 2000-09-29 EP EP00402695A patent/EP1089405B1/de not_active Expired - Lifetime
- 2000-09-29 DE DE60000851T patent/DE60000851T2/de not_active Expired - Fee Related
- 2000-09-29 US US09/672,314 patent/US6631151B1/en not_active Expired - Fee Related
- 2000-10-02 JP JP2000302012A patent/JP2001159766A/ja not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3968086A1 (de) | 2020-09-15 | 2022-03-16 | Shan Dong University | Parametrisches lichterzeugungsverfahren und dessen anwendung |
Also Published As
Publication number | Publication date |
---|---|
JP2001159766A (ja) | 2001-06-12 |
US6631151B1 (en) | 2003-10-07 |
EP1089405A1 (de) | 2001-04-04 |
FR2799314A1 (fr) | 2001-04-06 |
EP1089405B1 (de) | 2002-11-27 |
FR2799314B1 (fr) | 2002-10-25 |
DE60000851D1 (de) | 2003-01-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |